FIELD-EFFECT TRANSISTOR STRUCTURES WITH QUASI-ONE-DIMENSIONAL CHANNEL

2004 ◽  
Vol 03 (01n02) ◽  
pp. 161-170 ◽  
Author(s):  
SLAVA V. ROTKIN ◽  
HARRY E. RUDA ◽  
ALEXANDER SHIK
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
Drift Diffusion Model ◽  
Semiconductor Nanowire ◽  
One Dimensional ◽  
Analytic Expressions ◽  
Effect Transistor ◽  
The Difference ◽  
Electrostatic Calculations ◽  
Unified Description

Drift–diffusion model is applied for transport in a one-dimensional field effect transistor. A unified description is given for a semiconductor nanowire and a single wall nanotube basing on a self-consistent electrostatic calculations. General analytic expressions are found for basic device characteristic which differ from those for bulk transistors. We explain the difference in terms of weaker screening and specific charge density distribution in quasi-one-dimensional channel. The device characteristics are shown to be sensitive to the geometry of leads and are analyzed separately for bulk, planar and wire contacts.

Epoxy Cure Monitoring With An Interdigitated Gate Electrode Field Effect Transistor (IGEFET)

1997 ◽  
Vol 503 ◽  
Author(s):  
E. S. Kolesar ◽  
J. M. Wiseman
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
Pulse Signal ◽  
Oxide Semiconductor ◽  
Electrical Performance ◽  
Gate Electrode ◽  
Electrode Structure ◽  
Difference Spectra ◽  
Effect Transistor ◽  
The Difference

ABSTRACTAn interdigitated gate electrode field-effect transistor (IGEFET) was designed, fabricated and used to monitor the cure of a common epoxy. The IGEFET sensor consists of an interdigitated gate electrode structure which is coupled to the gate contact of a conventional metal-oxide-semiconductor field-effect transistor (MOSFET). The epoxy was deposited on the interdigitated gate electrode, and the IGEFET's electrical performance was observed as the epoxy cured. The cross-linking chemical reaction during epoxy cure caused electrical impedance changes that were quantified when the IGEFET was operated with a periodic voltage pulse signal. Charge transferred through the chemically-active epoxy is manifested as a temporally-dependent potential applied to the MOSFET's gate contact. By operating the MOSFET as a linear amplifier, a potential corresponding to the temporally-dependent gate voltage was directly measured at the amplifier's output. The Fourier transform of the IGEFET's time-domain response at specific time increments was computed. The resulting epoxy cure spectra were compared to a reproducible baseline spectrum, and an ensemble of difference spectra were computed to reveal the epoxy's chemical state at specific instances of time. The difference spectra features yield valuable information concerning the state of the epoxy's cure.

Electronic properties of a one‐dimensional channel field effect transistor formed by molecular beam epitaxial regrowth on patterned GaAs

1993 ◽  
Vol 63 (16) ◽  
pp. 2219-2221 ◽  
Author(s):  
J. H. Burroughes ◽  
M. L. Leadbeater ◽  
M. P. Grimshaw ◽  
R. J. Evans ◽  
D. A. Ritchie ◽  
...  
Keyword(s):  
Electronic Properties ◽  
Field Effect ◽  
Molecular Beam ◽  
Field Effect Transistor ◽  
One Dimensional ◽  
Molecular Beam Epitaxial ◽  
Epitaxial Regrowth ◽  
Effect Transistor

Quasi-One-Dimensional Performance and Benchmarking of CMOS-Based Multichannel Carbon Nanotube versus Nanowire Field-Effect Transistor Models

2015 ◽  
Vol 7 (1) ◽  
pp. 178-189
Author(s):  
Huei Chaeng Chin ◽  
Cheng Siong Lim ◽  
Kumeresan A. Danapalasingam ◽  
Vijay K. Arora ◽  
Michael Loong Peng Tan
Keyword(s):  
Carbon Nanotube ◽  
Field Effect ◽  
Field Effect Transistor ◽  
One Dimensional ◽  
Effect Transistor

Detection of a 2.8 THz quantum cascade laser with a semiconductor nanowire field-effect transistor coupled to a bow-tie antenna

2014 ◽  
Vol 104 (8) ◽  
pp. 083116 ◽  
Author(s):  
M. Ravaro ◽  
M. Locatelli ◽  
L. Viti ◽  
D. Ercolani ◽  
L. Consolino ◽  
...  
Keyword(s):  
Quantum Cascade Laser ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Semiconductor Nanowire ◽  
Quantum Cascade ◽  
Effect Transistor ◽  
Bow Tie

Evidence of a fully ballistic one-dimensional field-effect transistor: Experiment and simulation

2010 ◽  
Vol 97 (23) ◽  
pp. 233505 ◽  
Author(s):  
E. Grémion ◽  
D. Niepce ◽  
A. Cavanna ◽  
U. Gennser ◽  
Y. Jin
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
One Dimensional ◽  
Effect Transistor ◽  
Experiment And Simulation

Large-scale, solution-phase growth of semiconductor nanocrystals into ultralong one-dimensional arrays and study of their electrical properties

Nanoscale ◽  
2014 ◽  
Vol 6 (12) ◽  
pp. 6828-6836 ◽  
Author(s):  
Yuchao Ma ◽  
Mengmeng Xue ◽  
Jiahua Shi ◽  
Yiwei Tan
Keyword(s):  
Electrical Properties ◽  
Field Effect ◽  
Large Scale ◽  
Field Effect Transistor ◽  
Semiconductor Nanocrystals ◽  
Solution Phase ◽  
Phase Growth ◽  
One Dimensional ◽  
Effect Transistor

A series of one-dimensional assemblies of semiconductor nanocrystals with enhanced field effect transistor performance has been studied.

One‐dimensional lateral‐field‐effect transistor with trench gate‐channel insulation

1990 ◽  
Vol 57 (25) ◽  
pp. 2695-2697 ◽  
Author(s):  
J. Nieder ◽  
A. D. Wieck ◽  
P. Grambow ◽  
H. Lage ◽  
D. Heitmann ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
Lateral Field ◽  
One Dimensional ◽  
Effect Transistor
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