Edge Effects and Scattering in Resonant Tunneling Electron Devices

1996 ◽  
Vol 35 (Part 1, No. 5A) ◽  
pp. 2583-2589 ◽  
Author(s):  
Chomsik Lee
Keyword(s):  
Edge Effects ◽  
Resonant Tunneling ◽  
Tunneling Electron ◽  
Electron Devices

Edge effects in a gated submicron resonant tunneling diode

1992 ◽  
Vol 60 (20) ◽  
pp. 2508-2510 ◽  
Author(s):  
P. H. Beton ◽  
M. W. Dellow ◽  
P. C. Main ◽  
T. J. Foster ◽  
L. Eaves ◽  
...  
Keyword(s):  
Edge Effects ◽  
Resonant Tunneling ◽  
Resonant Tunneling Diode ◽  
Tunneling Diode

scholarly journals Resonant-tunneling electron emitter in an AlN∕GaN system

2005 ◽  
Vol 86 (18) ◽  
pp. 183102 ◽  
Author(s):  
A. Ishida ◽  
Y. Inoue ◽  
H. Fujiyasu
Keyword(s):  
Resonant Tunneling ◽  
Tunneling Electron ◽  
Electron Emitter

scholarly journals There is Plenty of Room for THz Tunneling Electron Devices Beyond the Transit Time Limit

2021 ◽  
pp. 1-1
Author(s):  
Matteo Villani ◽  
Simone Clochiatti ◽  
Werner Prost ◽  
Nils Weimann ◽  
Xavier Oriols
Keyword(s):  
Transit Time ◽  
Time Limit ◽  
Tunneling Electron ◽  
Electron Devices

Resonant tunneling electron injection in quantum cascade laser structures

1998 ◽  
Author(s):  
C. Sirtori ◽  
F. Capasso ◽  
J. Faist ◽  
A.L. Hutchinson ◽  
D.L. Sivco ◽  
...  
Keyword(s):  
Quantum Cascade Laser ◽  
Resonant Tunneling ◽  
Electron Injection ◽  
Tunneling Electron ◽  
Quantum Cascade

The Resonant Tunneling in Si1-xGex/Si Superlattices

2007 ◽  
Vol 121-123 ◽  
pp. 645-648
Author(s):  
Li Ping Xu ◽  
Ting Dun Wen ◽  
Xiao Feng Yang ◽  
Wen Dong Zhang
Keyword(s):  
Transfer Matrix ◽  
Resonant Tunneling ◽  
Tunneling Current ◽  
Barrier Width ◽  
Current Signal ◽  
Piezoresistive Effect ◽  
Peak Region ◽  
Mechanical Signal ◽  
Electron Devices

It has been studied that the dependence of tunneling coefficient T on the ratio x of Ge, on the barrier width B L , on the well width W L and on the periodicity N in periodic superlattices Si1-xGex/Si by the method of transfer matrix, and shown in figures. The dependence of peak region width W on the above parameters are discussed in detail, and plotted, those are fitted in functions. These results may be useful to convert a weak mechanical signal into a strong tunneling current signal and to design electron devices based on meso- piezoresistive effect in the superlattices Si1-xGex/Si.

Resonant tunneling electron beam source using GaAs/AlAs/GaAs field emitter

1997 ◽  
Vol 111 ◽  
pp. 170-173
Author(s):  
T. Ohshima ◽  
T. Mishima ◽  
M. Okamoto ◽  
K. Kuroda
Keyword(s):  
Electron Beam ◽  
Resonant Tunneling ◽  
Beam Source ◽  
Tunneling Electron ◽  
Field Emitter

Applications of Photoelectron Microscopy

1976 ◽  
Vol 34 ◽  
pp. 506-507
Author(s):  
William J. Baxter
Keyword(s):  
Electron Microscopy ◽  
Thermal Decomposition ◽  
Chemical Composition ◽  
Ultraviolet Radiation ◽  
Thin Layer ◽  
Edge Effects ◽  
Electron Optics ◽  
Surface Layers ◽  
Crystalline Orientation ◽  
Fluorescent Screen

In this form of electron microscopy, photoelectrons emitted from a metal by ultraviolet radiation are accelerated and imaged onto a fluorescent screen by conventional electron optics. image contrast is determined by spatial variations in the intensity of the photoemission. The dominant source of contrast is due to changes in the photoelectric work function, between surfaces of different crystalline orientation, or different chemical composition. Topographical variations produce a relatively weak contrast due to shadowing and edge effects.Since the photoelectrons originate from the surface layers (e.g. ∼5-10 nm for metals), photoelectron microscopy is surface sensitive. Thus to see the microstructure of a metal the thin layer (∼3 nm) of surface oxide must be removed, either by ion bombardment or by thermal decomposition in the vacuum of the microscope.

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