STIMULATED BRILLOUIN SCATTERING IN n-TYPE III–V PIEZOELECTRIC SEMICONDUCTORS

2001 ◽  
Vol 10 (02) ◽  
pp. 265-278 ◽  
Author(s):  
PRADEEP K. GUPTA ◽  
PRANAY K. SEN
Keyword(s):  
Brillouin Scattering ◽  
Stimulated Brillouin Scattering ◽  
Damage Threshold ◽  
Qualitative Behavior ◽  
Pump Field ◽  
Coupled Mode ◽  
Type Semiconductor ◽  
Brillouin Gain ◽  
Piezoelectric Semiconductors ◽  
Stimulated Brillouin

Based upon the hydrodynamic model of an one-component semiconductor plasma, a detailed analytical study of stimulated Brillouin scattering (SBS) processes in a doped weakly piezoelectric semiconductor has been made following the coupled mode approach. The nonlinear effective polarization and the corresponding third-order optical susceptibility at Stokes frequency for the SBS processes are obtained. The analysis deals with the qualitative behavior of threshold pump electric field required for the onset of SBS and the Brillouin gain with respect to the doping concentration well above threshold. Numerical analysis has been made for n-type InSb crystal duly irradiated by a nanosecond pulsed 10.6 μm CO 2 laser. The influence of piezoelectric properties of the crystal medium on both threshold pump field and Brillouin gain has been explored and it is found that SBS with significant gain at lower threshold pump field could be achieved in the weakly piezoelectric moderately doped n-type semiconductor. The Brillouin gain is noted to be significantly large only over a very narrow doping range. The theoretical analysis shows that the doped III–V semiconductors have a good potentiality in the fabrication of SBS based phase conjugate mirrors with high reflectivity well below the optical damage threshold.

scholarly journals Stimulated Brillouin Scattering Enhanced Fibers for Narrow-Band Filtering by Tailoring Brillouin Gain Spectrum

2017 ◽  
Vol 9 (6) ◽  
pp. 1-11
Author(s):  
Zhen Guo ◽  
Changjian Ke ◽  
Chen Xing ◽  
Yibo Zhong ◽  
Guo Yin ◽  
...  
Keyword(s):  
Narrow Band ◽  
Brillouin Scattering ◽  
Stimulated Brillouin Scattering ◽  
Gain Spectrum ◽  
Brillouin Gain ◽  
Stimulated Brillouin

Enhanced levels of stimulated Brillouin reflectivity from non-Maxwellian plasmas

2007 ◽  
Vol 73 (2) ◽  
pp. 159-166 ◽  
Author(s):  
M.S. BAWA'ANEH ◽  
T.J.M. BOYD
Keyword(s):  
Experimental Data ◽  
Acoustic Noise ◽  
Brillouin Scattering ◽  
Stimulated Brillouin Scattering ◽  
Temperature Gradients ◽  
Target Plasma ◽  
Ion Acoustic ◽  
Brillouin Gain ◽  
Stimulated Brillouin

Abstract.A model that counts for temperature gradients in the target plasma, which leads to higher ion acoustic noise and enhanced levels of stimulated Brillouin scattering (SBS) gain and SBS reflectivity, has been adopted. Enhanced Brillouin gain leading to higher SBS reflectivity levels has been computed for non-homogeneous, non-Maxwellian plasmas. SBS reflectivity levels obtained are higher than those predicted by linear convective gain theory by several orders of magnitude and coincide with the high values of experimental data known in literature, which could not be interpreted by the linear convective gain theory.

INFLUENCE OF PIEZOELECTRICITY AND MAGNETIC FIELD ON STIMULATED BRILLOUIN SCATTERING IN III–V SEMICONDUCTORS

2006 ◽  
Vol 15 (04) ◽  
pp. 465-479 ◽  
Author(s):  
M. SINGH ◽  
P. AGHAMKAR ◽  
N. KISHORE ◽  
PRANAY K. SEN
Keyword(s):  
Magnetic Field ◽  
Brillouin Scattering ◽  
Phase Conjugation ◽  
Stimulated Brillouin Scattering ◽  
Gain Coefficient ◽  
Analytical Investigation ◽  
Magnetostatic Field ◽  
Brillouin Gain ◽  
Nonlinear Devices ◽  
Stimulated Brillouin

