Detection Mechanism of Spontaneous Polarization in Ferroelectric Thin Films Using Electrostatic Force Microscopy

1999 ◽  
Vol 38 (Part 2, No. 3A) ◽  
pp. L264-L266 ◽  
Author(s):  
Kyongmi Lee ◽  
Hyunjung Shin ◽  
Won-Kyu Moon ◽  
Jong Up Jeon ◽  
Y. Eugene Pak
Keyword(s):  
Thin Films ◽  
Spontaneous Polarization ◽  
Electrostatic Force ◽  
Ferroelectric Thin Films ◽  
Electrostatic Force Microscopy ◽  
Detection Mechanism ◽  
Force Microscopy

scholarly journals Electrostatic force microscopy analysis of Bi0.7Dy0.3FeO3 thin films prepared by pulsed laser deposition integrated with ZnO films for microelectromechanical systems and memory applications

2018 ◽  
Vol 4 (2) ◽  
pp. 77-85
Author(s):  
Deepak Bhatia ◽  
Sandipta Roy ◽  
S. Nawaz ◽  
R.S. Meena ◽  
V.R. Palkar
Keyword(s):  
Thin Films ◽  
Electrical Transport ◽  
Microelectromechanical Systems ◽  
Electrostatic Force ◽  
Charge Trapping ◽  
Electrostatic Force Microscopy ◽  
Zno Films ◽  
Phase Dependence ◽  
Force Microscopy ◽  
Electric Charge Distribution

In this paper, we report the charge trapping phenomena in zinc oxide (n-ZnO) and Bi0.7Dy0.3FeO3 (BDFO)/ZnO thin films deposited on p-type <100> conducting Si substrate. The significant change in contrast above the protrusions of ZnO verifies the possibility of heavy accumulation of injected holes in there. The ZnO and BDFO/ZnO films were characterized by the electrostatic force microscopy (EFM) to understand the phase dependence phenomenon on the bias supporting electron tunnelling. The EFM has an important role in the analysis of electrical transport mechanism characterization and electric charge distribution of local surface in nanoscale devices. It was observed that in BDFO/ZnO, the contrast of EFM images remains constant with the bias switching and that primarily indicates availability of trap sites to host electrons. The change in contrast over the protrusions of ZnO suggests that mobility of the electrical charge carriers may be through the grain boundary. The formation of these hole-trapped sites may be assumed by bond breaking phenomenon.

Domain Images and Retention Properties of Pb(Zr,Ti)O3 Thin Films Observed by Electrostatic Force Microscopy

1999 ◽  
Vol 596 ◽  
Author(s):  
William Jo ◽  
D. C. Kim ◽  
J. W. Hong
Keyword(s):  
Thin Films ◽  
Charge Density ◽  
Surface Charge Density ◽  
Electrostatic Force ◽  
Electrostatic Force Microscopy ◽  
Retention Behavior ◽  
Charge Redistribution ◽  
Pzt Thin Films ◽  
Force Microscopy ◽  
Pzt Films

AbstractWe report results on domain retention in preferentially oriented Pb(Zr,Ti)O3 (PZT) thin films on Pt and on LaNiO3 (LNO) electrodes. Effects of bottom electrodes on domain images and retention properties have been explored by detecting an electrostatic force exerted on the biased conductive probe. It was demonstrated that polarization loss of PZT crystallites on LNO appears to be less than that of PZT grains on Pt. Moreover, charge retention was controlled by a reverse-poling protocol during electrostatic force microscopy (EFM) measurements. The surface charge density of the PZT films was observed as a function of time in a selected area where a region is single-poled and another region is reverse-poled. The retention behavior of the regions is very different; the single-poled region shows a declined response and the reverse-poled region reveals a retained characteristic. Decay and retention mechanisms are explained by space-charge redistribution and trapping of defects in the films.

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