Minority Carrier Lifetime Measurements in Specific Epitaxial 4H-SiC Layers by the Microwave Photoconductivity Decay

2009 ◽  
Vol 615-617 ◽  
pp. 295-298 ◽  
Author(s):  
Laurent Ottaviani ◽  
Olivier Palais ◽  
Damien Barakel ◽  
Marcel Pasquinelli
Keyword(s):  
Absorption Spectra ◽  
Carrier Lifetime ◽  
Minority Carrier ◽  
Optical Excitation ◽  
Minority Carrier Lifetime ◽  
Lifetime Measurements ◽  
Recombination Processes ◽  
Photoconductivity Decay ◽  
P Type ◽  
Non Destructive

We report on measurements of the minority carrier lifetime for different epitaxial 4H-SiC layers by using the microwave photoconductivity decay (µ-PCD) method. This is a non-contacting, non-destructive method very useful for the monitoring of recombination processes in semiconductor material. Distinct samples have been analyzed, giving different lifetime values. Transmittance and absorption spectra have also been carried out. The n-type layers, giving rise to a specific absorption peak near 470 nm, are not sensitive to optical excitation for the used wavelengths, as opposite to p-type layers whose lifetime values depend on thickness and doping.

Surface Passivation of Silicon Wafers by Iodine-Ethanol (I-E) for Minority Carrier Lifetime Measurements

2013 ◽  
Vol 652-654 ◽  
pp. 901-905 ◽  
Author(s):  
Jing Wei Chen ◽  
Lei Zhao ◽  
Hong Wei Diao ◽  
Bao Jun Yan ◽  
Su Zhou ◽  
...  
Keyword(s):  
Silicon Surface ◽  
Carrier Lifetime ◽  
Surface Passivation ◽  
Minority Carrier ◽  
Minority Carrier Lifetime ◽  
Lifetime Measurements ◽  
P Type ◽  
Different Thickness ◽  
Minority Carriers

The effective minority carrier lifetime (τeff) depends upon the quality of surface passivation, which by means of the microwave photoconductance decays (μPCD) method. The effective minority carrier lifetime (τeff) cannot reveal the real bulk lifetime of minority carriers (τb) . We have applied iodine-ethanol (I-E) treatment to silicon surface at different molar concentrations and shown that the effective concentrations ranges was 0.08mol/L~0.16 mol/L, the maximum The effective minority carrier lifetime (τeff) of n-type monocrystalline and p-type monocrystalline was 973.71μs and 362.6μs, respectively. We also accurately evaluate the bulk lifetime of minority carriers by measured with different thickness of silicon substrate.

Characterization of Ga Co-Doping mc-Si Ingot Made of Solar-Grade Silicon Purified by Metallurgical Route

2013 ◽  
Vol 703 ◽  
pp. 58-62 ◽  
Author(s):  
Xian Pei Ren ◽  
Peng Wu ◽  
Shuai Li ◽  
Hao Ran Cheng ◽  
Wen Xiu Gao ◽  
...  
Keyword(s):  
Carrier Lifetime ◽  
Minority Carrier ◽  
Minority Carrier Lifetime ◽  
Solar Grade Silicon ◽  
Lifetime Measurements ◽  
Standard Material ◽  
Co Doping ◽  
Grade Silicon ◽  
P Type

In this paper, we investigated the characterization of a gallium co-doping multicrystalline silicon ingot made of solar-grade silicon purified by metallurgical route. It is shown that the addition of gallium yields a fully p-type ingot and resistivity distribution in the range from 1.2 Ω.cm to1.7 Ω.cm along the full ingot height. Minority carrier lifetime measurements indicate that this material is suitable for the production of solar cells with comparable efficiencies to standard material. In addition, gallium addition in compensated silicon during ingot casting is proved to be very prospective for controlling the resistivity and increasing material yield of ingot.

scholarly journals Nickel and gold identification in p-type silicon through TDLS: a modeling study

2021 ◽  
Vol 93 (4) ◽  
pp. 40101
Author(s):  
Sarra Dehili ◽  
Damien Barakel ◽  
Laurent Ottaviani ◽  
Olivier Palais
Keyword(s):  
Cross Section ◽  
Carrier Lifetime ◽  
Minority Carrier ◽  
Minority Carrier Lifetime ◽  
Defect Level ◽  
Temperature Dependent ◽  
Lifetime Measurements ◽  
Recombination Centers ◽  
P Type ◽  
Minority Carriers

