Role of ZnS buffer layers in growth of zincblende ZnO on GaAs substrates by metalorganic molecular-beam epitaxy

2000 ◽  
Vol 221 (1-4) ◽  
pp. 435-439 ◽  
Author(s):  
A.A Ashrafi ◽  
A Ueta ◽  
H Kumano ◽  
I Suemune
2012 ◽  
Vol 20 (4) ◽  
Author(s):  
I. Izhnin ◽  
A. Izhnin ◽  
H. Savytskyy ◽  
O. Fitsych ◽  
N. Mikhailov ◽  
...  

AbstractThe Hall effect and photoluminescence measurements combined with annealing and/or ion milling were used to study the electrical and optical properties of HgCdTe films grown by molecular-beam epitaxy on GaAs substrates with ZnTe and CdTe buffer layers. Unintentional donor doping, likely from the substrate, which resulted in residual donor concentration of the order of 1015 cm−3, was observed in the films. Also, acceptor states, possibly related to structural defects, were observed.


2017 ◽  
Vol 34 (1) ◽  
pp. 018101
Author(s):  
Hai-Long Yu ◽  
Hao-Yue Wu ◽  
Hai-Jun Zhu ◽  
Guo-Feng Song ◽  
Yun Xu

1994 ◽  
Vol 136 (1-4) ◽  
pp. 204-209 ◽  
Author(s):  
D. Marx ◽  
H. Asahi ◽  
X.F. Liu ◽  
Y. Okuno ◽  
K. Inoue ◽  
...  

2010 ◽  
Vol 519 (1) ◽  
pp. 228-230 ◽  
Author(s):  
Ruiting Hao ◽  
Shukang Deng ◽  
Lanxian Shen ◽  
Peizhi Yang ◽  
Jielei Tu ◽  
...  

Sign in / Sign up

Export Citation Format

Share Document