Metal Ion Source for Ion Implantation System

1972 ◽  
Vol 11 (8) ◽  
pp. 1192-1198 ◽  
Author(s):  
Keizo Shimizu ◽  
Hisazo Kawakatsu ◽  
Koichi Kanaya
Keyword(s):  
Ion Implantation ◽  
Metal Ion ◽  
Ion Source

The 100‐kV gas and metal ion source for high current ion implantation

1992 ◽  
Vol 63 (4) ◽  
pp. 2422-2424 ◽  
Author(s):  
S. P. Bugaev ◽  
A. G. Nikolaev ◽  
E. M. Oks ◽  
P. M. Schanin ◽  
G. Yu. Yushkov
Keyword(s):  
Ion Implantation ◽  
Metal Ion ◽  
Ion Source ◽  
High Current

Liquid metal ion source-produced germanium ions for maskless ion implantation

2001 ◽  
Vol 34 (5) ◽  
pp. 839-839
Author(s):  
Th Ganetsos ◽  
C Aidinis ◽  
L Bischoff ◽  
G L R Mair ◽  
J Teichert
Keyword(s):  
Liquid Metal ◽  
Ion Implantation ◽  
Metal Ion ◽  
Ion Source

Liquid metal ion source-produced germanium ions for maskless ion implantation

2001 ◽  
Vol 34 (3) ◽  
pp. L11-L13 ◽  
Author(s):  
Th Ganetsos ◽  
C Aidinis ◽  
L Bischoff ◽  
G L R Mair ◽  
J Teichert ◽  
...  
Keyword(s):  
Liquid Metal ◽  
Ion Implantation ◽  
Metal Ion ◽  
Ion Source

Pd-Ni-Si-Be-B Liquid Metal Ion Source for Maskless Ion Implantation

1984 ◽  
Vol 23 (Part 2, No. 3) ◽  
pp. L165-L166 ◽  
Author(s):  
Hiroshi Arimoto ◽  
Akira Takamori ◽  
Eizo Miyauchi ◽  
Hisao Hashimoto
Keyword(s):  
Liquid Metal ◽  
Ion Implantation ◽  
Metal Ion ◽  
Ion Source

A 100 kV Maskless Ion-Implantation System with an Au-Si-Be Liquid Metal Ion Source for III-V Compound Semiconductors

1983 ◽  
Vol 22 (Part 2, No. 5) ◽  
pp. L287-L288 ◽  
Author(s):  
Eizo Miyauchi ◽  
Hiroshi Arimoto ◽  
Hisao Hashimoto ◽  
Tsuneo Furuya ◽  
Takao Utsumi
Keyword(s):  
Liquid Metal ◽  
Ion Implantation ◽  
Metal Ion ◽  
Compound Semiconductors ◽  
Ion Source

Upgraded vacuum arc ion source for metal ion implantation

2012 ◽  
Vol 83 (2) ◽  
pp. 02A501 ◽  
Author(s):  
A. G. Nikolaev ◽  
E. M. Oks ◽  
K. P. Savkin ◽  
G. Yu. Yushkov ◽  
I. G. Brown
Keyword(s):  
Ion Implantation ◽  
Metal Ion ◽  
Ion Source ◽  
Vacuum Arc ◽  
Metal Ion Implantation

scholarly journals Ion Beam Modification of the Y-Ba-Cu-O System with the Mevva High Current Metal Ion Source

1989 ◽  
Vol 147 ◽  
Author(s):  
I. G. Brown ◽  
M. D. Rubin ◽  
K. M. Yu ◽  
R. Mutikainen ◽  
N. W. Cheung
Keyword(s):  
Ion Implantation ◽  
Metal Ion ◽  
Rutherford Backscattering Spectrometry ◽  
Ion Beam ◽  
Rf Sputtering ◽  
Ion Source ◽  
Vacuum Arc ◽  
High Dose ◽  
High Current ◽  
Ion Beam Modification

AbstractWe have used high-dose metal ion implantation to ‘fine tune’ the composition of Y-Ba- Cu-O thin films. The films were prepared by either of two rf sputtering systems. One system uses three modified Varian S-guns capable of sputtering various metal powder targets; the other uses reactive rf magnetron sputtering from a single mixed-oxide stoichiometric solid target. Film thickness was typically in the range 2000–5000 A. Substrates of magnesium oxide, zirconia-buffered silicon, and strontium titanate have been used. Ion implantation was carried out using a metal vapor vacuum arc (MEVVA) high current metal ion source. Beam energy was 100–200 keV, average beam current about 1 mA, and dose up to about 1017 ions/cm2. Samples were annealed at 800 – 900°C in wet oxygen. Film composition was determined using Rutherford Backscattering Spectrometry (RBS), and the resistivity versus temperature curves were obtained using a four-point probe method. We find that the zero-resistance temperature can be greatly increased after implantation and reannealing, and that the ion beam modification technique described here provides a powerful means for optimizing the thin film superconducting properties.

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