C-Axis Oriented Ferroelectric thin Films of PbtiO3 on Silicon Substrate by Pulsed Laser Ablation

1995 ◽  
Vol 397 ◽  
Author(s):  
V. R. Palkar ◽  
S. C. Purandare ◽  
S. P. Pai ◽  
S. Chattopadhyay ◽  
P. R. Apte ◽  
...  
Keyword(s):  
Thin Films ◽  
Laser Ablation ◽  
Single Phase ◽  
Ferroelectric Properties ◽  
Pulsed Laser ◽  
Pulsed Laser Ablation ◽  
Film Deposition ◽  
Ferroelectric Thin Films ◽  
Laser Deposition ◽  
Deposition Conditions

ABSTRACTWe are reporting the successful deposition of single phase c-axis oriented ferroelectric thin films of PbTiO3 on Si (100) by pulsed laser deposition. It is shown that the formation of non ferroelectric Pb2Ti2O6 phase at the interface could be avoided by raising the substrate temperature sufficiently high. The film deposition conditions are optimized so as to achieve better ferroelectric properties.

Observations on the growth of YBa2Cu3O7-δ thin films on MgO by pulsed-laser ablation

1991 ◽  
Vol 49 ◽  
pp. 1068-1069
Author(s):  
M. Grant Norton ◽  
C. Barry Carter
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Laser Ablation ◽  
Substrate Surface ◽  
Pulsed Laser ◽  
Pulsed Laser Ablation ◽  
Thin Film Deposition ◽  
Film Deposition ◽  
Laser Ablation Process ◽  
Deposition Parameters

Pulsed-laser ablation has been widely used to produce high-quality thin films of YBa2Cu3O7-δ on a range of substrate materials. The nonequilibrium nature of the process allows congruent deposition of oxides with complex stoichiometrics. In the high power density regime produced by the UV excimer lasers the ablated species includes a mixture of neutral atoms, molecules and ions. All these species play an important role in thin-film deposition. However, changes in the deposition parameters have been shown to affect the microstructure of thin YBa2Cu3O7-δ films. The formation of metastable configurations is possible because at the low substrate temperatures used, only shortrange rearrangement on the substrate surface can occur. The parameters associated directly with the laser ablation process, those determining the nature of the process, e g. thermal or nonthermal volatilization, have been classified as ‘primary parameters'. Other parameters may also affect the microstructure of the thin film. In this paper, the effects of these ‘secondary parameters' on the microstructure of YBa2Cu3O7-δ films will be discussed. Examples of 'secondary parameters' include the substrate temperature and the oxygen partial pressure during deposition.

Ferroelectric Properties and Microstructures of Bi4-xDyxTi3O12 Thin Films

2014 ◽  
Vol 633 ◽  
pp. 378-381
Author(s):  
Bei Li ◽  
X.B. Liu ◽  
M. Chen ◽  
X.A. Mei
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Layered Structure ◽  
Remanent Polarization ◽  
Single Phase ◽  
Ferroelectric Properties ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Deposition Technique ◽  
Si Substrates

Dy-doped Bi4Ti3O12 thin films were fabricated on Pt/Ti/SiO2/Si substrates by pulsed laser deposition technique, and the structures and electrical properties of the films were investigated. XRD results indicated that all of Bi4-xDyxTi3O12 films consisted of single phase of a bismuth-layered structure with well-developed rod-like grains. The remanent polarization ( Pr ) and coercive field (Ec) of the Bi4-xDyxTi3O12 Film with x=0.75 were 25μC/cm2 and 85KV/cm , respectively.

Homoepitaxial Growth of Diamond Single-Phase Thin Films by Pulsed Laser Ablation of Graphite

2001 ◽  
Vol 40 (Part 2, No. 6A) ◽  
pp. L573-L575 ◽  
Author(s):  
Tsuyoshi Yoshitake ◽  
Takashi Nishiyama ◽  
Kunihito Nagayama
Keyword(s):  
Thin Films ◽  
Laser Ablation ◽  
Single Phase ◽  
Pulsed Laser ◽  
Pulsed Laser Ablation ◽  
Homoepitaxial Growth

Pulsed laser ablation synthesis and ferroelectric properties of SrBi2Ta2O9 thin films

1998 ◽  
Vol 20 (1-4) ◽  
pp. 79-86 ◽  
Author(s):  
Pingxiong Yang ◽  
Lirong Zheng ◽  
Chenglu Lin ◽  
Wenbiao Wu ◽  
Masanori Okuyama
Keyword(s):  
Thin Films ◽  
Laser Ablation ◽  
Ferroelectric Properties ◽  
Pulsed Laser ◽  
Pulsed Laser Ablation

