Ultra High Vacuum Reflection Electron Microscopy Study of Step-Dislocation Interaction on Si(111) Surface

1995 ◽  
Vol 34 (Part 1, No. 10) ◽  
pp. 5768-5773 ◽  
Author(s):  
Alexander Latyshev ◽  
Hiroki Minoda ◽  
Yasumasa Tanishiro ◽  
Katsumichi Yagi
Keyword(s):  
Electron Microscopy ◽  
High Vacuum ◽  
Microscopy Study ◽  
Electron Microscopy Study ◽  
Ultra High Vacuum ◽  
Dislocation Interaction ◽  
Reflection Electron Microscopy

UHV Electron Microscopy study of in situ annealed (100) surfaces of MgO

1991 ◽  
Vol 49 ◽  
pp. 624-625
Author(s):  
M. Gajdardziska-Josifovska ◽  
M. R. McCartney ◽  
J. M. Cowley
Keyword(s):  
Electron Microscopy ◽  
Surface Characterization ◽  
High Vacuum ◽  
Microscopy Study ◽  
Electron Microscopy Study ◽  
Ultra High Vacuum ◽  
Frequent Use ◽  
Reflection Electron Microscopy ◽  
Catalyst Systems

The (100) surface of magnesium oxide is of considerable interest because of its frequent use as substrate for epitaxial growth of metal films, high Tc superconductors and model catalyst systems. A large number of surface characterization techniques have been used to determine the atomic structure of the cleaved (100) surface. Clean surfaces have been produced either by cleaving MgO crystals in-situ under ultra-high vacuum (UHV) conditions, or more frequently, by cleaving in air and subsequent annealing in UHV. A wide variety of annealing temperatures and times have been used by different researchers, the upper limit on the temperature being set at ≈900°C to avoid segregation of Ca to the surface. Calcium is the main impurity in even the purest MgO crystals and a few studies have dealt with the structure of the Ca-rich (100) surface of MgO. All of the existing studies have used diffraction and spectroscopy techniques without imaging of the surface. It is the purpose of this work to study the topography of the UHV-annealed (100) surface by reflection electron microscopy (REM).

A High Voltage Electron Microscopy Study of Sub-Oxide Formation in Vanadium

1971 ◽  
Vol 29 ◽  
pp. 212-213
Author(s):  
R. H. Geiss ◽  
R. L. Ladd ◽  
K. R. Lawless
Keyword(s):  
High Vacuum ◽  
Microscopy Study ◽  
Electron Microscopy Study ◽  
Ultra High Vacuum ◽  
Pure Oxygen ◽  
Pressure Oxidation ◽  
High Voltage Electron Microscopy ◽  
Oxidation Study ◽  
Voltage Electron ◽  
Good Agreement

Detailed electron microscope and diffraction studies of the sub-oxides of vanadium have been reported by Cambini and co-workers, and an oxidation study, possibly complicated by carbon and/or nitrogen, has been published by Edington and Smallman. The results reported by these different authors are not in good agreement. For this study, high purity polycrystalline vanadium samples were electrochemically thinned in a dual jet polisher using a solution of 20% H2SO4, 80% CH3OH, and then oxidized in an ion-pumped ultra-high vacuum reactor system using spectroscopically pure oxygen. Samples were oxidized at 350°C and 100μ oxygen pressure for periods of 30,60,90 and 160 minutes. Since our primary interest is in the mechanism of the low pressure oxidation process, the oxidized samples were cooled rapidly and not homogenized. The specimens were then examined in the HVEM at voltages up to 500 kV, the higher voltages being necessary to examine thick sections for which the oxidation behavior was more characteristic of the bulk.

Scanning Reflection Electron Microscopy of 2x1 Domain Structure of Si(111) Surface

1985 ◽  
Vol 43 ◽  
pp. 264-265
Author(s):  
H.-J. Ou
Keyword(s):  
Electron Microscopy ◽  
Electron Diffraction ◽  
Spatial Resolution ◽  
High Vacuum ◽  
Ultra High Vacuum ◽  
Intermediate Energies ◽  
Good Spatial Resolution ◽  
Probe Size ◽  
Reflection Electron Microscopy ◽  
Better Than

Studies of the surface structure of silicon with good spatial resolution made recently by reflection electron microscopy, (REM) have complemented and greatly extended the earlier studies, made by LEED and other methods, of the formation of surface reconstruction superstructures such a the Si(111) 7x7. These studies have not included the 2x1 superstructure on (111) surfaces formed by cleaving Si crystals in ultra-high vacuum. We have now investigated the form of the domains of this 2x1 structure by use of a reconstructed REMEDIE system 2.3 (for Reflection Electron Microscopy and Electron Diffraction at Intermediate Energies, 1-20keV). This system has shown a spatial resolution of better than 100Å although resolutions of about 300Å may be more common in practise because of the limitations due to probe size, vibration and signal noise.

Reflection Electron Microscopy (REM) of Surface Steps & Dislocations on GaP(110) & GaAs(110)

1982 ◽  
Vol 40 ◽  
pp. 450-451
Author(s):  
Tung Hsu ◽  
Sumio Iijima
Keyword(s):  
Electron Microscopy ◽  
Room Temperature ◽  
High Vacuum ◽  
Ultra High Vacuum ◽  
Heating Stage ◽  
Surface Steps ◽  
Reflection Electron Microscopy ◽  
Electron Microscopes ◽  
High Vacuum Environment

Reflection electron microscopy (REM) in ultra high vacuum environment with heating stage has been reported by Osakabe, et al. In this paper, we present our results in REM imaging of single steps and dislocations using commercial electron microscopes (JEM-100B and Philips-400T) under ordinary pressure (10-7 torr) and room temperature.

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