Epoxy Cure Monitoring With An Interdigitated Gate Electrode Field Effect Transistor (IGEFET)

1997 ◽  
Vol 503 ◽  
Author(s):  
E. S. Kolesar ◽  
J. M. Wiseman
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
Pulse Signal ◽  
Oxide Semiconductor ◽  
Electrical Performance ◽  
Gate Electrode ◽  
Electrode Structure ◽  
Difference Spectra ◽  
Effect Transistor ◽  
The Difference

ABSTRACTAn interdigitated gate electrode field-effect transistor (IGEFET) was designed, fabricated and used to monitor the cure of a common epoxy. The IGEFET sensor consists of an interdigitated gate electrode structure which is coupled to the gate contact of a conventional metal-oxide-semiconductor field-effect transistor (MOSFET). The epoxy was deposited on the interdigitated gate electrode, and the IGEFET's electrical performance was observed as the epoxy cured. The cross-linking chemical reaction during epoxy cure caused electrical impedance changes that were quantified when the IGEFET was operated with a periodic voltage pulse signal. Charge transferred through the chemically-active epoxy is manifested as a temporally-dependent potential applied to the MOSFET's gate contact. By operating the MOSFET as a linear amplifier, a potential corresponding to the temporally-dependent gate voltage was directly measured at the amplifier's output. The Fourier transform of the IGEFET's time-domain response at specific time increments was computed. The resulting epoxy cure spectra were compared to a reproducible baseline spectrum, and an ensemble of difference spectra were computed to reveal the epoxy's chemical state at specific instances of time. The difference spectra features yield valuable information concerning the state of the epoxy's cure.

Molybdenum Film Technology For Power Metal Oxide Semiconductor Field Effect Transistor Gate Electrode Applications

2000 ◽  
Vol 39 (Part 1, No. 7A) ◽  
pp. 3915-3918 ◽  
Author(s):  
Ying-Kun Liu ◽  
Chun-Guang Liang ◽  
Zhan-Li Wang ◽  
Yu-Zhang He ◽  
Xiu-Lan Lang ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Gate Electrode ◽  
Effect Transistor

scholarly journals Ab initio perspective of ultra-scaled CMOS from 2D-material fundamentals to dynamically doped transistors

2021 ◽  
Vol 5 (1) ◽  
Author(s):  
Aryan Afzalian
Keyword(s):  
Field Effect ◽  
High Performance ◽  
Field Effect Transistor ◽  
High Mobility ◽  
Complementary Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Grand Challenge ◽  
Gate Length ◽  
Delay Performance ◽  
Effect Transistor

AbstractUsing accurate dissipative DFT-NEGF atomistic-simulation techniques within the Wannier-Function formalism, we give a fresh look at the possibility of sub-10-nm scaling for high-performance complementary metal oxide semiconductor (CMOS) applications. We show that a combination of good electrostatic control together with high mobility is paramount to meet the stringent roadmap targets. Such requirements typically play against each other at sub-10-nm gate length for MOS transistors made of conventional semiconductor materials like Si, Ge, or III–V and dimensional scaling is expected to end ~12 nm gate-length (pitch of 40 nm). We demonstrate that using alternative 2D channel materials, such as the less-explored HfS2 or ZrS2, high-drive current down to ~6 nm is, however, achievable. We also propose a dynamically doped field-effect transistor concept, that scales better than its MOSFET counterpart. Used in combination with a high-mobility material such as HfS2, it allows for keeping the stringent high-performance CMOS on current and competitive energy-delay performance, when scaling down to virtually 0 nm gate length using a single-gate architecture and an ultra-compact design (pitch of 22 nm). The dynamically doped field-effect transistor further addresses the grand-challenge of doping in ultra-scaled devices and 2D materials in particular.

scholarly journals 4H-SiC Double Trench MOSFET with Split Heterojunction Gate for Improving Switching Characteristics

Materials ◽  
2021 ◽  
Vol 14 (13) ◽  
pp. 3554
Author(s):  
Jaeyeop Na ◽  
Jinhee Cheon ◽  
Kwangsoo Kim
Keyword(s):  
Dynamic Characteristics ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Switching Loss ◽  
Switching Speed ◽  
Polysilicon Gate ◽  
Effect Transistor ◽  
Switching Characteristics

In this paper, a novel 4H-SiC split heterojunction gate double trench metal-oxide-semiconductor field-effect transistor (SHG-DTMOS) is proposed to improve switching speed and loss. The device modifies the split gate double trench MOSFET (SG-DTMOS) by changing the N+ polysilicon split gate to the P+ polysilicon split gate. It has two separate P+ shielding regions under the gate to use the P+ split polysilicon gate as a heterojunction body diode and prevent reverse leakage `current. The static and most dynamic characteristics of the SHG-DTMOS are almost like those of the SG-DTMOS. However, the reverse recovery charge is improved by 65.83% and 73.45%, and the switching loss is improved by 54.84% and 44.98%, respectively, compared with the conventional double trench MOSFET (Con-DTMOS) and SG-DTMOS owing to the heterojunction.

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