Pulsed laser-ablation deposition of thin films of molybdenum silicide and its properties as a conducting barrier for ferroelectric random-access memory technology

1999 ◽  
Vol 14 (3) ◽  
pp. 940-947 ◽  
Author(s):  
Sucharita Madhukar ◽  
S. Aggarwal ◽  
A. M. Dhote ◽  
R. Ramesh ◽  
S. B. Samavedam ◽  
...  
Keyword(s):  
Thin Films ◽  
Laser Ablation ◽  
Lead Zirconate Titanate ◽  
Ferroelectric Properties ◽  
Random Access ◽  
Pulsed Laser ◽  
Pulsed Laser Ablation ◽  
Lead Zirconate ◽  
Capacitive Coupling ◽  
Molybdenum Silicide

We report on the feasibility of using molybdenum silicide as a conducting barrier for integration of ferroelectric lead zirconate titanate capacitors on Si. Thin films of MoSi2 were deposited by pulsed laser-ablation deposition (PLD). The silicide films showed a structural transition from amorphous to orthorhombic to tetragonal phase as the temperature of deposition was changed from room temperature to 900 °C. The four-probe resistivity and surface roughness of the films decreased with an increase in the deposition temperature and crystallinity of the phase. Ferroelectric (La, Sr)CoO3/Pb(Nb, Zr, Ti)O3/(La, Sr)CoO3 capacitors were grown on Si/poly Si/MoSi2, and Si/poly Si/MoSi2/Pt structures. Transmission electron microscopy (TEM) studies of the MoSi2/LSCO and MoSi2/Pt/LSCO heterostructures indicated the formation of a thin layer of SiO2. In the case of Pt/MoSi2, Pt reacts with the silicide and forms PtSi, consuming the entire platinum layer and, thus, makes it unsuitable as a composite barrier. Electrical testing of the LSCO/PNZT/LSCO capacitors through capacitive coupling showed desirable ferroelectric properties on these substrates.

c‐axis oriented ferroelectric thin films of PbTiO3 on Si by pulsed laser ablation

1996 ◽  
Vol 68 (11) ◽  
pp. 1582-1584 ◽  
Author(s):  
V. R. Palkar ◽  
S. C. Purandare ◽  
S. P. Pai ◽  
S. Chattopadhyay ◽  
P. R. Apte ◽  
...  
Keyword(s):  
Thin Films ◽  
Laser Ablation ◽  
Pulsed Laser ◽  
Pulsed Laser Ablation ◽  
Ferroelectric Thin Films

Investigation of the Characteristics of Ferroelectric Thin Films Deposited by Pulsed Laser Ablation

1994 ◽  
Vol 361 ◽  
Author(s):  
S. Sengupta ◽  
D.P. Vijay ◽  
S.B. Desu
Keyword(s):  
Thin Films ◽  
Laser Ablation ◽  
Oxygen Pressure ◽  
Pulsed Laser ◽  
Pulsed Laser Ablation ◽  
Secondary Phase ◽  
Ferroelectric Thin Films ◽  
Laser Ablation Method ◽  
Target Composition ◽  
Lower Oxygen

ABSTRACTFerroelectric thin films of barium strontium titanate (BSTO) have been deposited on bare and metallized substrates by pulsed laser ablation method under different oxygen ambients (150 mT and 50 mT). Under an oxygen pressure of 150 mT, the film composition was similar to that of its ablation target composition, viz. Ba0.4TiO3. However, when the films were deposited under the lower oxygen pressure, x-ray diffraction studies showed the presence of a secondary phase. The electrical characteristics of the films were measured to examine the effect of the stoichiometry on the dielectric constant and tunability. The results of this study will be presented.

scholarly journals Orientation dependent ferroelectric properties in samarium doped bismuth titanate thin films grown by the pulsed-laser-ablation method

2006 ◽  
Vol 89 (3) ◽  
pp. 032901 ◽  
Author(s):  
Zhenxiang Cheng ◽  
Chinna Venkatasamy Kannan ◽  
Kiyoshi Ozawa ◽  
Hideo Kimura ◽  
Xiaolin Wang
Keyword(s):  
Thin Films ◽  
Laser Ablation ◽  
Bismuth Titanate ◽  
Ferroelectric Properties ◽  
Pulsed Laser ◽  
Pulsed Laser Ablation ◽  
Laser Ablation Method
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