THE STUDY ON THE ELECTRIC FIELD EFFECT IN THE La0.8Ca0.2MnO3/PbZr0.2Ti0.8O3/Si HETEROSTRUCTURE

A detailed quantitative investigation of the current–voltage (I–V) relationship under the low and the high electric field in the La 0.8 Ca 0.2 MnO 3/ PbZr 0.2 Ti 0.8 O 3/ Si heterostructure over a wide range of temperature was performed. The effective mobility and carrier concentration were then calculated through the electric field effect theory. The differential mobility can be modulated and enhanced significantly by the gate voltage in the vicinity of the metal–insulator-transition temperature. The carrier concentration is proportional to the applied gate voltage. At the room temperature the carrier concentration is found to be 2.5 × 10-9 under 10 V bias and remains almost unchanged at different temperatures.