Role of Interface States in Temperature Dependence of Capacitance in Amorphous Silicon Solar Cells

1995 ◽  
Vol 34 (Part 1, No. 11) ◽  
pp. 6017-6018
Author(s):  
R. V. R. Murthy ◽  
V. Dutta ◽  
S. P. Singh
Keyword(s):  
Solar Cells ◽  
Temperature Dependence ◽  
Amorphous Silicon ◽  
Interface States ◽  
Silicon Solar Cells

scholarly journals The role of oxide interlayers in back reflector configurations for amorphous silicon solar cells

2013 ◽  
Vol 113 (6) ◽  
pp. 064508 ◽  
Author(s):  
V. Demontis ◽  
C. Sanna ◽  
J. Melskens ◽  
R. Santbergen ◽  
A. H. M. Smets ◽  
...  
Keyword(s):  
Solar Cells ◽  
Amorphous Silicon ◽  
Silicon Solar Cells ◽  
Back Reflector

scholarly journals Bandtail Limits to Solar Conversion Efficiencies in Amorphous Silicon Solar Cells

2003 ◽  
Vol 762 ◽  
Author(s):  
K. Zhu ◽  
J. Yang ◽  
W. Wang ◽  
E. A. Schiff ◽  
J. Liang ◽  
...  
Keyword(s):  
Solar Cells ◽  
Temperature Dependence ◽  
Amorphous Silicon ◽  
Power Density ◽  
Open Circuit Voltage ◽  
Open Circuit ◽  
Drift Mobility ◽  
Silicon Solar Cells ◽  
Solar Conversion ◽  
Conversion Efficiencies

AbstractWe describe a model for a-Si:H based pin solar cells derived primarily from valence bandtail properties. We show how hole drift-mobility measurements and measurements of the temperature-dependence of the open-circuit voltage VOC can be used to estimate the parameters, and we present VOC(T) measurements. We compared the power density under solar illumination calculated with this model with published results for as-deposited a-Si:H solar cells. The agreement is within 4% for a range of thicknesses, suggesting that the power from as-deposited cells is close to the bandtail limit.

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