Optimum Light Intensity Distribution for Growing Large Si Grains by Phase-Modulated Excimer-Laser Annealing

2004 ◽  
Vol 43 (2) ◽  
pp. 739-744 ◽  
Author(s):  
Masayuki Jyumonji ◽  
Yoshinobu Kimura ◽  
Yukio Taniguchi ◽  
Masato Hiramatsu ◽  
Hiroyuki Ogawa ◽  
...  
Hyomen Kagaku ◽  
2004 ◽  
Vol 25 (9) ◽  
pp. 586-593
Author(s):  
Masayuki JYUMONJI ◽  
Yoshinobu KIMURA ◽  
Yukio TANIGUCHI ◽  
Masato HIRAMATSU ◽  
Masakiyo MATSUMURA

Crystals ◽  
2018 ◽  
Vol 8 (9) ◽  
pp. 335 ◽  
Author(s):  
Wei-Hsiung Tseng ◽  
Diana Juan ◽  
Wei-Cheng Hsiao ◽  
Cheng-Han Chan ◽  
Hsin-Yi Ma ◽  
...  

In this study, our proposed ultraviolet light-emitting diode (UV LED) mosquito-trapping lamp is designed to control diseases brought by insects such as mosquitoes. In order to enable the device to efficiently catch mosquitoes in a wider area, a secondary freeform lens (SFL) is designed for UV LED. The lens is mounted on a 3 W UV LED light bar as a mosquito-trapping lamp of the new UV LED light bar module to achieve axially symmetric light intensity distribution. The special SFL is used to enhance the trapping capabilities of the mosquito-trapping lamp. The results show that when the secondary freeform surface lens is applied to the experimental outdoor UV LED mosquito-trapping lamp, the trapping range can be expanded to 100π·m2 and the captured mosquitoes increased by about 300%.


1995 ◽  
Author(s):  
Keisuke Tsudaka ◽  
Manabu Tomita ◽  
Minoru Sugawara ◽  
Hiroichi Kawahira ◽  
Satoru Nozawa

1992 ◽  
Vol 283 ◽  
Author(s):  
Hiroshi Iwata ◽  
Tomoyuki Nohda ◽  
Satoshi Ishida ◽  
Takashi Kuwahara ◽  
Keiichi Sano ◽  
...  

ABSTRACTThe grain size of phosphorous (P)-doped poly-Si film has been enlarged to about 5000 Å by controlling the solidification velocity of molten Si during ArF excimer laser annealing. The drastically enlarged grain has few defects inside the grain. It has been confirmed that control of the solidification velocity is effective for P-doped poly-Si similar to the case of non-doped poly-Si films. In addition, a sheet resistance of 80 Ω/□ (ρ = 4 × 10-4 Ω · cm) has been achieved for very thin (500 Å) films by recrystallizing PECVD P-doped a-Si films.


2006 ◽  
Vol 45 (4A) ◽  
pp. 2726-2730 ◽  
Author(s):  
Naoya Kawamoto ◽  
Atsushi Masuda ◽  
Naoto Matsuo ◽  
Yasuhiro Seri ◽  
Toshimasa Nishimori ◽  
...  

1998 ◽  
Vol 136 (4) ◽  
pp. 298-305 ◽  
Author(s):  
A.L Stepanov ◽  
D.E Hole ◽  
A.A Bukharaev ◽  
P.D Townsend ◽  
N.I Nurgazizov

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