Using electromagnetic treatment, a detailed analytical investigation of stimulated Brillouin scattering (SBS) has been made for a semiconducting crystal in the presence of an external magnetostatic field. The effect of piezoelectricity (β) and magnetic field [Formula: see text] has been introduced through equation of motion of lattice vibration and Lorentz force, respectively. The analysis is applied to both cases viz. non-piezoelectric (β = 0) and piezoelectric (β ≠ 0) in the absence (B0 =0) and the presence (B0 ≠ 0) of external magnetostatic field. The numerical estimates are made for n-type InSb crystals, taken as representative III–V semiconductor, duly shined upon by pulsed 10.6 μm CO 2 laser. The inclination of applied magnetostatic field with respect to the direction of propagation of pump beam is found to augment the gain coefficient for the onset of stimulated Brillouin scattering. Moreover, the SBS gain coefficient increases with increasing scattering angle and results in a maximum value for the backscattered mode. The backward Brillouin gain is found to be nearly 104 times larger than forward gain when β ≠ 0 and B0 = 10T. The analysis also suggests the possibility of observing optical phase conjugation reflectivity as high as 106 in the weakly piezoelectric doped semiconductors with moderate magnetostatic field. The numerical estimation suggests that piezoelectric doped III–V semiconductors in the presence of magnetic field are candidate materials for fabrication of cubic nonlinear devices.

scholarly journals Mathematical model of optical amplifier using nonlinear stimulated Brillouin scattering (SBS) in optical fiber

2007 ◽  
Vol 4 (1) ◽  
pp. 142-146
Author(s):  
Baghdad Science Journal
Keyword(s):  
Mathematical Model ◽  
Pump Power ◽  
Fiber Length ◽  
Brillouin Scattering ◽  
Stimulated Brillouin Scattering ◽  
Acoustic Vibration ◽  
Optical Amplifier ◽  
High Pump Power ◽  
Brillouin Gain ◽  
Stimulated Brillouin

We demonstrate the results of a mathematical model for investigation the nonlinear Stimulated Brillouin Scattering (SBS), which can be employed to achieve high optical amplifier. The SBS is created by interaction between the incident We demonstrate the results of a mathematical model for investigation the nonlinear Stimulated Brillouin Scattering (SBS), which can be employed to achieve high optical amplifier. The SBS is created by interaction between the incident light and the acoustic vibration fiber. The design criteria and the amplification characteristic of the Brillouin amplifier is demonstrated and discussed for fiber Brillouin amplifier using different pump power with different fiber length. The results show, high Brillouin gain can be achieved with high pump power and long effective fiber length.and the acoustic vibration fiber. The design criteria and the amplification characteristic of the Brillouin amplifier is demonstrated and discussed for fiber Brillouin amplifier using different pump power with different fiber length. The results show, high Brillouin gain can be achieved with high pump power and long effective fiber length.

scholarly journals Investigation of optical limiting characteristic based on the combination of stimulated Brillouin scattering and metal-phthalocyanine complex

2011 ◽  
Vol 30 (1) ◽  
pp. 17-21 ◽  
Author(s):  
X.Z. Geng ◽  
W.L.J. Hasi ◽  
C.Y. Jin ◽  
D.Y. Lin ◽  
W.M. He ◽  
...  
Keyword(s):  
Brillouin Scattering ◽  
Stimulated Brillouin Scattering ◽  
Damage Threshold ◽  
Response Speed ◽  
Optical Limiting ◽  
Output Energy ◽  
Nonlinear Material ◽  
Compound Method ◽  
Stimulated Brillouin ◽  
Limiting Threshold

AbstractIn this paper, a scheme of compound optical limiting based on nonlinear material dissolved into Brillouin medium is proposed. Both nonlinear material and Brillouin medium used as the solvent play roles of optical limiting, so the proposed optical limiting scheme presents a lower output clamp value and flatter output energy compared with the single stimulated Brillouin scattering (SBS). Compound optical limiting of F16PCCu/acetone is prepared and output energy characteristic based on it is studied in this paper. Both the theoretical and experimental results indicate that the output clamp value and output energy based on the compound method is lower and flatter than that based on single SBS optical limiting. Some properties of the compound optical limiting, such as limiting energy range, limiting waveband, response speed, limiting threshold and damage threshold, also are analyzed and discussed in the later part of this paper.

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