Influence of Near-Surface Defects in Si Induced by Reactive Ion Etching on the Electrical Properties of the Pt/n-Si Interface

1997 ◽  
Vol 36 (Part 1, No. 11) ◽  
pp. 6682-6686 ◽  
Author(s):  
Masato Koyama ◽  
Chon-wa Cheong ◽  
Koji Yokoyama ◽  
Iwao Ohdomari
Keyword(s):  
Electrical Properties ◽  
Surface Defects ◽  
Reactive Ion Etching ◽  
Ion Etching ◽  
Near Surface

Reactive Ion Etching Damage to Ferroelectric Thin Films Capacitors

1994 ◽  
Vol 361 ◽  
Author(s):  
W. Pan ◽  
C.L. Thio ◽  
S.B. Desu ◽  
Cheewon Chung
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Leakage Current ◽  
Reactive Ion Etching ◽  
Ferroelectric Thin Films ◽  
Electric Properties ◽  
Etching Time ◽  
Ion Etching ◽  
Before And After ◽  
Ferroelectric Capacitors

ABSTRACTReactive ion etching damage to sputtered Pt/PZT/Pt ferroelectric capacitors was studied using Ar and CHCIFCF3 etch gases. Electrical properties, hysteresis, fatigue, and leakage current of PZT capacitors, before and after etching, were compared to examine the etching damage. It is found that the damage effects depend on etching time and are mainly due to the physical bombardment effect. The PZT capacitors etched with CHCIFCF3 plasma showed less damage than those etched in Ar plasma. The electric properties of etched Pt/PZT/Pt capacitors are recovered by annealing at 400 °C for 30min.

Study of near-surface disorder and surface residues after reactive Ion etching of Silicon

1986 ◽  
Vol 9 (5) ◽  
pp. 275-281 ◽  
Author(s):  
G. S. Oehrlein ◽  
G. J. Coyle ◽  
J. G. Clabes ◽  
Y. H. Lee
Keyword(s):  
Reactive Ion Etching ◽  
Ion Etching ◽  
Near Surface ◽  
Surface Disorder

Reactive ion etching damage to the electrical properties of ferroelectric thin films

1998 ◽  
Vol 13 (2) ◽  
pp. 362-367 ◽  
Author(s):  
W. Pan ◽  
C. L. Thio ◽  
S. B. Desu
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Leakage Current ◽  
Reactive Ion Etching ◽  
Hysteresis Loops ◽  
Ferroelectric Thin Films ◽  
Etching Time ◽  
Ion Etching ◽  
Degradation Properties ◽  
Ferroelectric Capacitors

Reactive ion etching damage to Pt/Pb(Zr, Ti)O3/Pt ferroelectric capacitors was evaluated under Ar bombardment and CHClFCF3 etch plasmas. The hysteresis and degradation properties, including fatigue and leakage current, were examined systematically to study the mechanism of damage. The damage was measured quantitatively by comparing the relative voltage shift with respect to the initial hysteresis loops. The damage effects were found to be dependent on etching time and mainly due to the physical effect of ion bombardment. The electrical properties of the etched Pt/Pb(Zr, Ti)O3/Pt capacitors were substantially recovered by annealing at 400 °C for 30 min.

Epoxy-Based Multichannel Microelectrode for Insect Biopotential Recording

2006 ◽  
Vol 18 (4) ◽  
pp. 499-503
Author(s):  
Yoshihiko Kuwana ◽  
Keyword(s):  
Electrical Properties ◽  
Electrode Material ◽  
Reactive Ion Etching ◽  
Anisotropic Etching ◽  
Size Analysis ◽  
Ion Etching ◽  
Shape And Size ◽  
Biopotential Recording

Microelectrodes are being developed in order to record action biopotentials of insects. Silicon was conventionally used as the electrode material and microelectrodes were fabricated by anisotropic etching and reactive ion etching. Because electrode microprobe shape and size were very difficult to control, we propose a novel pin-shaped multichannel microelectrode. Epoxy-based UV photoresist must be used as the electrode material to facilitate the control of the microelectrode shape and size. Analysis of the electrical properties of this electrode showed that it has properties excellent enough to record insect biopotentials.

