IN SITU STUDIES WITH LOW-ENERGY ELECTRON MICROSCOPY

1995 ◽  
Vol 02 (01) ◽  
pp. 103-107
Author(s):  
RUUD M. TROMP

This paper gives a brief review of low-energy electron microscopy (LEEM) as used for in situ studies of surface dynamical processes. The capabilities of LEEM are illustrated with two examples. One is a kinetic instability observed during growth of the first layer of CaF 2 on Si (111). The second concerns the nucleation of misfit dislocations during the growth of thicker, epitaxial CaF 2 films on Si (111), as the critical thickness is exceeded. Both examples highlight the importance of real time, in situ observations of surface dynamical processes.

2000 ◽  
Vol 318 (6) ◽  
pp. 549-554 ◽  
Author(s):  
Th. Schmidt ◽  
A. Schaak ◽  
S. Günther ◽  
B. Ressel ◽  
E. Bauer ◽  
...  

1998 ◽  
Vol 189-190 ◽  
pp. 310-316 ◽  
Author(s):  
A Pavlovska ◽  
E Bauer ◽  
V.M Torres ◽  
J.L Edwards ◽  
R.B Doak ◽  
...  

1998 ◽  
Vol 05 (06) ◽  
pp. 1189-1197 ◽  
Author(s):  
R. M. Tromp ◽  
M. Mankos ◽  
M. C. Reuter ◽  
A. W. Ellis ◽  
M. Copel

Low energy electron microscopy (LEEM) has developed into one of the premier techniques for in situ studies of surface dynamical processes, such as epitaxial growth, phase transitions, chemisorption and strain relaxation phenomena. Over the last three years we have designed and constructed a new LEEM instrument, aimed at improved resolution, improved diffraction capabilities and greater ease of operation compared to present instruments.


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