High-Performance Polycrystalline Silicon Thin-Film Transistors Fabricated by High-Temperature Process with Excimer Laser Annealing

2004 ◽  
Vol 43 (6A) ◽  
pp. 3293-3296 ◽  
Author(s):  
Hiroaki Jiroku ◽  
Mitsutoshi Miyasaka ◽  
Satoshi Inoue ◽  
Yoshifumi Tsunekawa ◽  
Tatsuya Shimoda
Keyword(s):  
Thin Film ◽  
High Temperature ◽  
Excimer Laser ◽  
Thin Film Transistors ◽  
Polycrystalline Silicon ◽  
High Performance ◽  
Laser Annealing ◽  
Silicon Thin Film ◽  
Excimer Laser Annealing ◽  
High Temperature Process

Effect of excimer laser annealing on the structural and electrical properties of polycrystalline silicon thin-film transistors

1999 ◽  
Vol 86 (8) ◽  
pp. 4600-4606 ◽  
Author(s):  
C. T. Angelis ◽  
C. A. Dimitriadis ◽  
M. Miyasaka ◽  
F. V. Farmakis ◽  
G. Kamarinos ◽  
...  
Keyword(s):  
Thin Film ◽  
Electrical Properties ◽  
Excimer Laser ◽  
Thin Film Transistors ◽  
Polycrystalline Silicon ◽  
Laser Annealing ◽  
Silicon Thin Film ◽  
Excimer Laser Annealing ◽  
Structural And Electrical Properties

High-performance polycrystalline silicon TFTs fabricated by high-temperature process with excimer laser annealing

2003 ◽  
Author(s):  
Hiroaki Jiroku ◽  
Mitsutoshi Miyasaka ◽  
Satoshi Inoue ◽  
Yoshifumi Tsunekawa ◽  
Tatsuya Shimoda
Keyword(s):  
High Temperature ◽  
Excimer Laser ◽  
Polycrystalline Silicon ◽  
High Performance ◽  
Laser Annealing ◽  
Excimer Laser Annealing ◽  
High Temperature Process

On-Chip Bottom-Gate Polysilicon and Amorphous Silicon Thin-Film Transistors Using Excimer Laser Annealing

1990 ◽  
Vol 29 (Part 2, No. 10) ◽  
pp. L1775-L1777 ◽  
Author(s):  
Kazuhiro Shimizu ◽  
Osamu Sugiura ◽  
Masakiyo Matsumura
Keyword(s):  
Thin Film ◽  
Amorphous Silicon ◽  
Excimer Laser ◽  
Thin Film Transistors ◽  
Laser Annealing ◽  
Silicon Thin Film ◽  
Excimer Laser Annealing ◽  
On Chip ◽  
Bottom Gate

High-Performance Excimer-Laser-Crystallized Polycrystalline Silicon Thin-Film Transistors with the Pre-Patterned Recessed Channel

2012 ◽  
Vol 51 ◽  
pp. 066502
Author(s):  
Chao-Lung Wang ◽  
Huang-Chung Cheng ◽  
I-Che Lee ◽  
Chun-Yu Wu ◽  
Yu-Ting Cheng ◽  
...  
Keyword(s):  
Thin Film ◽  
Excimer Laser ◽  
Thin Film Transistors ◽  
Polycrystalline Silicon ◽  
High Performance ◽  
Silicon Thin Film ◽  
Recessed Channel

Poly-Silicon Thin-Film Transistors with Uniform Performance Fabricated by Excimer Laser Annealing

1993 ◽  
Vol 32 (Part 1, No. 1B) ◽  
pp. 474-481 ◽  
Author(s):  
Ichirou Asai ◽  
Noriji Kato ◽  
Mario Fuse ◽  
Toshihisa Hamano
Keyword(s):  
Thin Film ◽  
Excimer Laser ◽  
Thin Film Transistors ◽  
Laser Annealing ◽  
Silicon Thin Film ◽  
Excimer Laser Annealing ◽  
Poly Silicon

Bottom-Gate Thin-Film Transistors Fabricated by Excimer Laser Annealing

2013 ◽  
Vol 811 ◽  
pp. 177-180
Author(s):  
Jyh Liang Wang ◽  
Chun Chien Tsai ◽  
Chuan Chou Hwang ◽  
Tsang Yen Hsieh
Keyword(s):  
Thin Film ◽  
Excimer Laser ◽  
Thin Film Transistors ◽  
High Performance ◽  
Laser Annealing ◽  
Electrical Characteristics ◽  
Laser Crystallization ◽  
Excimer Laser Annealing ◽  
Excimer Laser Crystallization ◽  
Bottom Gate

High performance and device uniformity n-channel low-temperature poly-silicon (LTPS) bottom-gate (BG) thin film transistors (TFTs) with artificially-controlled lateral grain growth have been performed by excimer laser crystallization (ELC). The BG TFTs (W/L = 1.5 μm/1.5 μm) demonstrate field-effect-mobility of 323 cm2/Vs and high Ion/Ioff of 9.5 × 108. The proposed BG TFTs reveal the superior electrical characteristics, device uniformity, and reliability than conventional top-gate ones.

Sign in / Sign up

Export Citation Format

Share Document