A New Low Energy Electron Microscope

1998 ◽  
Vol 05 (06) ◽  
pp. 1189-1197 ◽  
Author(s):  
R. M. Tromp ◽  
M. Mankos ◽  
M. C. Reuter ◽  
A. W. Ellis ◽  
M. Copel
Keyword(s):  
Electron Microscopy ◽  
Phase Transitions ◽  
Electron Microscope ◽  
Epitaxial Growth ◽  
Strain Relaxation ◽  
Low Energy ◽  
Energy Electron ◽  
Relaxation Phenomena ◽  
Low Energy Electron

Low energy electron microscopy (LEEM) has developed into one of the premier techniques for in situ studies of surface dynamical processes, such as epitaxial growth, phase transitions, chemisorption and strain relaxation phenomena. Over the last three years we have designed and constructed a new LEEM instrument, aimed at improved resolution, improved diffraction capabilities and greater ease of operation compared to present instruments.

In situ studies of epitaxial growth in the low energy electron microscope

1989 ◽  
Vol 213 (2-3) ◽  
pp. 381-392 ◽  
Author(s):  
M. Mundschau ◽  
E. Bauer ◽  
W. Telieps ◽  
W. Świȩch
Keyword(s):  
Electron Microscope ◽  
Epitaxial Growth ◽  
Low Energy ◽  
Energy Electron ◽  
In Situ Studies ◽  
Low Energy Electron

Low Energy Electron Microscopy of Surface Processes on Clean Si(111) and Si (100)

1989 ◽  
Vol 159 ◽  
Author(s):  
E. Bauer ◽  
M. Mundschau ◽  
W. Swiech ◽  
W. Telieps
Keyword(s):  
Electron Microscopy ◽  
Phase Transitions ◽  
Crystal Growth ◽  
Surface Defects ◽  
Low Energy ◽  
Energy Electron ◽  
Surface Processes ◽  
Surface Phase ◽  
Surface Phase Transitions ◽  
Low Energy Electron

ABSTRACTLow energy electron microscopy (LEEM) is briefly introduced and its application to the study of surface defects, surface phase transitions on Si(111), crystal growth and sublimation on Si(100) is illustrated.

Strain Relaxation in SiGe Thin Films Studied by Low-Energy Electron Microscopy

2001 ◽  
Vol 696 ◽  
Author(s):  
A.R. Woll ◽  
P. Moran ◽  
E.M. Rehder ◽  
B. Yang ◽  
T.F. Kuech ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Strain Relaxation ◽  
Surface Cleaning ◽  
Low Energy ◽  
Silicon On Insulator ◽  
Surface Strain ◽  
Energy Electron ◽  
High Temperature Annealing ◽  
Low Energy Electron ◽  
Dislocation Multiplication

AbstractWe demonstrate the use of low-energy electron microscopy (LEEM) as a tool for studying dis-location formation in low-Ge-content SiGe films on Si(001) and silicon-on-insulator. Compared to TEM, sample preparation for LEEM consists only of conventional surface cleaning. Yet, because of its sensitivity to local variations in surface strain on Si(001), LEEM can detect dislocations at the earliest stages of strain relaxation. In identically prepared SiGe films, the typical dislocation extends over the entire viewable region of several hundred microns in SiGe/Si, but is less than 100 microns in SiGe/SOI. In addition, dislocation cross-slip and threading segments are common in SiGe/SOI, but virtually non-existent in SiGe/Si. We have also observed dislocation formation in real-time during high temperature annealing. Preliminary results appear to demonstrate dislocation multiplication and blocking at a perpendicular glide plane. The applicability of LEEM to strain relaxation in other Si-based systems will be discussed.

scholarly journals Addendum. Laplacian image contrast in mirror electron microscopy

2011 ◽  
Vol 467 (2135) ◽  
pp. 3332-3341 ◽  
Author(s):  
S. M. Kennedy ◽  
C. X. Zheng ◽  
W. X. Tang ◽  
D. M. Paganin ◽  
D. E. Jesson
Keyword(s):  
Electron Microscopy ◽  
Electron Microscope ◽  
Image Contrast ◽  
Low Energy ◽  
Energy Electron ◽  
Objective Lens ◽  
Imaging Geometry ◽  
Low Energy Electron ◽  
Collimated Beam

We extend the theory of Laplacian image contrast in mirror electron microscopy (MEM) to the case where the sample is illuminated by a parallel, collimated beam. This popular imaging geometry corresponds to a modern low energy electron microscope equipped with a magnetic objective lens. We show that within the constraints of the relevant approximations; the results for parallel illumination differ only negligibly from diverging MEM specimen illumination conditions.

IN SITU STUDIES WITH LOW-ENERGY ELECTRON MICROSCOPY

1995 ◽  
Vol 02 (01) ◽  
pp. 103-107
Author(s):  
RUUD M. TROMP
Keyword(s):  
Electron Microscopy ◽  
Low Energy ◽  
Energy Electron ◽  
Misfit Dislocations ◽  
Dynamical Processes ◽  
In Situ Studies ◽  
Kinetic Instability ◽  
In Situ Observations ◽  
Low Energy Electron

This paper gives a brief review of low-energy electron microscopy (LEEM) as used for in situ studies of surface dynamical processes. The capabilities of LEEM are illustrated with two examples. One is a kinetic instability observed during growth of the first layer of CaF 2 on Si (111). The second concerns the nucleation of misfit dislocations during the growth of thicker, epitaxial CaF 2 films on Si (111), as the critical thickness is exceeded. Both examples highlight the importance of real time, in situ observations of surface dynamical processes.

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