DC and RF Performance of 50 nm Gate Pseudomorphic In0.7Ga0.3As/In0.52Al0.48As High Electron Mobility Transistors Grown on (411)A-Oriented InP Substrates by Molecular-Beam Epitaxy

High Electron ◽

High Electron Mobility ◽

Rf Performance ◽

Inp Substrates

Molecular beam epitaxy growth and characterization of InGaP/InGaAs pseudomorphic high electron mobility transistors (HEMTs) having a channel layer over critical layer thickness

IEEE Transactions on Electron Devices ◽

10.1109/16.987103 ◽

2002 ◽

Vol 49 (3) ◽

pp. 354-360 ◽

Cited By ~ 7

Author(s):

Seong-June Jo ◽

Jeong Hoon Kim ◽

Jong-In Song

Keyword(s):

Molecular Beam Epitaxy ◽

Electron Mobility ◽

Molecular Beam ◽

Molecular Beam Epitaxy Growth ◽

High Electron ◽

Critical Layer Thickness ◽

High Electron Mobility ◽

High-frequency AlGaN/GaN polarization-induced high electron mobility transistors grown by plasma-assisted molecular-beam epitaxy

Applied Physics Letters ◽

10.1063/1.125418 ◽

1999 ◽

Vol 75 (23) ◽

pp. 3653-3655 ◽

Cited By ~ 43

Author(s):

M. J. Murphy ◽

K. Chu ◽

H. Wu ◽

W. Yeo ◽

W. J. Schaff ◽

...

Keyword(s):

Molecular Beam Epitaxy ◽

Electron Mobility ◽

High Frequency ◽

Molecular Beam ◽

High Electron ◽

High Electron Mobility ◽

Structural and morphological properties of GaN buffer layers grown by ammonia molecular beam epitaxy on SiC substrates for AlGaN/GaN high electron mobility transistors

Journal of Applied Physics ◽

10.1063/1.2919163 ◽

2008 ◽

Vol 103 (9) ◽

pp. 093529 ◽

Cited By ~ 39

Author(s):

A. L. Corrion ◽

C. Poblenz ◽

F. Wu ◽

J. S. Speck

Keyword(s):

Molecular Beam Epitaxy ◽

Electron Mobility ◽

Molecular Beam ◽

Buffer Layers ◽

Morphological Properties ◽

High Electron ◽

High Electron Mobility ◽

Fabrication of strained and double heterojunction In/sub x/Ga/sub 1-x/P/In/sub 0.2/Ga/sub 0.8/As high electron mobility transistors grown by solid-source molecular beam epitaxy

IEEE Transactions on Electron Devices ◽

10.1109/16.841249 ◽

2000 ◽

Vol 47 (5) ◽

pp. 1115-1117 ◽

Cited By ~ 3

Author(s):

S.F. Yoon ◽

B.P. Gay ◽

H.Q. Zheng ◽

H.T. Kam ◽

J. Degenhardt

Keyword(s):

Molecular Beam Epitaxy ◽

Electron Mobility ◽

Molecular Beam ◽

High Electron ◽

High Electron Mobility ◽

Double Heterojunction

Impact of recess etching and surface treatments on ohmic contacts regrown by molecular-beam epitaxy for AlGaN/GaN high electron mobility transistors

Applied Physics Letters ◽

10.1063/1.4959831 ◽

2016 ◽

Vol 109 (4) ◽

pp. 041602 ◽

Cited By ~ 14

Author(s):

S. Joglekar ◽

M. Azize ◽

M. Beeler ◽

E. Monroy ◽

T. Palacios

Keyword(s):

Molecular Beam Epitaxy ◽

Electron Mobility ◽

Ohmic Contacts ◽

Molecular Beam ◽

Surface Treatments ◽

High Electron ◽

High Electron Mobility ◽

Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena ◽

AlGaN/GaN high electron mobility transistors on 100 mm silicon substrates by plasma molecular beam epitaxy

10.1116/1.3549889 ◽

2011 ◽

Vol 29 (3) ◽

pp. 03C107 ◽

Cited By ~ 11

Author(s):

W. E. Hoke ◽

T. D. Kennedy ◽

J. J. Mosca ◽

A. J. Kerr ◽

A. Torabi ◽

...

Keyword(s):

Molecular Beam Epitaxy ◽

Electron Mobility ◽

Molecular Beam ◽

Silicon Substrates ◽

High Electron ◽

High Electron Mobility ◽

Review of Recent Developments in Growth of AlGaN/GaN High-Electron Mobility Transistors on 4H-SiC by Plasma-Assisted Molecular Beam Epitaxy

IEICE Transactions on Electronics ◽

10.1093/ietele/e89-c.7.906 ◽

2006 ◽

Vol E89-C (7) ◽

pp. 906-912 ◽

Cited By ~ 12

Author(s):

A. CORRION

Keyword(s):

Molecular Beam Epitaxy ◽

Electron Mobility ◽

Molecular Beam ◽

High Electron ◽

High Electron Mobility ◽

Recent Developments

Molecular beam epitaxy regrowth of pseudomorphic high electron mobility transistors using thin in layer

10.1109/edms.1994.863849 ◽

2005 ◽

Author(s):

C.K. Peng ◽

W.H. Lan ◽

S.S. Chen ◽

S.L. Tu ◽

S.J. Yang

Keyword(s):

Molecular Beam Epitaxy ◽

Electron Mobility ◽

Molecular Beam ◽

High Electron ◽

High Electron Mobility ◽

Algan/Gan High-Electron-Mobility Transistors Grown By Ammonia Source Molecular Beam Epitaxy

Gallium Nitride (GaN) ◽

10.4324/b19387-2 ◽

2017 ◽

pp. 45-61

Author(s):

Yvon Cordier

Keyword(s):

Molecular Beam Epitaxy ◽

Electron Mobility ◽

Molecular Beam ◽

High Electron ◽

High Electron Mobility ◽

Ammonia Source

Demonstration of AlGaN/GaN High-Electron-Mobility Transistors on 100-mm-Diameter Si(111) by Ammonia Molecular Beam Epitaxy

Applied Physics Express ◽

10.1143/apex.5.091003 ◽

2012 ◽

Vol 5 (9) ◽

pp. 091003 ◽

Cited By ~ 15

Author(s):

Nethaji Dharmarasu ◽

K. Radhakrishnan ◽

Manvi Agrawal ◽

Lingaparthi Ravikiran ◽

Subramaniam Arulkumaran ◽

...

Keyword(s):

Molecular Beam Epitaxy ◽

Electron Mobility ◽

Molecular Beam ◽

High Electron ◽

High Electron Mobility ◽