Analytical model for threshold voltage of double gate bilayer graphene field effect transistors

The threshold voltage of β-Ga2O3 metal–insulator–semiconductor field-effect transistors is controlled via remote fluorine plasma treatment, enabling an enhancement-mode operation under double gate condition.

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Analytical Threshold Voltage Model of Schottky-source/drain (Schottky-S/D) double gate-all-around (DGAA) Field-Effect-Transistors (FETs)

2019 Devices for Integrated Circuit (DevIC) ◽

10.1109/devic.2019.8783617 ◽

2019 ◽

Cited By ~ 1

Author(s):

Arun Kumar ◽

P.S.T.N. Srinivas ◽

Pramod Kumar Tiwari

Keyword(s):

Threshold Voltage ◽

Field Effect ◽

Field Effect Transistors ◽

Double Gate ◽

Threshold Voltage Model

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Effect of Source/Drain Doping Gradient on Threshold Voltage Variation in Double-Gate Fin Field Effect Transistors as Determined by Discrete Random Doping

Japanese Journal of Applied Physics ◽

10.1143/jjap.49.104301 ◽

2010 ◽

Vol 49 (10) ◽

pp. 104301 ◽

Cited By ~ 3

Author(s):

Dae-hyun Moon ◽

Jae-Joon Song ◽

Ohyun Kim

Keyword(s):

Threshold Voltage ◽

Field Effect ◽

Field Effect Transistors ◽

Double Gate ◽

Voltage Variation

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Threshold voltage roll-off modelling of bilayer graphene field-effect transistors

Semiconductor Science and Technology ◽

10.1088/0268-1242/28/12/125020 ◽

2013 ◽

Vol 28 (12) ◽

pp. 125020 ◽

Cited By ~ 3

Author(s):

M Saeidmanesh ◽

Razali Ismail ◽

M Khaledian ◽

H Karimi ◽

E Akbari

Keyword(s):

Threshold Voltage ◽

Field Effect ◽

Field Effect Transistors ◽

Bilayer Graphene

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A New Two-Dimensional Analytical Model for Short-Channel Symmetrical Dual-Material Double-Gate Metal–Oxide–Semiconductor Field Effect Transistors

Japanese Journal of Applied Physics ◽

10.1143/jjap.46.3283 ◽

2007 ◽

Vol 46 (6A) ◽

pp. 3283-3290 ◽

Cited By ~ 20

Author(s):

Te-Kuang Chiang ◽

Mei-Li Chen

Keyword(s):

Metal Oxide ◽

Analytical Model ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Double Gate ◽

Two Dimensional ◽

Short Channel ◽

Dual Material

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THRESHOLD AND SATURATION VOLTAGES MODELING OF CARBON NANOTUBE FIELD EFFECT TRANSISTORS (CNT-FETs)

NANO ◽

10.1142/s1793292008000952 ◽

2008 ◽

Vol 03 (03) ◽

pp. 195-201 ◽

Cited By ~ 8

Author(s):

JOSE M. MARULANDA ◽

ASHOK SRIVASTAVA ◽

ASHWANI K. SHARMA

Keyword(s):

Carbon Nanotube ◽

Analytical Model ◽

Threshold Voltage ◽

Field Effect ◽

Close Agreement ◽

Field Effect Transistors ◽

Graphical Modeling ◽

Chiral Vector ◽

Modeling Techniques ◽

Model Equations

We present analytical model equations for threshold voltage (Vth) and saturation voltage (Vds,sat) characterizing CNT-FETs. These model equations have been obtained from the charge and potential distributions between the gate and substrate in a CNT-FET. It is shown that both Vth and Vds,sat are strongly dependent on chiral vectors of CNTs. The results show close agreement between theoretical and graphical modeling techniques. It is also shown that the calculated Vth of a CNT-FET with chiral vector (3, 1) is in close agreement with the corresponding published work.

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Impact of fin length on threshold voltage modulation by back bias for Independent double-gate tunnel fin field-effect transistors

Solid-State Electronics ◽

10.1016/j.sse.2015.04.011 ◽

2015 ◽

Vol 111 ◽

pp. 62-66 ◽

Cited By ~ 3

Author(s):

W. Mizubayashi ◽

K. Fukuda ◽

T. Mori ◽

K. Endo ◽

Y.X. Liu ◽

...

Keyword(s):

Threshold Voltage ◽

Field Effect ◽

Field Effect Transistors ◽

Double Gate ◽

Fin Length

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Capacitance Variation of Electrolyte-Gated Bilayer Graphene Based Transistors

Journal of Nanomaterials ◽

10.1155/2013/836315 ◽

2013 ◽

Vol 2013 ◽

pp. 1-5 ◽

Cited By ~ 1

Author(s):

Hediyeh Karimi ◽

Rubiyah Yusof ◽

Mohammad Taghi Ahmadi ◽

Mehdi Saeidmanesh ◽

Meisam Rahmani ◽

...

Keyword(s):

Analytical Model ◽

Field Effect ◽

Energy Gap ◽

Field Effect Transistors ◽

Bilayer Graphene ◽

Quantum Capacitance ◽

Chemical Doping ◽

Layer Graphene ◽

Capacitance Variation ◽

Acceptable Agreement

Quantum capacitance of electrolyte-gated bilayer graphene field-effect transistors is investigated in this paper. Bilayer graphene has received huge attention due to the fact that an energy gap could be opened by chemical doping or by applying external perpendicular electric field. So, this extraordinary property can be exploited to use bilayer graphene as a channel in electrolyte-gated field-effect transistors. The quantum capacitance of bi-layer graphene with an equivalent circuit is presented, and also based on the analytical model a numerical solution is reported. We begin by modeling the DOS, followed by carrier concentration as a functionVin degenerate and nondegenerate regimes. To further confirm this viewpoint, the presented analytical model is compared with experimental data, and acceptable agreement is reported.

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