Aspects of the Conductivity Modulation Enhancement Effect in a 4500 V Planar Metal Oxide Semiconductor Device and Its Electrical Characteristics

Kazuya Nakayama; Hideo Matsuda

doi:10.1143/jjap.37.4751

Aspects of the Conductivity Modulation Enhancement Effect in a 4500 V Planar Metal Oxide Semiconductor Device and Its Electrical Characteristics

Japanese Journal of Applied Physics ◽

10.1143/jjap.37.4751 ◽

1998 ◽

Vol 37 (Part 1, No. 9A) ◽

pp. 4751-4757 ◽

Cited By ~ 3

Author(s):

Kazuya Nakayama ◽

Hideo Matsuda

Keyword(s):

Metal Oxide ◽

Semiconductor Device ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Enhancement Effect ◽

Electrical Characteristics

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Electrical Characteristics of ZrO2Gate Dielectric Deposited on Ultrathin Silicon Capping Layer for SiGe Metal-Oxide-Semiconductor Device Applications

Japanese Journal of Applied Physics ◽

10.1143/jjap.41.5129 ◽

2002 ◽

Vol 41 (Part 1, No. 8) ◽

pp. 5129-5130 ◽

Cited By ~ 3

Author(s):

Sangmoo Choi ◽

Sanghun Jeon ◽

Hyunsang Hwang ◽

Young J. Song ◽

Jung-Wook Lim ◽

...

Keyword(s):

Metal Oxide ◽

Semiconductor Device ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Electrical Characteristics ◽

Capping Layer ◽

Device Applications

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Electrical Characteristics of TiO2/ZrSixOyStack Gate Dielectric for Metal-Oxide-Semiconductor Device Applications

Japanese Journal of Applied Physics ◽

10.1143/jjap.40.6803 ◽

2001 ◽

Vol 40 (Part 1, No. 12) ◽

pp. 6803-6804 ◽

Cited By ~ 3

Author(s):

Hyunjun Sim ◽

Sanghun Jeon ◽

Hyunsang Hwang

Keyword(s):

Metal Oxide ◽

Gate Dielectric ◽

Semiconductor Device ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Electrical Characteristics ◽

Device Applications

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Electrical Characteristics of Metal-Oxide-Semiconductor Device with Sc Gate on Atomic-Layer-Deposited HfO2

Japanese Journal of Applied Physics ◽

10.1143/jjap.44.l1275 ◽

2005 ◽

Vol 44 (No. 41) ◽

pp. L1275-L1277 ◽

Cited By ~ 2

Author(s):

Hyundoek Yang ◽

Hokyung Park ◽

Dongsoo Lee ◽

Sangmoo Choi ◽

Hyunsang Hwang

Keyword(s):

Metal Oxide ◽

Semiconductor Device ◽

Atomic Layer ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Electrical Characteristics

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Electrical characteristics of a TaOxNy/ZrSixOy stack gate dielectric for metal–oxide–semiconductor device applications

Applied Physics Letters ◽

10.1063/1.1427155 ◽

2001 ◽

Vol 79 (26) ◽

pp. 4408-4410 ◽

Cited By ~ 4

Author(s):

Hyungsuk Jung ◽

Hyundoek Yang ◽

Kiju Im ◽

Hyunsang Hwang

Keyword(s):

Metal Oxide ◽

Gate Dielectric ◽

Semiconductor Device ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Electrical Characteristics ◽

Device Applications

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Electrical characteristics and reliability properties of metal-oxide-semiconductor field-effect transistors with La2O3 gate dielectric

Journal of Applied Physics ◽

10.1063/1.2356902 ◽

2006 ◽

Vol 100 (7) ◽

pp. 074108 ◽

Cited By ~ 13

Author(s):

Chih-Hsiang Hsu ◽

Ming-Tsong Wang ◽

Joseph Ya-Min Lee

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Gate Dielectric ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Electrical Characteristics

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Effects of Successive Annealing of Oxides on Electrical Characteristics of Silicon Carbide Metal-Oxide-Semiconductor Structures

Materials Science Forum ◽

10.4028/www.scientific.net/msf.389-393.1009 ◽

2002 ◽

Vol 389-393 ◽

pp. 1009-1012 ◽

Cited By ~ 4

Author(s):

Masahito Yoshikawa ◽

Mirei Satoh ◽

Takeshi Ohshima ◽

Hisayoshi Itoh

Keyword(s):

Silicon Carbide ◽

Metal Oxide ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Electrical Characteristics ◽

Semiconductor Structures

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Thin germanium-carbon alloy layers grown directly on silicon for metal-oxide-semiconductor device applications

Applied Physics Letters ◽

10.1063/1.2195008 ◽

2006 ◽

Vol 88 (15) ◽

pp. 152101 ◽

Cited By ~ 15

Author(s):

D. Q. Kelly ◽

I. Wiedmann ◽

J. P. Donnelly ◽

S. V. Joshi ◽

S. Dey ◽

...

Keyword(s):

Metal Oxide ◽

Semiconductor Device ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Device Applications

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Fromab initioproperties of the Si-SiO2interface, to electrical characteristics of metal-oxide-semiconductor devices

Journal of Physics Conference Series ◽

10.1088/1742-6596/242/1/012010 ◽

2010 ◽

Vol 242 ◽

pp. 012010 ◽

Cited By ~ 1

Author(s):

S Markov ◽

P Sushko ◽

C Fiegna ◽

E Sangiorgi ◽

A Shluger ◽

...

Keyword(s):

Metal Oxide ◽

Semiconductor Devices ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Electrical Characteristics

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Defects Induced by Deep Preamorphization and Their Effects on Metal Oxide Semiconductor Device Characteristics

Journal of The Electrochemical Society ◽

10.1149/1.1837523 ◽

1997 ◽

Vol 144 (3) ◽

pp. 1020-1024 ◽

Cited By ~ 6

Author(s):

Masayasu Miyake ◽

Mitsutoshi Takahashi

Keyword(s):

Metal Oxide ◽

Semiconductor Device ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor

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A Comparative Study of Nitrogen Gas Flow Ratio Dependence on the Electrical Characteristics of Sputtered Titanium Nitride Gate Bulk Planar Metal–Oxide–Semiconductor Field-Effect Transistors and Fin-Type Metal–Oxide–Semiconductor Field-Effect Transistors

Japanese Journal of Applied Physics ◽

10.1143/jjap.48.05dc01 ◽

2009 ◽

Vol 48 (5) ◽

pp. 05DC01 ◽

Cited By ~ 20

Author(s):

Tetsuro Hayashida ◽

Yongxun Liu ◽

Takashi Matsukawa ◽

Kazuhiko Endo ◽

Shinich O'uchi ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Gas Flow ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Electrical Characteristics ◽

Flow Ratio ◽

Nitrogen Gas ◽

Gas Flow Ratio

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