Ion Beam Modification of the Y-Ba-Cu-O System with the Mevva High Current Metal Ion Source

AbstractWe have used high-dose metal ion implantation to ‘fine tune’ the composition of Y-Ba- Cu-O thin films. The films were prepared by either of two rf sputtering systems. One system uses three modified Varian S-guns capable of sputtering various metal powder targets; the other uses reactive rf magnetron sputtering from a single mixed-oxide stoichiometric solid target. Film thickness was typically in the range 2000–5000 A. Substrates of magnesium oxide, zirconia-buffered silicon, and strontium titanate have been used. Ion implantation was carried out using a metal vapor vacuum arc (MEVVA) high current metal ion source. Beam energy was 100–200 keV, average beam current about 1 mA, and dose up to about 1017 ions/cm2. Samples were annealed at 800 – 900°C in wet oxygen. Film composition was determined using Rutherford Backscattering Spectrometry (RBS), and the resistivity versus temperature curves were obtained using a four-point probe method. We find that the zero-resistance temperature can be greatly increased after implantation and reannealing, and that the ion beam modification technique described here provides a powerful means for optimizing the thin film superconducting properties.

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Formation of Buried Iridium Silicide Layer in Silicon by High Dose Iridium Ion Implantation

MRS Proceedings ◽

10.1557/proc-147-229 ◽

1989 ◽

Vol 147 ◽

Cited By ~ 2

Author(s):

K. M. Yu ◽

B. Katz ◽

I. C. Wu ◽

I. G. Brown

Keyword(s):

Ion Implantation ◽

Metal Ion ◽

Room Temperature ◽

Metal Vapor ◽

Ion Source ◽

Vacuum Arc ◽

High Dose ◽

High Current ◽

Interface Morphology ◽

Silicide Layer

AbstractWe have investigated the formation of IrSi3 layers buried in <111> silicon. The layers are formed by iridium ion implantation using a metal vapor vacuum arc (MEVVA) high current metal ion source at room temperature with average beam energy = 130 keV. Doses of the Ir ions ranging from 2×1016 to 1.5×1017/cm2 were implanted into <111> Si. The formation of IrSi3 phase is realized after annealing at temperatures as low as 500°C. A continuous IrSi3 layer of =200 Å thick buried under =400 Å Si was achieved with samples implanted with doses not less than 3.5×1016/cm2. Implantated doses above 8×1016/cm2 resulted in the formation of an IrSi3 layer on the surface due to excessive sputtering of Si by the TI ions. The effects of implant dose on phase formation, interface morphology and implanted atom redistribution are discussed. Radiation damage and regrowth of Si due to the implantation process was also studied.

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Pattern Evolution of NiSi2 on Si Surface upon High Current Pulsed Ni Ion Implantation

MRS Proceedings ◽

10.1557/proc-648-p11.29 ◽

2000 ◽

Vol 648 ◽

Author(s):

X.Q. Cheng ◽

H.N. Zhu ◽

B.X. Liu

Keyword(s):

Ion Implantation ◽

Ion Beam ◽

Fractal Dimensions ◽

Metal Vapor ◽

Ion Source ◽

Vacuum Arc ◽

High Current ◽

Si Substrate ◽

Kinetics Of ◽

Si Wafer

AbstractFractal pattern evolution of NiSi2 grains on a Si surface was induced by high current pulsed Ni ion implantation into Si wafer using metal vapor vacuum arc ion source. The fractal dimension of the patterns was found to correlate with the temperature rise of the Si substrate caused by the implanting Ni ion beam. With increasing of the substrate temperature, the fractal dimensions were determined to increase from less than 1.64, to beyond the percolation threshold of 1.88, and eventually up to 2.0, corresponding to a uniform layer with fine NiSi2 grains. The growth kinetics of the observed surface fractals was also discussed in terms of a special launching mechanism of the pulsed Ni ion beam into the Si substrate.

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Synergistic Effects Under Ion-Beam Modification of Metals

EPJ Web of Conferences ◽

10.1051/epjconf/202124804006 ◽

2021 ◽

Vol 248 ◽

pp. 04006

Author(s):

Anatoly Borisov ◽

Boris Krit ◽

Igor Suminov ◽

Mikhail Ovchinnikov ◽

Sergey Tikhonov

Keyword(s):

Mechanical Properties ◽

Ion Implantation ◽

Synergistic Effects ◽

Ion Beam ◽

Physical And Mechanical Properties ◽

Ion Source ◽

Laser Beams ◽

Vacuum Arc ◽

Thermal Hardening ◽

Ion Beam Modification

The combined effect of ion and laser beams on physical and mechanical properties of metal and alloy surfaces has been studied. The technique of determining the main parameters of polyenergetic ion implantation using a vacuum-arc ion source is proposed and evaluated. It is found that treatment with titanium ions and the subsequent laser thermal hardening increase microhardness of steel 45 and U8 up to 6 times.

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The influence of nanostructure formation on properties for Cr implanted PET

MRS Proceedings ◽

10.1557/proc-665-c8.25 ◽

2001 ◽

Vol 665 ◽

Author(s):

Wu Yuguang ◽

Zhang Tonghe ◽

Zhang Huixing ◽

Zhang Xiaoji ◽

Cui Ping ◽

...

