Homoepitaxial Growth of Diamond Single-Phase Thin Films by Pulsed Laser Ablation of Graphite

2001 ◽  
Vol 40 (Part 2, No. 6A) ◽  
pp. L573-L575 ◽  
Author(s):  
Tsuyoshi Yoshitake ◽  
Takashi Nishiyama ◽  
Kunihito Nagayama
1995 ◽  
Vol 397 ◽  
Author(s):  
V. R. Palkar ◽  
S. C. Purandare ◽  
S. P. Pai ◽  
S. Chattopadhyay ◽  
P. R. Apte ◽  
...  

ABSTRACTWe are reporting the successful deposition of single phase c-axis oriented ferroelectric thin films of PbTiO3 on Si (100) by pulsed laser deposition. It is shown that the formation of non ferroelectric Pb2Ti2O6 phase at the interface could be avoided by raising the substrate temperature sufficiently high. The film deposition conditions are optimized so as to achieve better ferroelectric properties.


Author(s):  
M. Grant Norton ◽  
C. Barry Carter

Pulsed-laser ablation has been widely used to produce high-quality thin films of YBa2Cu3O7-δ on a range of substrate materials. The nonequilibrium nature of the process allows congruent deposition of oxides with complex stoichiometrics. In the high power density regime produced by the UV excimer lasers the ablated species includes a mixture of neutral atoms, molecules and ions. All these species play an important role in thin-film deposition. However, changes in the deposition parameters have been shown to affect the microstructure of thin YBa2Cu3O7-δ films. The formation of metastable configurations is possible because at the low substrate temperatures used, only shortrange rearrangement on the substrate surface can occur. The parameters associated directly with the laser ablation process, those determining the nature of the process, e g. thermal or nonthermal volatilization, have been classified as ‘primary parameters'. Other parameters may also affect the microstructure of the thin film. In this paper, the effects of these ‘secondary parameters' on the microstructure of YBa2Cu3O7-δ films will be discussed. Examples of 'secondary parameters' include the substrate temperature and the oxygen partial pressure during deposition.


2001 ◽  
Vol 177 (1-2) ◽  
pp. 73-77 ◽  
Author(s):  
K.T Hillie ◽  
C Curren ◽  
H.C Swart

Ionics ◽  
2007 ◽  
Vol 13 (5) ◽  
pp. 343-348 ◽  
Author(s):  
P. Kuppusami ◽  
K. Muthukkumaran ◽  
R. Divakar ◽  
R. Kesavamoorthy ◽  
E. Mohandas ◽  
...  

2010 ◽  
Vol 31 (4) ◽  
pp. 1746-1748
Author(s):  
Ren-Guo Song ◽  
Fang-Er Yang ◽  
Xiao-Hong Weng ◽  
Wang-Zhao He

2012 ◽  
Vol 40 (11) ◽  
pp. 2850-2852 ◽  
Author(s):  
Zihao Ouyang ◽  
Tae-Seung Cho ◽  
David N. Ruzic

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