Room-temperature continuous-wave operation of InGaN multiple-quantum-well laser diodes with an asymmetric waveguide structure

1999 ◽  
Vol 75 (4) ◽  
pp. 581-583 ◽  
Author(s):  
Michael Kneissl ◽  
David P. Bour ◽  
Chris G. Van de Walle ◽  
Linda T. Romano ◽  
John E. Northrup ◽  
...  
Keyword(s):  
Quantum Well ◽  
Room Temperature ◽  
Continuous Wave ◽  
Multiple Quantum Well ◽  
Laser Diodes ◽  
Waveguide Structure ◽  
Multiple Quantum ◽  
Quantum Well Laser ◽  
Continuous Wave Operation ◽  
Multiple Quantum Well Laser

Continuous-wave operation of ultraviolet InGaN/InAlGaN multiple-quantum-well laser diodes

2003 ◽  
Vol 82 (15) ◽  
pp. 2386-2388 ◽  
Author(s):  
Michael Kneissl ◽  
David W. Treat ◽  
Mark Teepe ◽  
Naoko Miyashita ◽  
Noble M. Johnson
Keyword(s):  
Quantum Well ◽  
Continuous Wave ◽  
Multiple Quantum Well ◽  
Laser Diodes ◽  
Multiple Quantum ◽  
Quantum Well Laser ◽  
Continuous Wave Operation ◽  
Multiple Quantum Well Laser

Continuous-Wave Operation ofm-Plane InGaN Multiple Quantum Well Laser Diodes

2007 ◽  
Vol 46 (No. 9) ◽  
pp. L187-L189 ◽  
Author(s):  
Kuniyoshi Okamoto ◽  
Hiroaki Ohta ◽  
Shigefusa F. Chichibu ◽  
Jun Ichihara ◽  
Hidemi Takasu
Keyword(s):  
Quantum Well ◽  
Continuous Wave ◽  
Multiple Quantum Well ◽  
Laser Diodes ◽  
Multiple Quantum ◽  
Quantum Well Laser ◽  
Continuous Wave Operation ◽  
Multiple Quantum Well Laser

Continuous-Wave Operation at 250 K of InGaN Multiple Quantum Well Laser Diodes Grown on 6H-SiC with Vertical Conducting Structure

1998 ◽  
Vol 37 (Part 2, No. 10B) ◽  
pp. L1205-L1207 ◽  
Author(s):  
Reiko Soejima ◽  
Akito Kuramata ◽  
Shin-ichi Kubota ◽  
Kay Domen ◽  
Kazuhiko Horino ◽  
...  
Keyword(s):  
Quantum Well ◽  
Continuous Wave ◽  
Multiple Quantum Well ◽  
Laser Diodes ◽  
Multiple Quantum ◽  
Quantum Well Laser ◽  
Continuous Wave Operation ◽  
Multiple Quantum Well Laser

scholarly journals Performance characteristics of cw InGaN multiple-quantum-well laser diodes

2000 ◽  
Vol 639 ◽  
Author(s):  
Michael Kneissl ◽  
William S. Wong ◽  
Chris. G. Van de Walle ◽  
John E. Northrup ◽  
David W. Treat ◽  
...  
Keyword(s):  
Quantum Well ◽  
Continuous Wave ◽  
Multiple Quantum Well ◽  
Laser Diodes ◽  
Chemical Vapor ◽  
Performance Characteristics ◽  
Multiple Quantum ◽  
Quantum Well Laser ◽  
Lift Off ◽  
Multiple Quantum Well Laser

ABSTRACTThe performance characteristics are reported for continuous-wave (cw) InGaN multiple-quantum-well laser diodes grown on epitaxially laterally overgrown GaN on sapphire substrates by metalorganic chemical vapor deposition. Room-temperature cw threshold currents as low as 41mA with operating voltages of 6.0V were obtained. The emission wavelength was near 400 nm with output powers greater than 20 mW per facet. Under cw conditions laser oscillation was observed up to 90°C. A significant reduction in thermal resistance was observed for laser diodes transferred from sapphire onto Cu substrates by excimer laser lift-off, resulting in increased cw output power of more than 100mW.

Time delay in InGaN multiple quantum well laser diodes at room temperature

2010 ◽  
Vol 19 (12) ◽  
pp. 124211 ◽  
Author(s):  
Lian Ji ◽  
De-Sheng Jiang ◽  
Shu-Ming Zhang ◽  
Zong-Shun Liu ◽  
Chang Zeng ◽  
...  
Keyword(s):  
Time Delay ◽  
Quantum Well ◽  
Room Temperature ◽  
Multiple Quantum Well ◽  
Laser Diodes ◽  
Multiple Quantum ◽  
Quantum Well Laser ◽  
Multiple Quantum Well Laser
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