Optoelectronic and Structural Properties of Undoped Microcrystalline Silicon Thin Films: Dependence on Substrate Temperature in Very High Frequency Plasma Enhanced Chemical Vapor Deposition Technique

2004 ◽  
Vol 43 (6A) ◽  
pp. 3269-3274 ◽  
Author(s):  
Chandan Das ◽  
Tapati Jana ◽  
Swati Ray
Keyword(s):  
Vapor Deposition ◽  
High Frequency ◽  
Chemical Vapor ◽  
Microcrystalline Silicon ◽  
Very High Frequency ◽  
Silicon Thin Films ◽  
High Frequency Plasma ◽  
Frequency Plasma ◽  
Vapor Deposition Technique ◽  
Very High

MICROCRYSTALLINE SILICON FILMS PREPARED BY VERY HIGH FREQUENCY PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION AT LOW TEMPERATURE

2005 ◽  
Vol 19 (18) ◽  
pp. 3013-3020
Author(s):  
ZHIMENG WU ◽  
QINGSONG LEI ◽  
JIANPING XI ◽  
ZHAO YING ◽  
XINHUA GENG
Keyword(s):  
Vapor Deposition ◽  
High Frequency ◽  
Chemical Vapor ◽  
Silicon Films ◽  
Microcrystalline Silicon ◽  
Very High Frequency ◽  
High Frequency Plasma ◽  
Frequency Plasma ◽  
Silane Concentration ◽  
Very High

Intrinsic microcrystalline silicon films have been prepared using very high frequency plasma enhanced chemical vapor deposition (VHF-PECVD) at low temperature. The effect of silane concentration and power density on the deposition rate and crystallinity of silicon films has been investigated. The Raman spectra indicates a phase transition from microcrystalline to amorphous phase at silane concentrations of higher than 6%. A growth rate of microcrystalline films as high as 6.6 A/s is achieved at a silane concentration of 6% and the crystalline volume fraction Xc is 39%. We have also observed that the decrease of power density shifts the phase transition to low silane concentration.

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