THRESHOLD AND SATURATION VOLTAGES MODELING OF CARBON NANOTUBE FIELD EFFECT TRANSISTORS (CNT-FETs)

We present analytical model equations for threshold voltage (Vth) and saturation voltage (Vds,sat) characterizing CNT-FETs. These model equations have been obtained from the charge and potential distributions between the gate and substrate in a CNT-FET. It is shown that both Vth and Vds,sat are strongly dependent on chiral vectors of CNTs. The results show close agreement between theoretical and graphical modeling techniques. It is also shown that the calculated Vth of a CNT-FET with chiral vector (3, 1) is in close agreement with the corresponding published work.

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Analytical model of Carbon Nanotube Field Effect Transistors for NEMS applications

2008 51st Midwest Symposium on Circuits and Systems ◽

10.1109/mwscas.2008.4616736 ◽

2008 ◽

Cited By ~ 3

Author(s):

Bashirul Polash ◽

Hasina F. Huq

Keyword(s):

Carbon Nanotube ◽

Analytical Model ◽

Field Effect ◽

Field Effect Transistors

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Continuous adjustment of threshold voltage in carbon nanotube field-effect transistors through gate engineering

Applied Physics Letters ◽

10.1063/1.5021274 ◽

2018 ◽

Vol 112 (15) ◽

pp. 153109 ◽

Cited By ~ 6

Author(s):

Donglai Zhong ◽

Chenyi Zhao ◽

Lijun Liu ◽

Zhiyong Zhang ◽

Lian-Mao Peng

Keyword(s):

Carbon Nanotube ◽

Threshold Voltage ◽

Field Effect ◽

Field Effect Transistors ◽

Gate Engineering

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Threshold voltage dispersion and impurity scattering limited mobility in carbon nanotube field effect transistors with randomly doped reservoirs

2006 European Solid-State Device Research Conference ◽

10.1109/essder.2006.307673 ◽

2006 ◽

Cited By ~ 3

Author(s):

Gianluca Fiori ◽

Giuseppe Iannaccone

Keyword(s):

Carbon Nanotube ◽

Threshold Voltage ◽

Field Effect ◽

Field Effect Transistors ◽

Impurity Scattering ◽

Limited Mobility

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The Origins and Characteristics of the Threshold Voltage Variability of Quasi-Ballistic Single-Walled Carbon Nanotube Field-Effect Transistors

ECS Meeting Abstracts ◽

10.1149/ma2015-02/10/602 ◽

2015 ◽

Keyword(s):

Carbon Nanotube ◽

Threshold Voltage ◽

Field Effect ◽

Field Effect Transistors ◽

Single Walled Carbon Nanotube ◽

Single Walled Carbon

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Self-Aligned Ballistic n-Type Single-Walled Carbon Nanotube Field-Effect Transistors with Adjustable Threshold Voltage

Nano Letters ◽

10.1021/nl8018802 ◽

2008 ◽

Vol 8 (11) ◽

pp. 3696-3701 ◽

Cited By ~ 109

Author(s):

Zhiyong Zhang ◽

Sheng Wang ◽

Li Ding ◽

Xuelei Liang ◽

Tian Pei ◽

...

Keyword(s):

Carbon Nanotube ◽

Threshold Voltage ◽

Field Effect ◽

Field Effect Transistors ◽

Single Walled Carbon Nanotube ◽

Single Walled Carbon

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Analytical model for ballistic MOSFET-like carbon nanotube field-effect transistors

2013 Saudi International Electronics, Communications and Photonics Conference ◽

10.1109/siecpc.2013.6551004 ◽

2013 ◽

Author(s):

Tarek M. Abdolkader ◽

Esam M. Yousry ◽

Wael Fikry

Keyword(s):

Carbon Nanotube ◽

Analytical Model ◽

Field Effect ◽

Field Effect Transistors

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Analytical model for threshold voltage of double gate bilayer graphene field effect transistors

Microelectronics Reliability ◽

10.1016/j.microrel.2013.08.003 ◽

2014 ◽

Vol 54 (1) ◽

pp. 44-48 ◽

Cited By ~ 2

Author(s):

M. Saeidmanesh ◽

M. Rahmani ◽

H. Karimi ◽

M. Khaledian ◽

Razali Ismail

Keyword(s):

Analytical Model ◽

Threshold Voltage ◽

Field Effect ◽

Field Effect Transistors ◽

Bilayer Graphene ◽

Double Gate

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Link among array non-uniformity, threshold voltage, and subthreshold swing degradation in aligned array carbon nanotube field effect transistors

Journal of Applied Physics ◽

10.1063/5.0031082 ◽

2020 ◽

Vol 128 (23) ◽

pp. 234301

Author(s):

Sean M. Foradori ◽

Katherine R. Jinkins ◽

Michael S. Arnold

Keyword(s):

Carbon Nanotube ◽

Threshold Voltage ◽

Field Effect ◽

Field Effect Transistors ◽

Subthreshold Swing ◽

Aligned Array

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Band Engineering of Partially Exposed Carbon Nanotube Field-Effect Transistors

MRS Proceedings ◽

10.1557/proc-858-hh9.2 ◽

2004 ◽

Vol 858 ◽

Author(s):

Xiaolei Liu ◽

Zhicheng Luo ◽

Song Han ◽

Tao Tang ◽

Daihua Zhang ◽

...

Keyword(s):

Carbon Nanotube ◽

Threshold Voltage ◽

Field Effect ◽

Field Effect Transistors ◽

Good Control ◽

Subthreshold Swing ◽

New Approach ◽

Band Engineering ◽

Chemical Gating ◽

Reducing Gases

ABSTRACTWe present a new approach to engineer the band structure of carbon nanotube field-effect transistors via selected area chemical gating. By exposing the center part or the contacts of the nanotube devices to oxidizing or reducing gases, a good control over the threshold voltage and subthreshold swing has been achieved. Our experiments reveal that NO2 shifts the threshold voltage higher while NH3 shifts it lower for both center-exposed and contact-exposed devices. However, modulations to the subthreshold swing are in opposite directions for center-exposed and contact-exposed devices: NO2 lowers the subthreshold swing of the contact-exposed devices, but increases that of the center-exposed devices; In contrast, NH3 reduces the subthreshold swing of the center-exposed devices, but increases that of the contact-exposed devices. A model has been developed based on Langmuir isotherm, and the experimental results can be well explained.

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