Heavily Carbon-Doped P-Type GaAs Grown on GaAs Substrates with Various Orientations by Metalorganic Molecular Beam Epitaxy

1996 ◽  
Vol 35 (Part 2, No. 2B) ◽  
pp. L195-L197 ◽  
Author(s):  
Li-Qi Guo ◽  
Makoto Konagai
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Carbon Doped ◽  
Gaas Substrates ◽  
Metalorganic Molecular Beam Epitaxy ◽  
P Type

P-Type Carbon-Doped InGaAs Grown by Metalorganic Molecular Beam Epitaxy

1991 ◽  
Vol 30 (Part 2, No. 9B) ◽  
pp. L1609-L1611 ◽  
Author(s):  
Jun-ichi Shirakashi ◽  
Takumi Yamada ◽  
Ming Qi ◽  
Shinji Nozaki ◽  
Kiyoshi Takahashi ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Carbon Doped ◽  
Metalorganic Molecular Beam Epitaxy ◽  
P Type

Heavily Carbon-Doped P-Type InGaAs Grown by Metalorganic Molecular Beam Epitaxy

1991 ◽  
Vol 30 (Part 2, No. 5A) ◽  
pp. L875-L875 ◽  
Author(s):  
Takeshi Akatsuka ◽  
Ryuji Miyake ◽  
Shinji Nozaki ◽  
Takumi Yamada ◽  
Makoto Konagai ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Carbon Doped ◽  
Metalorganic Molecular Beam Epitaxy ◽  
P Type

Heavily Carbon-Doped P-Type InGaAs Grown by Metalorganic Molecular Beam Epitaxy

1990 ◽  
Vol 29 (Part 2, No. 4) ◽  
pp. L537-L539 ◽  
Author(s):  
Takeshi Akatsuka ◽  
Ryuji Miyake ◽  
Shinji Nozaki ◽  
Takumi Yamada ◽  
Makoto Konagai ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Carbon Doped ◽  
Metalorganic Molecular Beam Epitaxy ◽  
P Type

Heavily carbon doped p-type GaAs and GaAlAs grown by metalorganic molecular beam epitaxy

1989 ◽  
Vol 95 (1-4) ◽  
pp. 145-149 ◽  
Author(s):  
Takumi Yamada ◽  
Eisuke Tokumitsu ◽  
Koki Saito ◽  
Takeshi Akatsuka ◽  
Motoya Miyauchi ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Carbon Doped ◽  
Metalorganic Molecular Beam Epitaxy ◽  
P Type

Heavily carbon-doped p-type (In)GaAs grown by gas-source molecular beam epitaxy using diiodomethane

1995 ◽  
Vol 150 ◽  
pp. 221-226
Author(s):  
T. Tomioka ◽  
N. Okamoto ◽  
H. Ando ◽  
S. Yamaura ◽  
T. Fujii
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Carbon Doped ◽  
Gas Source ◽  
P Type

High Gain and High Sensitive Blue-Ultraviolet Avalanche Photodiodes (APDs) of ZnSSe n+-i-p Structure Molecular Beam Epitaxy (MBE) Grown on p-type GaAs Substrates

2005 ◽  
Vol 44 (No. 17) ◽  
pp. L508-L510 ◽  
Author(s):  
Tomoki Abe ◽  
Koshi Ando ◽  
Katsushi Ikumi ◽  
Hiroyasu Maeta ◽  
Junji Naruse ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Avalanche Photodiodes ◽  
High Gain ◽  
Gaas Substrates ◽  
P Type

p-type conductivity control of ZnSe with insertion of ZnTe:Li submonolayers in metalorganic molecular-beam epitaxy

1998 ◽  
Vol 84 (11) ◽  
pp. 6100-6104 ◽  
Author(s):  
J. Hirose ◽  
K. Uesugi ◽  
M. Hoshiyama ◽  
T. Numai ◽  
I. Suemune ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Type Conductivity ◽  
Metalorganic Molecular Beam Epitaxy ◽  
P Type

p‐type doping of InP and Ga0.47In0.53As using diethylzinc during metalorganic molecular beam epitaxy

1991 ◽  
Vol 58 (21) ◽  
pp. 2378-2380 ◽  
Author(s):  
R. A. Hamm ◽  
D. Ritter ◽  
H. Temkin ◽  
M. B. Panish ◽  
M. Geva
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Metalorganic Molecular Beam Epitaxy ◽  
P Type

New blue-ultraviolet PIN photodiodes of II-VI widegap compounds ZnSSe using p-type GaAs substrates grown by molecular beam epitaxy

2004 ◽  
Vol 1 (4) ◽  
pp. 1054-1057 ◽  
Author(s):  
T. Abe ◽  
H. Maeta ◽  
J. Naruse ◽  
K. Ikumi ◽  
T. Kubota ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Gaas Substrates ◽  
P Type ◽  
Pin Photodiodes
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