Passivation of Zn-Acceptors in InGaAs During Rie with CHF3/H2 and CH4/H2

1989 ◽  
Vol 163 ◽  
Author(s):  
Martin Möhrle
Keyword(s):  
Surface Layer ◽  
Electrical Activity ◽  
Reactive Ion Etching ◽  
Ion Etching ◽  
Near Surface

AbstractReactive ion etching of highly Zn-doped InGaAs with hydrogen-containing gases such as CHF3/H2, CH4/H2 and CH4/He leads to a drastical reduction of the concentration of electrically active acceptors in a near-surface layer. Ti/Pt/Au contacts applied on as-treated p++-InGaAs layers show non-ohmic I/V-characteristics due to this passivation effect. Annealing at moderate temperatures (330°C, 20 minutes) was found to restore full electrical activity.

Reactive Ion Etching (RIE) Induced p- to n-Type Conversion in Extrinsically Doped P-Type hgcdte

1997 ◽  
Vol 487 ◽  
Author(s):  
C. A. Musca ◽  
E. P. G. Smith ◽  
J. F. Siliquini ◽  
J. M. Dell ◽  
J. Antoszewski ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Laser Beam ◽  
Reactive Ion Etching ◽  
Epitaxial Layers ◽  
Processing Conditions ◽  
Induced Current ◽  
Type Conversion ◽  
Ion Etching ◽  
Type Layer ◽  
P Type

AbstractMercury annealing of reactive ion etching (RIE) induced p- to n-type conversion in extrinsically doped p-type epitaxial layers of HgCdTe (x=0.31) has been used to reconvert n-type conversion sustained during RIE processing. For the RIE processing conditions used (400mT, CH4/H2, 90 W) p- to n-type conversion was observed using laser beam induced current (LBIC) measurements. After a sealed tube mercury anneal at 200°C for 17 hours, LBIC measurements clearly indicated no n-type converted region remained. Subsequent Hall measurements confirmed that the material consisted of a p-type layer, with electrical properties equivalent to that of the initial as-grown wafer (NA-ND=2× 1016 cm−3, μ=350 cm2.V−1.−1).

Near‐Surface Damage and Contamination after  CF 4 /  H 2 Reactive Ion Etching of Si

1985 ◽  
Vol 132 (6) ◽  
pp. 1441-1447 ◽  
Author(s):  
G. S. Oehrlein ◽  
R. M. Tromp ◽  
J. C. Tsang ◽  
Y. H. Lee ◽  
E. J. Petrillo
Keyword(s):  
Reactive Ion Etching ◽  
Surface Damage ◽  
Ion Etching ◽  
Near Surface

Reactive Ion Etching (RIE) Induced p- to n-Type Conversion in Extrinsically Doped p-Type HgCdTe

1997 ◽  
Vol 484 ◽  
Author(s):  
C. A. Musca ◽  
E. P. G. Smith ◽  
J. F. Siliquini ◽  
J. M. Dell ◽  
J. Antoszewski ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Laser Beam ◽  
Reactive Ion Etching ◽  
Epitaxial Layers ◽  
Processing Conditions ◽  
Induced Current ◽  
Type Conversion ◽  
Ion Etching ◽  
Type Layer ◽  
P Type

AbstractMercury annealing of reactive ion etching (RIE) induced p- to n-type conversion in extrinsically doped p-type epitaxial layers of HgCdTe (x=0.3 1) has been used to reconvert n-type conversion sustained during RIE processing. For the RIE processing conditions used (400mT, CH4/H2, 90 W) p- to n-type conversion was observed using laser beam induced current (LBIC) measurements. After a sealed tube mercury anneal at 200°C for 17 hours, LBIC measurements clearly indicated no n-type converted region remained. Subsequent Hall measurements confirmed that the material consisted of a p-type layer, with electrical properties equivalent to that of the initial as-grown wafer (NA-ND=2×1016 cm−3,.=350 cm2.V−1. S−1).

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