In Silicon, impurities introduce recombination centers and degrade the minority carrier lifetime. It is therefore important to identify the nature of these impurities through their characteristics: the capture cross section σ and the defect level Et. For this purpose, a study of the bulk lifetime of minority carriers can be carried out. The temperature dependence of the lifetime based on the Shockley-Read-Hall (SRH) statistic and related to recombination through defects is studied. Nickel and gold in p-type Si have been selected for the SRH lifetime modeling. The objective of the analysis is to carry out a study to evaluate gold and nickel identification prior to temperature-dependent lifetime measurements using the microwave phase-shift (μW-PS) technique. The μW-PS is derived from the PCD technique and is sensitive to lower impurity concentrations. It has been shown that both gold and nickel can be unambiguously identified from the calculated TDLS curves.

On the Auger Recombination Process in P-Type Lpe HgCdTe

1986 ◽  
Vol 90 ◽  
Author(s):  
J. S. Chen ◽  
J. Bajaj ◽  
W. E. Tennant ◽  
D. S. Lo ◽  
M. Brown ◽  
...  
Keyword(s):  
Liquid Phase ◽  
Auger Recombination ◽  
Carrier Lifetime ◽  
Minority Carrier ◽  
Minority Carrier Lifetime ◽  
Recombination Process ◽  
Layer Model ◽  
Lifetime Measurements ◽  
Double Layer Model ◽  
P Type

ABSTRACTMinority carrier lifetime measurements at 77K were carried out in ptype liquid phase epitaxial (LPE) Hg 1-xCdx Te/CdTe (x = 0.22) using the photoconductive decay technique. Lifetimes of 20 to 7000 ns were obtained in samples with hole concentrations, p, in the range 1014 to 1016 cm-3. The hole concentrations were determineg by analyzing the Hall data using a double-layer model. It was found that the minority carrier lifetime is inversely proportional to p01.86. This result demonstrates that the Auger mechanism may be the dominant recombination process in p-type LPE Hg0.78 Cd0.22Te/CdTe. The temperature dependence of minority carrier lifetime was also measured between 10 and 200K for several samples.

Correlation of Fe-Rich Defect Centre and Minority Carrier Lifetime in p-Type Multicrystalline Silicon

2013 ◽  
Vol 440 ◽  
pp. 82-87 ◽  
Author(s):  
Mohammad Jahangir Alam ◽  
Mohammad Ziaur Rahman
Keyword(s):  
Carrier Lifetime ◽  
Minority Carrier ◽  
Minority Carrier Lifetime ◽  
Multicrystalline Silicon ◽  
Recombination Lifetime ◽  
Spatially Resolved ◽  
Carrier Recombination ◽  
Negative Role ◽  
P Type ◽  
The Impact

A comparative study has been made to analyze the impact of interstitial iron in minority carrier lifetime of multicrystalline silicon (mc-Si). It is shown that iron plays a negative role and is considered very detrimental for minority carrier recombination lifetime. The analytical results of this study are aligned with the spatially resolved imaging analysis of iron rich mc-Si.

Resistivity dependence of minority carrier lifetime and cell performance in p-type dendritic web silicon ribbon

2001 ◽  
Vol 45 (12) ◽  
pp. 1973-1978 ◽  
Author(s):  
Mohamed Hilali ◽  
Abasifreke Ebong ◽  
Ajeet Rohatgi ◽  
Daniel L Meier
Keyword(s):  
Carrier Lifetime ◽  
Minority Carrier ◽  
Minority Carrier Lifetime ◽  
Cell Performance ◽  
Silicon Ribbon ◽  
P Type

Improved minority carrier lifetime in p-type GaN segments prepared by vacancy-guided redistribution of Mg

2021 ◽  
Vol 119 (18) ◽  
pp. 182106
Author(s):  
K. Shima ◽  
R. Tanaka ◽  
S. Takashima ◽  
K. Ueno ◽  
M. Edo ◽  
...  
Keyword(s):  
Carrier Lifetime ◽  
Minority Carrier ◽  
Minority Carrier Lifetime ◽  
P Type

The effect of oxide precipitates on minority carrier lifetime in p-type silicon

2011 ◽  
Vol 110 (5) ◽  
pp. 053713 ◽  
Author(s):  
J. D. Murphy ◽  
K. Bothe ◽  
M. Olmo ◽  
V. V. Voronkov ◽  
R. J. Falster
Keyword(s):  
Carrier Lifetime ◽  
Minority Carrier ◽  
Minority Carrier Lifetime ◽  
Type Silicon ◽  
P Type
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