Heavily carbon-doped p-type (In)GaAs grown by gas-source molecular beam epitaxy using diiodomethane
1994 ◽
Vol 136
(1-4)
◽
pp. 191-194
◽
Keyword(s):
2007 ◽
Vol 301-302
◽
pp. 212-216
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Keyword(s):
1997 ◽
Vol 36
(Part 1, No. 3B)
◽
pp. 1866-1868
◽
1998 ◽
Vol 193
(1-2)
◽
pp. 28-32
◽
1996 ◽
Vol 159
(1-4)
◽
pp. 257-260
◽
1993 ◽
Vol 32
(Part 2, No. 12A)
◽
pp. L1725-L1727
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Keyword(s):
1996 ◽
Vol 35
(Part 2, No. 2B)
◽
pp. L195-L197
◽
Keyword(s):
1991 ◽
Vol 30
(Part 2, No. 9B)
◽
pp. L1609-L1611
◽
Keyword(s):
1991 ◽
Vol 30
(Part 2, No. 5A)
◽
pp. L875-L875
◽
Keyword(s):
1992 ◽
Vol 10
(2)
◽
pp. 846
◽
Keyword(s):