Buried Heterostructure GaAs/GaAlAs Distributed Bragg Reflector Surface Emitting Laser with Very Low Threshold (5.2 mA) under Room Temperature CW Conditions
1989 ◽
Vol 28
(Part 2, No. 4)
◽
pp. L667-L668
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2009 ◽
Vol 41
(11-13)
◽
pp. 873-882
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1993 ◽
Vol 5
(7)
◽
pp. 744-746
◽
Keyword(s):