Keyword(s):

Wear Resistance ◽

Ion Implantation ◽

Metal Ion ◽

Ion Beam ◽

Dose Range ◽

Surface Hardness ◽

Metal Vapor ◽

Vacuum Arc ◽

Ion Beam Modification ◽

Ion Implanted

ABSTRACTPolyethylene terephthalate (PET) has been modified by Cr ion implantation with a dose range from 1×1016to 2×1017ions /cm2 using a metal vapor vacuum arc MEVVA source. The surface morphology was observed by atomic force microscopy (AFM). The Cr atom precipitation was found. The changes of the structure and composition have been observed with transmission electron microscope (TEM). The TEM photos revealed the presence of Cr nano-meter particles on the implanted PET. It is believed that the change would cause the improvement of the conductive properties and wear resistance. The electrical properties of PET have been improved after metal ion implantation. The resistivity of Cr ion implanted PET decreased obviously with an increase of ion dose. When the metal ion dose with 2×1017cm−2 was implanted into PET, the resistivity of PET could be less than 0.1 Ωm. But when Si or C ions with same dose are implanted PET, the resistivity of PET would be up to several Ωm. The result show that the resistivity of Cr ion implanted sample is obviously lower than that of Si- and C-implanted one. After Cr implantation, the surface hardness and modulus could be increased. The property of the implanted PET has modified greatly. The hardness and modulus of Cr implanted PET with dose of 2×1017/cm2 is 9.5 and 3.1 times greater than that of pristine PET. So we can see that wear resistance improved greatly. The Cr ion beam modification mechanism of PET will be discussed.

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The 100‐kV gas and metal ion source for high current ion implantation

Review of Scientific Instruments ◽

10.1063/1.1143827 ◽

1992 ◽

Vol 63 (4) ◽

pp. 2422-2424 ◽

Cited By ~ 42

Author(s):

S. P. Bugaev ◽

A. G. Nikolaev ◽

E. M. Oks ◽

P. M. Schanin ◽

G. Yu. Yushkov

Keyword(s):

Ion Implantation ◽

Metal Ion ◽

Ion Source ◽

High Current

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Formation of Buried Epitaxial Si-Ge Alloy Layers in Si Crystal by High Dose Ge ION Implantation

MRS Proceedings ◽

10.1557/proc-235-293 ◽

1991 ◽

Vol 235 ◽

Cited By ~ 9

Author(s):

Kin Man Yu ◽

Ian G. Brown ◽

Seongil Im

Keyword(s):

Ion Implantation ◽

Single Crystal ◽

Lattice Mismatch ◽

Solid Phase ◽

Metal Vapor ◽

Ion Source ◽

Vacuum Arc ◽

High Dose ◽

Solid Phase Epitaxy ◽

Ion Channeling

ABSTRACTWe have synthesized single crystal Si1−xGex alloy layers in Si <100> crystals by high dose Ge ion implantation and solid phase epitaxy. The implantation was performed using the metal vapor vacuum arc (Mevva) ion source. Ge ions at mean energies of 70 and 100 keV and with doses ranging from 1×1016 to to 7×1016 ions/cm2 were implanted into Si <100> crystals at room temperature, resulting in the formation of Si1−xGex alloy layers with peak Ge concentrations of 4 to 13 atomic %. Epitaxial regrowth of the amorphous layers was initiated by thermal annealing at temperatures higher than 500°C. The solid phase epitaxy process, the crystal quality, microstructures, interface morphology and defect structures were characterized by ion channeling and transmission electron microscopy. Compositionally graded single crystal Si1−xGex layers with full width at half maximum ∼100nm were formed under a ∼30nm Si layer after annealing at 600°C for 15 min. A high density of defects was found in the layers as well as in the substrate Si just below the original amorphous/crystalline interface. The concentration of these defects was significantly reduced after annealing at 900°C. The kinetics of the regrowth process, the crystalline quality of the alloy layers, the annealing characteristics of the defects, and the strains due to the lattice mismatch between the alloy and the substrate are discussed.

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Extraction of high current Cr ion beam from a multicusp metal ion source

Review of Scientific Instruments ◽

10.1063/1.1145030 ◽

1994 ◽

Vol 65 (4) ◽

pp. 1269-1271

Author(s):

Takatoshi Yamashita ◽

Yutaka Inouchi ◽

Shuichi Fujiwara ◽

Yasuhiro Matsuda ◽

Hiroshi Inami ◽

...

Keyword(s):

Metal Ion ◽

Ion Beam ◽

Ion Source ◽

High Current

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Development of a new high-current triode extraction system for helicon ion source: design and simulation

Laser and Particle Beams ◽

10.1017/s0263034618000526 ◽

2018 ◽

Vol 36 (4) ◽

pp. 477-486 ◽

Cited By ~ 2

Author(s):

M. Khoshhal ◽

M. Habibi ◽

Rod W. Boswell

Keyword(s):

Ion Implantation ◽

Ion Beam ◽

Ion Source ◽

High Current ◽

Ion Temperature ◽

Beam Emittance ◽

Extraction Voltage ◽

Parabolic Geometry ◽

First Time ◽

Plasma Electrode

AbstractThree triode extraction systems are simulated by IBSimu ion optical code for Amirkabir Helicon Ion Source (AHIS). The optimized pierce and suggested parabolic electrodes are introduced for the first time in this paper. The obtained N+ beam for parabolic geometry designed for ion implantation has 66 keV energy, and 10.4 mA current. Ion beam emittance and Twiss parameters of the emittance ellipse as the function of x term index are calculated for parabolic electrode equation. The simulated triode extraction systems have been evaluated by using of optimized parameters such as the extraction voltage, gap distance, plasma electrode (PE) aperture, and ion temperature. The extraction voltage, gap distance, PE aperture, and ion temperature have been changed in the range of 58–70 kV, 35–39 mm, 4–6 mm, and 0.5–4.4 eV in the simulations, respectively.

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