Epoxy-Based Multichannel Microelectrode for Insect Biopotential Recording

2006 ◽  
Vol 18 (4) ◽  
pp. 499-503
Author(s):  
Yoshihiko Kuwana ◽  
Keyword(s):  
Electrical Properties ◽  
Electrode Material ◽  
Reactive Ion Etching ◽  
Anisotropic Etching ◽  
Size Analysis ◽  
Ion Etching ◽  
Shape And Size ◽  
Biopotential Recording

Microelectrodes are being developed in order to record action biopotentials of insects. Silicon was conventionally used as the electrode material and microelectrodes were fabricated by anisotropic etching and reactive ion etching. Because electrode microprobe shape and size were very difficult to control, we propose a novel pin-shaped multichannel microelectrode. Epoxy-based UV photoresist must be used as the electrode material to facilitate the control of the microelectrode shape and size. Analysis of the electrical properties of this electrode showed that it has properties excellent enough to record insect biopotentials.

Reactive Ion Etching Damage to Ferroelectric Thin Films Capacitors

1994 ◽  
Vol 361 ◽  
Author(s):  
W. Pan ◽  
C.L. Thio ◽  
S.B. Desu ◽  
Cheewon Chung
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Leakage Current ◽  
Reactive Ion Etching ◽  
Ferroelectric Thin Films ◽  
Electric Properties ◽  
Etching Time ◽  
Ion Etching ◽  
Before And After ◽  
Ferroelectric Capacitors

ABSTRACTReactive ion etching damage to sputtered Pt/PZT/Pt ferroelectric capacitors was studied using Ar and CHCIFCF3 etch gases. Electrical properties, hysteresis, fatigue, and leakage current of PZT capacitors, before and after etching, were compared to examine the etching damage. It is found that the damage effects depend on etching time and are mainly due to the physical bombardment effect. The PZT capacitors etched with CHCIFCF3 plasma showed less damage than those etched in Ar plasma. The electric properties of etched Pt/PZT/Pt capacitors are recovered by annealing at 400 °C for 30min.

Influence of Near-Surface Defects in Si Induced by Reactive Ion Etching on the Electrical Properties of the Pt/n-Si Interface

1997 ◽  
Vol 36 (Part 1, No. 11) ◽  
pp. 6682-6686 ◽  
Author(s):  
Masato Koyama ◽  
Chon-wa Cheong ◽  
Koji Yokoyama ◽  
Iwao Ohdomari
Keyword(s):  
Electrical Properties ◽  
Surface Defects ◽  
Reactive Ion Etching ◽  
Ion Etching ◽  
Near Surface

Reactive ion etching damage to the electrical properties of ferroelectric thin films

1998 ◽  
Vol 13 (2) ◽  
pp. 362-367 ◽  
Author(s):  
W. Pan ◽  
C. L. Thio ◽  
S. B. Desu
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Leakage Current ◽  
Reactive Ion Etching ◽  
Hysteresis Loops ◽  
Ferroelectric Thin Films ◽  
Etching Time ◽  
Ion Etching ◽  
Degradation Properties ◽  
Ferroelectric Capacitors

Reactive ion etching damage to Pt/Pb(Zr, Ti)O3/Pt ferroelectric capacitors was evaluated under Ar bombardment and CHClFCF3 etch plasmas. The hysteresis and degradation properties, including fatigue and leakage current, were examined systematically to study the mechanism of damage. The damage was measured quantitatively by comparing the relative voltage shift with respect to the initial hysteresis loops. The damage effects were found to be dependent on etching time and mainly due to the physical effect of ion bombardment. The electrical properties of the etched Pt/Pb(Zr, Ti)O3/Pt capacitors were substantially recovered by annealing at 400 °C for 30 min.

Selective Removal of Silicon-Germanium: Chemical and Reactive Ion Etching

1993 ◽  
Vol 298 ◽  
Author(s):  
F. Scott Johnson ◽  
Veena Misra ◽  
J. J. Wortman ◽  
Leanne R. Martin ◽  
Gari A. Harris ◽  
...  
Keyword(s):  
Chemical Composition ◽  
Silicon Dioxide ◽  
Silicon Germanium ◽  
Gas Flow ◽  
Substrate Surface ◽  
Reactive Ion Etching ◽  
Anisotropic Etching ◽  
Selective Removal ◽  
Ion Etching ◽  
Narrow Base

AbstractThe use of both chemical and reactive ion etching for the selective removal of SixGe1-x alloys with respect to both silicon and silicon dioxide has been investigated. We have found that a solution of NH4OH:H2O2:H2O is effective in selectively etching the SixGe1-x films with respect to both of these materials. The chemical composition of the substrate surface after removal of insitu doped SixGe1-x films was evaluated using EDS and SIMS. Diffusion from insitu doped Si0.7Ge0.3, followed by selective removal, was used to demonstrate self-aligned npn dopant profiles with narrow base widths. Reactive ion etching of SixGe1-x alloys was investigated using SF6, CF4, and Cl2 based chemistries. Pressure, power, and gas flow ratios were optimized to provide the least isotropic etch possible for SixGe1-x films containing approximately 40% Ge. Selectivity and degree of anisotropic etching were determined as a function of Ge content for samples with 0% to 100% Ge. Samples were analyzed using SEM and ellipsometry. Highest selectivities were achieved using SF6 and O2.

