The Resonant Tunneling in Si1-xGex/Si Superlattices
2007 ◽
Vol 121-123
◽
pp. 645-648
Keyword(s):
It has been studied that the dependence of tunneling coefficient T on the ratio x of Ge, on the barrier width B L , on the well width W L and on the periodicity N in periodic superlattices Si1-xGex/Si by the method of transfer matrix, and shown in figures. The dependence of peak region width W on the above parameters are discussed in detail, and plotted, those are fitted in functions. These results may be useful to convert a weak mechanical signal into a strong tunneling current signal and to design electron devices based on meso- piezoresistive effect in the superlattices Si1-xGex/Si.
2007 ◽
Vol 121-123
◽
pp. 619-622
◽
Keyword(s):
1995 ◽
Vol 09
(23)
◽
pp. 3039-3051
2003 ◽
Vol 17
(03)
◽
pp. 105-109
◽
1992 ◽
Vol 06
(13)
◽
pp. 2321-2343
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