INFLUENCE OF POST ANNEALING ON SOL–GEL DEPOSITED ZnO THIN FILMS

2014 ◽  
Vol 21 (04) ◽  
pp. 1450046 ◽  
Author(s):  
HEMALATA BHADANE ◽  
EDMUND SAMUEL ◽  
DINESH KUMAR GAUTAM
Keyword(s):  
Thin Films ◽  
Annealing Temperature ◽  
Sol Gel ◽  
Visible Region ◽  
Average Crystallite Size ◽  
Zno Thin Films ◽  
Nanocrystalline Films ◽  
Post Annealing ◽  
Deposited Films ◽  
Lower Resistivity

The effect of annealing temperature on sol–gel deposited ZnO thin films have been studied. The average crystallite size determined from XRD shows that the deposited films are nanocrystalline. FTIR confirms deposition of ZnO thin films. The transmittance of annealed ZnO thin films is greater than 80% in visible region with bandgap ranging from 3.25–3.19 eV. The films annealed at 450°C temperature shows lower resistivity value of 527.241 Ωm. The deposited nanocrystalline films are suitable for biosensing applications due to its higher surface area.

Effect of annealing temperature on the structural and optical properties of ZnO thin films prepared by sol–gel method

Ionics ◽  
2010 ◽  
Vol 16 (9) ◽  
pp. 815-820 ◽  
Author(s):  
Yidong Zhang ◽  
Wenjun Fa ◽  
Fengling Yang ◽  
Zhi Zheng ◽  
Pingyu Zhang
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Annealing Temperature ◽  
Sol Gel ◽  
Zno Thin Films ◽  
Structural And Optical Properties ◽  
Gel Method ◽  
Sol Gel Method

Photocatalytic Properties of ZnO and Ag Doped ZnO Thin Films

2014 ◽  
Vol 685 ◽  
pp. 3-6
Author(s):  
Ying Lian Wang ◽  
Jun Yao Ye
Keyword(s):  
Thin Films ◽  
Annealing Temperature ◽  
Sol Gel ◽  
Structural Features ◽  
Photocatalytic Properties ◽  
Zno Thin Films ◽  
Molar Ratio ◽  
Zno Films ◽  
Doped Zno ◽  
Excellent Adhesion

Pure ZnO thin films and Ag doped ZnO thin films were prepared on quartz substrates by sol-gel process. Structural features and UV absorption spectrum have been studied by XRD and UV-Vis-Nir scanning spectrophotometer. Taking phenol as pollutants, further study of the effect of different annealing temperature and Ag dopant amount of ZnO films on photocatalytic properties was carried out. The results showed that, the optimal annealing temperature on photocatalytic degradation of phenol in this experiment was 300 °C, the best molar ratio of ZnO and Ag was 30:1, which was better than pure ZnO film greatly. Excellent adhesion, recyclable and efficient degradation Ag doped ZnO thin films were found in this experiment.

Influence of annealing temperature on the structural, morphological and optical properties of Cu doped ZnO thin films deposited by the sol–gel method

2014 ◽  
Vol 75 ◽  
pp. 47-53 ◽  
Author(s):  
Tarek Saidani ◽  
Mourad Zaabat ◽  
Mohammed Salah Aida ◽  
Ahlem Benaboud ◽  
Sarah Benzitouni ◽  
...  
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Annealing Temperature ◽  
Sol Gel ◽  
Zno Thin Films ◽  
Gel Method ◽  
Sol Gel Method ◽  
Doped Zno

scholarly journals Influence of annealing temperature on the structural, topographical and optical properties of sol–gel derived ZnO thin films

2011 ◽  
Vol 65 (17-18) ◽  
pp. 2572-2574 ◽  
Author(s):  
Joydip Sengupta ◽  
R.K. Sahoo ◽  
K.K. Bardhan ◽  
C.D. Mukherjee
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Annealing Temperature ◽  
Sol Gel ◽  
Zno Thin Films

Influence of Post-annealing Temperature on the Properties of Ti-Doped In2O3 Transparent Conductive Films by DC Ratio-frequency Sputtering

2011 ◽  
Vol 1352 ◽  
Author(s):  
Lei Li ◽  
Chen Chen ◽  
Chengjun Dong ◽  
JiaJia Cao ◽  
Jingmin Dang ◽  
...  
Keyword(s):  
Annealing Temperature ◽  
Optical Transmittance ◽  
Conductive Films ◽  
Post Annealing ◽  
Average Optical Transmittance ◽  
Different Temperatures ◽  
Quartz Substrates ◽  
Post Annealing Temperature ◽  
Deposited Films ◽  
Lower Resistivity

ABSTRACTIn this paper, titanium doped (2 wt. %) indium oxide (TIO) thin films deposited on quartz substrates by DC sputtering were presented. Dealt with different temperatures from 420°C to 620°C of post-annealing in vacuum for 40 minuets, the samples display different optical and electric properties. The deposited films exhibited polycrystalline in the preferred (222) and (440) orientation, with higher mobility (up to 48.6 cm2/VS) and lower resistivity (1.26 ×10-4Ω·cm) at the post-annealing temperature of 520°C. The average optical transmittance of the films is over 92% in a wavelength range from 300 to 1100 nm and the transmittance has only around 1.8% change with different post-annealing temperatures.

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