Reactive Ion Etching (RIE) Induced p- to n-Type Conversion in Extrinsically Doped P-Type hgcdte

1997 ◽  
Vol 487 ◽  
Author(s):  
C. A. Musca ◽  
E. P. G. Smith ◽  
J. F. Siliquini ◽  
J. M. Dell ◽  
J. Antoszewski ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Laser Beam ◽  
Reactive Ion Etching ◽  
Epitaxial Layers ◽  
Processing Conditions ◽  
Induced Current ◽  
Type Conversion ◽  
Ion Etching ◽  
Type Layer ◽  
P Type

AbstractMercury annealing of reactive ion etching (RIE) induced p- to n-type conversion in extrinsically doped p-type epitaxial layers of HgCdTe (x=0.31) has been used to reconvert n-type conversion sustained during RIE processing. For the RIE processing conditions used (400mT, CH4/H2, 90 W) p- to n-type conversion was observed using laser beam induced current (LBIC) measurements. After a sealed tube mercury anneal at 200°C for 17 hours, LBIC measurements clearly indicated no n-type converted region remained. Subsequent Hall measurements confirmed that the material consisted of a p-type layer, with electrical properties equivalent to that of the initial as-grown wafer (NA-ND=2× 1016 cm−3, μ=350 cm2.V−1.−1).

Anisotropic and Selective Reactive Ion Etching of SiC in CHF3 and Oxygen Plasma

1986 ◽  
Vol 76 ◽  
Author(s):  
W-S. Pan ◽  
A. J. Steckl
Keyword(s):  
Thin Films ◽  
Emission Intensity ◽  
Etch Rate ◽  
Oxygen Plasma ◽  
Reactive Ion Etching ◽  
Anisotropic Etching ◽  
Rf Power ◽  
Ion Etching ◽  
Oxygen Percentage ◽  
Dc Potential

ABSTRACTThe use of CHF3 plus oxygen plasma to achieve selective and anisotropic patterning of SiC thin films in the reactive ion etching (RIE) mode is reported. Experiments were performed using various levels of oxygen percentage (from zero to 90%), pressure (from 20 to 300 mTorr) and power (from 100W to 350W). Anisotropic etching of SiC with a vertical-to-lateral etch ratio in excess of 8:1 was measured for a CHF3 + 75%02 mixture at 20mT pressure and 200W RF power. Under these conditions, the SiC etch rate was measured to be 400 A/min and the selectivity over Si was approximately 2.2:1. The effect of the cathode DC potential and emission intensity of various species in the plasma on the SiC and Si etch rates is considered.

Reactive Ion Etching (RIE) Induced p- to n-Type Conversion in Extrinsically Doped p-Type HgCdTe

1997 ◽  
Vol 484 ◽  
Author(s):  
C. A. Musca ◽  
E. P. G. Smith ◽  
J. F. Siliquini ◽  
J. M. Dell ◽  
J. Antoszewski ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Laser Beam ◽  
Reactive Ion Etching ◽  
Epitaxial Layers ◽  
Processing Conditions ◽  
Induced Current ◽  
Type Conversion ◽  
Ion Etching ◽  
Type Layer ◽  
P Type

AbstractMercury annealing of reactive ion etching (RIE) induced p- to n-type conversion in extrinsically doped p-type epitaxial layers of HgCdTe (x=0.3 1) has been used to reconvert n-type conversion sustained during RIE processing. For the RIE processing conditions used (400mT, CH4/H2, 90 W) p- to n-type conversion was observed using laser beam induced current (LBIC) measurements. After a sealed tube mercury anneal at 200°C for 17 hours, LBIC measurements clearly indicated no n-type converted region remained. Subsequent Hall measurements confirmed that the material consisted of a p-type layer, with electrical properties equivalent to that of the initial as-grown wafer (NA-ND=2×1016 cm−3,.=350 cm2.V−1. S−1).

Effect of Reactive-Ion Etching on Thermal Oxide Properties on 4H-SiC

2006 ◽  
Vol 527-529 ◽  
pp. 983-986
Author(s):  
Kevin Matocha ◽  
Chris S. Cowen ◽  
Richard Beaupre ◽  
Jesse B. Tucker
Keyword(s):  
Electrical Properties ◽  
Reactive Ion Etching ◽  
Wet Etching ◽  
Breakdown Field ◽  
Band Offset ◽  
Ion Etching ◽  
Mos Capacitors ◽  
Oxide Breakdown ◽  
Conduction Band Offset ◽  
Thermal Oxide

4H-SiC MOS capacitors were used to characterize the effect of reactive-ion etching of the SiC surface on the electrical properties of N2O-grown thermal oxides. The oxide breakdown field reduces from 9.5 MV/cm with wet etching to saturate at 9.0 MV/cm with 30% reactive-ion over-etching. Additionally, the conduction-band offset barrier height, φB, progressively decreases from 2.51 eV with wet etching to 2.46 eV with 45% reactive-ion over-etching.

Effects of Reactive Ion Etching on the Electrical Properties of n-GaN Surfaces

1995 ◽  
Vol 395 ◽  
Author(s):  
A. T. Ping ◽  
A. C. Schmitz ◽  
M. Asif Khan ◽  
I. Adesida
Keyword(s):  
Electrical Properties ◽  
Schottky Barrier ◽  
Ideality Factor ◽  
Schottky Barrier Height ◽  
Schottky Diodes ◽  
Reactive Ion Etching ◽  
Ion Etching ◽  
Self Bias ◽  
Current Voltage ◽  
Dry Etch

ABSTRACTDry etch damage on n-GaN has been investigated using Pd Schottky diodes fabricated on surfaces etched by conventional reactive ion etching with SiCl4 plasma. The Schottky barrier height and ideality factor were investigated as a function of the plasma self-bias voltage. Current-voltage measurements revealed severe degradation of both the forward and reverse characteristics for plasma self-bias voltages in excess of -150 V.

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