Fromab initioproperties of the Si-SiO2interface, to electrical characteristics of metal-oxide-semiconductor devices
2010 ◽
Vol 242
◽
pp. 012010
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S Markov
◽
P Sushko
◽
C Fiegna
◽
E Sangiorgi
◽
A Shluger
◽
...
2002 ◽
Vol 20
(1)
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pp. 306
◽
J. Terry
◽
L. I. Haworth
◽
A. M. Gundlach
◽
J. T. M. Stevenson
◽
V. M. Vishnyakov
◽
...
D. Q. Kelly
◽
J. J. -H. Chen
◽
S. Guha
◽
S. K. Banerjee
Takuji Hosoi
◽
Momoe Ohsako
◽
Takayoshi SHIMURA
◽
Heiji WATANABE
2008 ◽
Vol 47
(2)
◽
pp. 872-878
◽
Chih-Feng Huang
◽
Bing-Yue Tsui
◽
Chih-Hsun Lu
2006 ◽
Vol 9
(11)
◽
pp. F80
◽
Chin-Lung Cheng
◽
Kuei-Shu Chang-Liao
◽
Tien-Ko Wang
2006 ◽
Vol 100
(7)
◽
pp. 074108
◽
Chih-Hsiang Hsu
◽
Ming-Tsong Wang
◽
Joseph Ya-Min Lee
2009 ◽
Vol 27
(3)
◽
pp. 1261
Shu-Tong Chang
◽
Ming-Han Liao
◽
Chang-Chun Lee
◽
Jacky Huang
◽
Wei-Ching Wang
◽
...
2002 ◽
Vol 389-393
◽
pp. 1009-1012
◽
Masahito Yoshikawa
◽
Mirei Satoh
◽
Takeshi Ohshima
◽
Hisayoshi Itoh
2010 ◽
Vol 96
(24)
◽
pp. 242901
◽
Yi Zhao
◽
Koji Kita
◽
Akira Toriumi
2012 ◽
Vol 12
◽
pp. S10-S19
◽
Heiji Watanabe
◽
Katsuhiro Kutsuki
◽
Atsushi Kasuya
◽
Iori Hideshima
◽
Gaku Okamoto
◽
...