Wet Chemical Surface Passivation of Germanium Wafers by Quinhydrone–Methanol Treatment for Minority Carrier Lifetime Measurements

2009 ◽  
Vol 2 (10) ◽  
pp. 105501 ◽  
Author(s):  
Bibhu P. Swain ◽  
Hidetaka Takato ◽  
Isao Sakata
Keyword(s):  
Carrier Lifetime ◽  
Surface Passivation ◽  
Minority Carrier ◽  
Minority Carrier Lifetime ◽  
Lifetime Measurements ◽  
Chemical Surface ◽  
Methanol Treatment ◽  
Wet Chemical

Surface Passivation of Silicon Wafers by Iodine-Ethanol (I-E) for Minority Carrier Lifetime Measurements

2013 ◽  
Vol 652-654 ◽  
pp. 901-905 ◽  
Author(s):  
Jing Wei Chen ◽  
Lei Zhao ◽  
Hong Wei Diao ◽  
Bao Jun Yan ◽  
Su Zhou ◽  
...  
Keyword(s):  
Silicon Surface ◽  
Carrier Lifetime ◽  
Surface Passivation ◽  
Minority Carrier ◽  
Minority Carrier Lifetime ◽  
Lifetime Measurements ◽  
P Type ◽  
Different Thickness ◽  
Minority Carriers

The effective minority carrier lifetime (τeff) depends upon the quality of surface passivation, which by means of the microwave photoconductance decays (μPCD) method. The effective minority carrier lifetime (τeff) cannot reveal the real bulk lifetime of minority carriers (τb) . We have applied iodine-ethanol (I-E) treatment to silicon surface at different molar concentrations and shown that the effective concentrations ranges was 0.08mol/L~0.16 mol/L, the maximum The effective minority carrier lifetime (τeff) of n-type monocrystalline and p-type monocrystalline was 973.71μs and 362.6μs, respectively. We also accurately evaluate the bulk lifetime of minority carriers by measured with different thickness of silicon substrate.

Minority Carrier Lifetime Measurements by Photoinduced Carrier Microwave Absorption Method

2011 ◽  
Vol 50 (3S) ◽  
pp. 03CA02 ◽  
Author(s):  
Toshiyuki Sameshima ◽  
Tomokazu Nagao ◽  
Shinya Yoshidomi ◽  
Kazuya Kogure ◽  
Masahiko Hasumi
Keyword(s):  
Microwave Absorption ◽  
Carrier Lifetime ◽  
Minority Carrier ◽  
Minority Carrier Lifetime ◽  
Absorption Method ◽  
Lifetime Measurements

Influence of surface passivation on the minority carrier lifetime, Fe-B pair density and recombination center concentration

2010 ◽  
Vol 55 (17) ◽  
pp. 1828-1833 ◽  
Author(s):  
Feng Li ◽  
ZhongQuan Ma ◽  
XiaJie Meng ◽  
Peng Lü ◽  
ZhengShan Yu ◽  
...  
Keyword(s):  
Carrier Lifetime ◽  
Surface Passivation ◽  
Minority Carrier ◽  
Minority Carrier Lifetime ◽  
Recombination Center ◽  
Pair Density

Minority Carrier Lifetime Measurements in Specific Epitaxial 4H-SiC Layers by the Microwave Photoconductivity Decay

2009 ◽  
Vol 615-617 ◽  
pp. 295-298 ◽  
Author(s):  
Laurent Ottaviani ◽  
Olivier Palais ◽  
Damien Barakel ◽  
Marcel Pasquinelli
Keyword(s):  
Absorption Spectra ◽  
Carrier Lifetime ◽  
Minority Carrier ◽  
Optical Excitation ◽  
Minority Carrier Lifetime ◽  
Lifetime Measurements ◽  
Recombination Processes ◽  
Photoconductivity Decay ◽  
P Type ◽  
Non Destructive

We report on measurements of the minority carrier lifetime for different epitaxial 4H-SiC layers by using the microwave photoconductivity decay (µ-PCD) method. This is a non-contacting, non-destructive method very useful for the monitoring of recombination processes in semiconductor material. Distinct samples have been analyzed, giving different lifetime values. Transmittance and absorption spectra have also been carried out. The n-type layers, giving rise to a specific absorption peak near 470 nm, are not sensitive to optical excitation for the used wavelengths, as opposite to p-type layers whose lifetime values depend on thickness and doping.

Surface Passivation of Crystalline Silicon by a-Si:H Thin Films

2014 ◽  
Vol 936 ◽  
pp. 603-606
Author(s):  
Yin Wang ◽  
Wei Li ◽  
An Ran Guo ◽  
Feng Yu ◽  
Jian He ◽  
...  
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Carrier Lifetime ◽  
Surface Passivation ◽  
Minority Carrier ◽  
Crystalline Silicon ◽  
Minority Carrier Lifetime ◽  
Rf Magnetron Sputtering ◽  
Hydrogen Flow Rate ◽  
Hydrogen Flow

Surface passivation of c-Si by a-Si:H thin films has been studied. In this paper, the minority carrier lifetime of 345μs (from 85μs) is obtained at optimal hydrogen flow rate (8.0sccm) by using RF-magnetron sputtering method.

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