DECOMPOSITION OF SiH4 ON THE SA TYPE STEPPED Si(100) SURFACE
2002 ◽
Vol 09
(03n04)
◽
pp. 1401-1407
◽
Keyword(s):
The density functional theory method is used to explore the mechanism of dissociative adsorption of silane (SiH4) on the SA type stepped Si(100) surface. Two reaction paths are described that produce silyl (SiH3) and hydrogen atom fragments adsorbed on the dimer bonds present on each terrace. It has been found that the initial stage of the dissociation of SiH4 on the SA type stepped Si(100) surface shows similarity to the dissociation of SiH4 on the flat Si(100) surface; SiH3 and hydrogen fragments bond to the Si dimer atoms by following the first reaction path.
2002 ◽
Vol 16
(16)
◽
pp. 2191-2200
2013 ◽
Vol 3
(2)
◽
pp. 137-150
◽
2013 ◽
Vol 58
(12)
◽
pp. 1506-1510
◽
2018 ◽
Vol 434
◽
pp. 012026
2014 ◽
Vol 59
(11)
◽
pp. 1283-1289
◽
2013 ◽
Vol 51
(7)
◽
pp. 461-466
◽
2020 ◽
Vol 1462
◽
pp. 012045
2018 ◽
Vol 3
(2)
◽
pp. 179-184
2008 ◽
Vol 82
(11)
◽
pp. 1885-1895
◽