Effective Application of Turbulent Heating to High Density Tokamak Plasma

1983 ◽  
Vol 22 (Part 1, No. 12) ◽  
pp. 1910-1914
Author(s):  
Takechiyo Watanabe ◽  
Akihiro Nagao ◽  
Yukio Nakamura ◽  
Satoshi Itoh
Keyword(s):  
High Density ◽  
Tokamak Plasma ◽  
Effective Application ◽  
Turbulent Heating

Compatibility of advanced tokamak plasma with high density and high radiation loss operation in JT-60U

2005 ◽  
Vol 45 (12) ◽  
pp. 1618-1627 ◽  
Author(s):  
H Takenaga ◽  
N Asakura ◽  
H Kubo ◽  
S Higashijima ◽  
S Konoshima ◽  
...  
Keyword(s):  
High Density ◽  
Radiation Loss ◽  
Tokamak Plasma ◽  
High Radiation

scholarly journals Роль электрического поля в формировании режима отрыва плазмы токамака

2018 ◽  
Vol 44 (6) ◽  
pp. 66
Author(s):  
И.Ю. Сениченков ◽  
Е.Г. Кавеева ◽  
В.А. Рожанский ◽  
Е.А. Сытова ◽  
И.Ю. Веселова ◽  
...  
Keyword(s):  
Magnetic Flux ◽  
High Field ◽  
Cold Plasma ◽  
High Density ◽  
Numerical Code ◽  
Tokamak Plasma ◽  
Plasma Region ◽  
Confinement Region ◽  
Self Consistent ◽  
Plasma Perturbation

AbstractModeling of the transition to the detachment of ASDEX Upgrade tokamak plasma with increasing density is performed using the SOLPS-ITER numerical code with a self-consistent account of drifts and currents. Their role in plasma redistribution both in the confinement region and in the scrape-off layer (SOL) is investigated. The mechanism of high field side high-density formation in the SOL in the course of detachment is suggested. In the full detachment regime, when the cold plasma region expands above the X -point and reaches closed magnetic-flux surfaces, plasma perturbation in a confined region may lead to a change in the confinement regime.

Trapped Electron Effect on Turbulent Heating by Low Pulsed Electric Field in Tokamak Plasma

1984 ◽  
Vol 23 (Part 1, No. 4) ◽  
pp. 453-459
Author(s):  
Takechiyo Watanabe ◽  
Akihiro Nagao ◽  
Yukio Nakamura ◽  
Satoshi Itoh
Keyword(s):  
Electric Field ◽  
Pulsed Electric Field ◽  
Tokamak Plasma ◽  
Electron Effect ◽  
Turbulent Heating ◽  
Trapped Electron

Rapid current-penetration in turbulent heating of a high-density plasma

1978 ◽  
Vol 66 (1) ◽  
pp. 34-36 ◽  
Author(s):  
H. Iguchi ◽  
Y. Ito ◽  
T. Kawabe ◽  
K. Muraoka
Keyword(s):  
High Density ◽  
Turbulent Heating ◽  
Rapid Current ◽  
Density Plasma

Planar defects in ordered (Ga,In)P

1988 ◽  
Vol 46 ◽  
pp. 902-903
Author(s):  
S. McKernan ◽  
C. B. Carter ◽  
D. Bour ◽  
J. R. Shealy
Keyword(s):  
Electron Diffraction ◽  
Vapor Phase ◽  
Growth Direction ◽  
High Density ◽  
Ordered Structure ◽  
Planar Defects ◽  
Diffraction Patterns ◽  
Ternary Semiconductors ◽  
Anion Species ◽  
Metallic Vapor

The growth of ternary III-V semiconductors by organo-metallic vapor phase epitaxy (OMVPE) is widely practiced. It has been generally assumed that the resulting structure is the same as that of the corresponding binary semiconductors, but with the two different cation or anion species randomly distributed on their appropriate sublattice sites. Recently several different ternary semiconductors including AlxGa1-xAs, Gaxln-1-xAs and Gaxln1-xP1-6 have been observed in ordered states. A common feature of these ordered compounds is that they contain a relatively high density of defects. This is evident in electron diffraction patterns from these materials where streaks, which are typically parallel to the growth direction, are associated with the extra reflections arising from the ordering. However, where the (Ga,ln)P epilayer is reasonably well ordered the streaking is extremely faint, and the intensity of the ordered spot at 1/2(111) is much greater than that at 1/2(111). In these cases it is possible to image relatively clearly many of the defects found in the ordered structure.

Quantitative defect studies in semiconductor TEM samples prepared by low angle ion milling

1995 ◽  
Vol 53 ◽  
pp. 512-513
Author(s):  
L. Mulestagno ◽  
J.C. Holzer ◽  
P. Fraundorf
Keyword(s):  
Sample Preparation ◽  
Milling Time ◽  
High Density ◽  
Low Density ◽  
Ion Milling ◽  
High Quality ◽  
Variable Angle ◽  
Major Disadvantage ◽  
Induced Defects

Due to the wealth of information, both analytical and structural that can be obtained from it TEM always has been a favorite tool for the analysis of process-induced defects in semiconductor wafers. The only major disadvantage has always been, that the volume under study in the TEM is relatively small, making it difficult to locate low density defects, and sample preparation is a somewhat lengthy procedure. This problem has been somewhat alleviated by the availability of efficient low angle milling.Using a PIPS® variable angle ion -mill, manufactured by Gatan, we have been consistently obtaining planar specimens with a high quality thin area in excess of 5 × 104 μm2 in about half an hour (milling time), which has made it possible to locate defects at lower densities, or, for defects of relatively high density, obtain information which is statistically more significant (table 1).

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