Influence of Low-Energy Atomic Hydrogen on Argon-Implanted Silicon Schottky Barriers

1985 ◽  
Vol 24 (Part 2, No. 7) ◽  
pp. L533-L535 ◽  
Author(s):  
S. Ashok ◽  
K. Giewont
1986 ◽  
Vol 76 ◽  
Author(s):  
H.-C. Chien ◽  
S. Ashok ◽  
J. H. Slowik

ABSTRACTAl/p-Si Schottky barriers formed on wafers implanted with 10–20 keV Ar exhibit low-temperature electrical properties characteristic of grain boun1dary transport Subsequent low-energy (0.4 keV), high fluence ( ∼ IOE18 cm−2) H implant is found to passivate the grain boundaries of the Ar implant-induced microcrystals. Extremely high Al/p-Si Schottky barrier heights are obtained following the dual implants, and deep level transient spectroscopy (DLTS) measurements reveal that H also alters the properties of traps introduced by the Ar implant, thus improving the diode characteristics.


2020 ◽  
Vol 29 (1) ◽  
pp. 015005
Author(s):  
Yuji Shimabukuro ◽  
Hidenori Takahashi ◽  
Shinichi Iwamoto ◽  
Koichi Tanaka ◽  
Motoi Wada

2005 ◽  
Vol 71 (4) ◽  
Author(s):  
C. C. Havener ◽  
R. Rejoub ◽  
P. S. Krstić ◽  
A. C. H. Smith

2000 ◽  
Vol 445 (2-3) ◽  
pp. 139-150 ◽  
Author(s):  
C Su ◽  
C.-S Tsai ◽  
C.-E Lin ◽  
K.-H Chen ◽  
J.-K Wang ◽  
...  

2004 ◽  
Vol 69 (2) ◽  
Author(s):  
J. G. Childers ◽  
K. E. James ◽  
Igor Bray ◽  
M. Baertschy ◽  
M. A. Khakoo

1994 ◽  
Vol 49 (1) ◽  
pp. 255-264 ◽  
Author(s):  
M. A. Huels ◽  
J. A. Fedchak ◽  
R. L. Champion ◽  
L. D. Doverspike ◽  
J. P. Gauyacq ◽  
...  

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