The Resonant Tunneling in Si1-xGex/Si Superlattices

2007 ◽  
Vol 121-123 ◽  
pp. 645-648
Author(s):  
Li Ping Xu ◽  
Ting Dun Wen ◽  
Xiao Feng Yang ◽  
Wen Dong Zhang

It has been studied that the dependence of tunneling coefficient T on the ratio x of Ge, on the barrier width B L , on the well width W L and on the periodicity N in periodic superlattices Si1-xGex/Si by the method of transfer matrix, and shown in figures. The dependence of peak region width W on the above parameters are discussed in detail, and plotted, those are fitted in functions. These results may be useful to convert a weak mechanical signal into a strong tunneling current signal and to design electron devices based on meso- piezoresistive effect in the superlattices Si1-xGex/Si.

2007 ◽  
Vol 121-123 ◽  
pp. 619-622 ◽  
Author(s):  
Ting Dun Wen ◽  
Li Ping Xu ◽  
Ji Jun Xiong ◽  
Wen Dong Zhang

Meso- piezoresistive effect is proposed, which is defined as “Strain Tuning of the resonant current”, in order to convert a weak mechanical signal into a strong tunneling current signal. If a mechanical signal is acted on an related mechanical nano-structure, the corresponding strain distribution will be produced in the structure; the built- in electric field will be resulted from the strain in system in some conditions; the strain and built-in electric filed will result in the change of electronic energy states; the change of electronic energy state will influence on the value of the tunneling current. Two experimental units are designed, one being used to detect an acoustic signal under sea, other to detect acceleration.


1986 ◽  
Vol 49 (19) ◽  
pp. 1248-1250 ◽  
Author(s):  
Hiroaki Ohnishi ◽  
Tsuguo Inata ◽  
Shunichi Muto ◽  
Naoki Yokoyama ◽  
Akihiko Shibatomi

2018 ◽  
Vol 112 (3) ◽  
pp. 033508 ◽  
Author(s):  
Tyler A. Growden ◽  
Weidong Zhang ◽  
Elliott R. Brown ◽  
David F. Storm ◽  
Katurah Hansen ◽  
...  

1995 ◽  
Vol 09 (23) ◽  
pp. 3039-3051
Author(s):  
DILIP K. ROY ◽  
AJIT SINGH

The principles of operation of a double barrier resonant tunneling diode (DBRTD) giving rise to negative differential conductivity effect are first reviewed. Next, the physics of resonant tunneling based on (i) the time-independent conventional approach and (ii) the time-dependent quantum measurement approach, as applied to a DBRTD, is discussed. Expressions for the resonant tunneling current densities through the barriers are then derived on the ideas of quantum measurement. Through the well the current, however, flows by the conventional mechanism. The three current density magnitudes are found to be identical under resonant conditions. Finally, an expression for the resonant tunneling current density due to a group of incident electrons is derived.


2003 ◽  
Vol 17 (03) ◽  
pp. 105-109 ◽  
Author(s):  
MASATO OHMUKAI

Numerical calculations by a transfer matrix method have been performed to obtain the transmission coefficient of rectangular double barrier structures. The dependence of the well width, barrier width and the barrier height was systematically investigated. When the width ratio of the two barriers was varied on condition that a total width was fixed, the transmission coefficient at a resonance is varied while that at a valley region is not. It is concluded that the resonant tunneling is characterized by two parameters: total width and the width ratio. Our results clarify the transition of transmission spectrum from a single barrier to a double barrier structure.


1992 ◽  
Vol 06 (13) ◽  
pp. 2321-2343 ◽  
Author(s):  
V.J. GOLDMAN ◽  
BO SU ◽  
J.E. CUNNINGHAM

We review experimental study of charge transport in nanometer double-barrier resonant tunneling devices. Heterostructure material is asymmetric: one barrier is substantially less transparent than the other. Resonant tunneling through size-quantized well states and single-electron charging of the well are thus largely separated in the two bias polarities. When the emitter barrier is more transparent than the collector barrier, electrons accumulate in the well; incremental electron occupation of the well is accompanied by Coulomb blockade leading to sharp steps of the tunneling current. When the emitter barrier is less transparent, the current reflects resonant tunneling of just one electron at a time through size-quantized well states; the current peaks and/or steps (depending on experimental parameters) appear in current-voltage characteristics. Magnetic field and temperature effects are also reviewed. Good agreement is achieved in comparison of many features of experimental data with simple theoretical models.


1997 ◽  
Vol 81 (10) ◽  
pp. 7070-7072 ◽  
Author(s):  
Gyungock Kim ◽  
Dong-Wan Roh ◽  
Seung Won Paek

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