Bottom-Gate Thin-Film Transistors Fabricated by Excimer Laser Annealing
Keyword(s):
High performance and device uniformity n-channel low-temperature poly-silicon (LTPS) bottom-gate (BG) thin film transistors (TFTs) with artificially-controlled lateral grain growth have been performed by excimer laser crystallization (ELC). The BG TFTs (W/L = 1.5 μm/1.5 μm) demonstrate field-effect-mobility of 323 cm2/Vs and high Ion/Ioff of 9.5 × 108. The proposed BG TFTs reveal the superior electrical characteristics, device uniformity, and reliability than conventional top-gate ones.
2007 ◽
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pp. 599-602
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2018 ◽
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2007 ◽
Vol 28
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pp. 1010-1013
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2012 ◽
Vol 12
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pp. 5505-5509
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