Room-Temperature Continuous-Wave Operation of InGaN Multi-Quantum-Well Laser Diodes Grown on an n-GaN Substrate with a Backside n-Contact
1999 ◽
Vol 38
(Part 2, No. 2B)
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pp. L184-L186
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2008 ◽
Vol 25
(4)
◽
pp. 1281-1283
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Keyword(s):
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