Mercury-Sensitized Hydrogen Radical Photoetching of Hydrogenated Amorphous Silicon

1996 ◽  
Vol 35 (Part 2, No. 12A) ◽  
pp. L1547-L1549
Author(s):  
Masato Hiramatsu ◽  
Yoshito Kawakyu
Keyword(s):  
Amorphous Silicon ◽  
Hydrogenated Amorphous Silicon ◽  
Hydrogen Radical ◽  
Hydrogenated Amorphous

Separation of Nucleation and Growth Processes of Nanocrystalline Silicon by Hydrogen Radical Treatment of Hydrogenated Amorphous Silicon

1992 ◽  
Vol 283 ◽  
Author(s):  
Masanori Otobe ◽  
Shunri Oda
Keyword(s):  
Amorphous Silicon ◽  
Hydrogen Diffusion ◽  
Hydrogenated Amorphous Silicon ◽  
Nanocrystalline Silicon ◽  
Nucleation And Growth ◽  
Growth Processes ◽  
Plan View ◽  
Hydrogen Radical ◽  
Hydrogen Radicals ◽  
Hydrogenated Amorphous

ABSTRACTWe have investigated nucleation and growth mechanism of nanocrystalline silicon (nc-Si) based on the experimental observation of plan-view transmission electron microscopy. Nanocrystalline Si has been prepared by hydrogen radical annealing of hydrogenated amorphous silicon (a-Si:H) layer, which is deposited on hydrogen radical treated a-Si:H buffer layer. Nanocrystallization depends critically upon hydrogen radical annealing time and the thickness ofa-Si:H layer. Hydrogen radicals play important roles in both nucleation and growth processes in a different way. Growth of nc-Si can be explained by “hydrogen diffusion model”, in which hydrogen radicals diffusing through a-Si:H layer to interface cause nanocrystallization. Our results imply that nuclei for nc-Si are generated at the interface between a-Si:H and under layer when treated by hydrogen radicals.

Effect of annealing and hydrogen radical treatment on the structure of solution-processed hydrogenated amorphous silicon films

2014 ◽  
Vol 53 (4S) ◽  
pp. 04ER07
Author(s):  
Yoo Sakuma ◽  
Keisuke Ohdaira ◽  
Takashi Masuda ◽  
Hideyuki Takagishi ◽  
Zhongrong Shen ◽  
...  
Keyword(s):  
Amorphous Silicon ◽  
Hydrogenated Amorphous Silicon ◽  
Silicon Films ◽  
Solution Processed ◽  
Radical Treatment ◽  
Hydrogen Radical ◽  
Hydrogenated Amorphous

BONDING IN HYDROGENATED AMORPHOUS SILICON

1981 ◽  
Vol 42 (C4) ◽  
pp. C4-773-C4-777 ◽  
Author(s):  
H. R. Shanks ◽  
F. R. Jeffrey ◽  
M. E. Lowry
Keyword(s):  
Amorphous Silicon ◽  
Hydrogenated Amorphous Silicon ◽  
Hydrogenated Amorphous

High Rate Deposition of Stable Hydrogenated Amorphous Silicon in Transition from Amorphous to Microcrystalline Silicon

2003 ◽  
Vol 762 ◽  
Author(s):  
Guofu Hou ◽  
Xinhua Geng ◽  
Xiaodan Zhang ◽  
Ying Zhao ◽  
Junming Xue ◽  
...  
Keyword(s):  
Phase Transition ◽  
Amorphous Silicon ◽  
Hydrogenated Amorphous Silicon ◽  
Chemical Vapor ◽  
High Rate ◽  
Very High Frequency ◽  
High Quality ◽  
Working Pressure ◽  
Hydrogen Dilution ◽  
Hydrogenated Amorphous

AbstractHigh rate deposition of high quality and stable hydrogenated amorphous silicon (a-Si:H) films were performed near the threshold of amorphous to microcrystalline phase transition using a very high frequency plasma enhanced chemical vapor deposition (VHF-PECVD) method. The effect of hydrogen dilution on optic-electronic and structural properties of these films was investigated by Fourier-transform infrared (FTIR) spectroscopy, Raman scattering and constant photocurrent method (CPM). Experiment showed that although the phase transition was much influenced by hydrogen dilution, it also strongly depended on substrate temperature, working pressure and plasma power. With optimized condition high quality and high stable a-Si:H films, which exhibit σph/σd of 4.4×106 and deposition rate of 28.8Å/s, have been obtained.

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