Atomic Layer Etching of Silicon by Thermal Desorption Method

1995 ◽  
Vol 34 (Part 1, No. 9A) ◽  
pp. 5049-5053 ◽  
Author(s):  
Shigeru Imai ◽  
Takeo Haga ◽  
Osamu Matsuzaki ◽  
Takeo Hattori ◽  
Masakiyo Matsumura
Keyword(s):  
Thermal Desorption ◽  
Atomic Layer ◽  
Atomic Layer Etching ◽  
Desorption Method

Damaged silicon contact layer removal using atomic layer etching for deep-nanoscale semiconductor devices

2013 ◽  
Vol 31 (6) ◽  
pp. 061310 ◽  
Author(s):  
Jong Kyu Kim ◽  
Sung Il Cho ◽  
Sung Ho Lee ◽  
Chan Kyu Kim ◽  
Kyung Suk Min ◽  
...  
Keyword(s):  
Semiconductor Devices ◽  
Atomic Layer ◽  
Contact Layer ◽  
Layer Removal ◽  
Atomic Layer Etching

Understanding time-resolved processes in atomic-layer etching of ultra-thin Al2O3 film using BCl3 and Ar neutral beam

2014 ◽  
Vol 105 (9) ◽  
pp. 093104 ◽  
Author(s):  
Young I. Jhon ◽  
Kyung S. Min ◽  
G. Y. Yeom ◽  
Young Min Jhon
Keyword(s):  
Atomic Layer ◽  
Neutral Beam ◽  
Al2o3 Film ◽  
Time Resolved ◽  
Atomic Layer Etching

(Invited) Volatile Products during Thermal Atomic Layer Etching of Metal Oxides and Elemental Metals

2021 ◽  
Vol MA2021-01 (21) ◽  
pp. 844-844
Author(s):  
Ann Lii-Rosales ◽  
Virginia Johnson ◽  
Sandeep Sharma ◽  
Andrew S Cavanagh ◽  
Steven M George
Keyword(s):  
Metal Oxides ◽  
Atomic Layer ◽  
Volatile Products ◽  
Atomic Layer Etching

Prediction and Validation of the Process Window for Atomic Layer Etching: HF Exposure on TiO2

2021 ◽  
Author(s):  
Suresh Kondati Natarajan ◽  
Austin M. Cano ◽  
Jonathan L. Partridge ◽  
Steven M. George ◽  
Simon D. Elliott
Keyword(s):  
Atomic Layer ◽  
Process Window ◽  
Atomic Layer Etching

scholarly journals Predicting synergy in atomic layer etching

2017 ◽  
Vol 35 (5) ◽  
pp. 05C302 ◽  
Author(s):  
Keren J. Kanarik ◽  
Samantha Tan ◽  
Wenbing Yang ◽  
Taeseung Kim ◽  
Thorsten Lill ◽  
...  
Keyword(s):  
Atomic Layer ◽  
Atomic Layer Etching

scholarly journals Sequential extraction and thermal desorption of mercury from contaminated soil and tailings from Mongolia

2012 ◽  
Vol 10 (5) ◽  
pp. 1565-1573 ◽  
Author(s):  
Pavel Coufalík ◽  
Pavel Krásenský ◽  
Marek Dosbaba ◽  
Josef Komárek
Keyword(s):  
Sequential Extraction ◽  
Thermal Desorption ◽  
Solid Phase ◽  
Extraction Procedure ◽  
Speciation Analysis ◽  
Water Soluble ◽  
Mercury Species ◽  
Different Temperatures ◽  
Acidic Conditions ◽  
Desorption Method

AbstractMercury forms in contaminated environmental samples were studied by means of sequential extraction and thermal desorption from the solid phase. The sequential extraction procedure involved the following fractions: water soluble mercury, mercury extracted in acidic conditions, mercury bound to humic substances, elemental Hg and mercury bound to complexes, HgS, and residual mercury. In addition to sequential extraction, the distribution of mercury species as a function of soil particles size was studied. The thermal desorption method is based on the thermal decomposition or desorption of Hg compounds at different temperatures. The following four species were observed: Hg0, HgCl2, HgS and Hg(II) bound to humic acids. The Hg release curves from artificial soils and real samples were obtained and their applicability to the speciation analysis was considered.

Thermal Atomic Layer Etching of Silicon Using O2, HF, and Al(CH3)3 as the Reactants

2018 ◽  
Vol 30 (23) ◽  
pp. 8465-8475 ◽  
Author(s):  
Aziz I. Abdulagatov ◽  
Steven M. George
Keyword(s):  
Atomic Layer ◽  
Atomic Layer Etching
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