New blue-ultraviolet PIN photodiodes of II-VI widegap compounds ZnSSe using p-type GaAs substrates grown by molecular beam epitaxy

2004 ◽  
Vol 1 (4) ◽  
pp. 1054-1057 ◽  
Author(s):  
T. Abe ◽  
H. Maeta ◽  
J. Naruse ◽  
K. Ikumi ◽  
T. Kubota ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Gaas Substrates ◽  
P Type ◽  
Pin Photodiodes

High Gain and High Sensitive Blue-Ultraviolet Avalanche Photodiodes (APDs) of ZnSSe n+-i-p Structure Molecular Beam Epitaxy (MBE) Grown on p-type GaAs Substrates

2005 ◽  
Vol 44 (No. 17) ◽  
pp. L508-L510 ◽  
Author(s):  
Tomoki Abe ◽  
Koshi Ando ◽  
Katsushi Ikumi ◽  
Hiroyasu Maeta ◽  
Junji Naruse ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Avalanche Photodiodes ◽  
High Gain ◽  
Gaas Substrates ◽  
P Type

Titanium/Gold Schottky Contacts on P-Type GaAs Grown on (111)A and (100) GaAs Substrates Using Molecular Beam Epitaxy

1992 ◽  
Vol 31 (Part 2, No. 7B) ◽  
pp. L924-L927 ◽  
Author(s):  
David R. Lovell ◽  
Teiji Yamamoto ◽  
Makoto Inai ◽  
Toshihiko Takebe ◽  
Kikuo Kobayashi
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Schottky Contacts ◽  
Gaas Substrates ◽  
P Type

Molecular beam epitaxy of p-type ZnSTe:N and p-n-junction light emitting diodes

2014 ◽  
Vol 11 (7-8) ◽  
pp. 1282-1285 ◽  
Author(s):  
Kunio Ichino ◽  
Takahiro Kojima ◽  
Shunsuke Obata ◽  
Takuma Kuroyanagi ◽  
Kenta Kimata ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Light Emitting Diodes ◽  
Light Emitting ◽  
P Type

scholarly journals Comparison of deep level spectra in p-type and n-type GaN grown by molecular beam epitaxy [phys. stat. sol. (b) 244, No. 6, 1867–1871 (2007)]

2007 ◽  
Vol 244 (12) ◽  
pp. 4692-4692
Author(s):  
A. Armstrong ◽  
A. Corrion ◽  
C. Poblenz ◽  
U. K. Mishra ◽  
J. S. Speck ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Deep Level ◽  
P Type

p‐type doping of gallium antimonide grown by molecular beam epitaxy using silicon

1990 ◽  
Vol 57 (21) ◽  
pp. 2256-2258 ◽  
Author(s):  
T. M. Rossi ◽  
D. A. Collins ◽  
D. H. Chow ◽  
T. C. McGill
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Gallium Antimonide ◽  
P Type

Heavily carbon-doped p-type (In)GaAs grown by gas-source molecular beam epitaxy using diiodomethane

1995 ◽  
Vol 150 ◽  
pp. 221-226
Author(s):  
T. Tomioka ◽  
N. Okamoto ◽  
H. Ando ◽  
S. Yamaura ◽  
T. Fujii
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Carbon Doped ◽  
Gas Source ◽  
P Type

Defects in HgCdTe grown by molecular beam epitaxy on GaAs substrates

2012 ◽  
Vol 20 (4) ◽  
Author(s):  
I. Izhnin ◽  
A. Izhnin ◽  
H. Savytskyy ◽  
O. Fitsych ◽  
N. Mikhailov ◽  
...  
Keyword(s):  
Optical Properties ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Buffer Layers ◽  
Structural Defects ◽  
Donor Concentration ◽  
Ion Milling ◽  
Electrical And Optical Properties ◽  
Gaas Substrates ◽  
Cdte Buffer

AbstractThe Hall effect and photoluminescence measurements combined with annealing and/or ion milling were used to study the electrical and optical properties of HgCdTe films grown by molecular-beam epitaxy on GaAs substrates with ZnTe and CdTe buffer layers. Unintentional donor doping, likely from the substrate, which resulted in residual donor concentration of the order of 1015 cm−3, was observed in the films. Also, acceptor states, possibly related to structural defects, were observed.

Structural characterization of molecular beam epitaxy grown ZnSe-based layers on GaAs substrates for blue–green laser diodes

2000 ◽  
Vol 360 (1-2) ◽  
pp. 195-204 ◽  
Author(s):  
G. Kiriakidis ◽  
K. Moschovis ◽  
P. Uusimaa ◽  
A. Salokatve ◽  
M. Pessa ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Structural Characterization ◽  
Molecular Beam ◽  
Laser Diodes ◽  
Green Laser ◽  
Gaas Substrates
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