Thermal Stability of Diamond Photodiodes Using Tungsten Carbide as Schottky Contact

2005 ◽  
Vol 44 (11) ◽  
pp. 7832-7838 ◽  
Author(s):  
Meiyong Liao ◽  
Jose Alvarez ◽  
Yasuo Koide
Keyword(s):  
Thermal Stability ◽  
Tungsten Carbide ◽  
Schottky Contact ◽  
Thermal Stability Of

Microstructure studies of tungsten silicide schottky contacts on Gaas

1987 ◽  
Vol 45 ◽  
pp. 328-329
Author(s):  
Yih-Cheng Shih ◽  
E. L. Wilkie
Keyword(s):  
Thermal Stability ◽  
Field Effect Transistors ◽  
Schottky Contact ◽  
Schottky Contacts ◽  
Excellent Thermal Stability ◽  
Barrier Heights ◽  
Gaas Substrates ◽  
Film Adhesion ◽  
Threshold Voltages ◽  
Thermal Stability Of

Tungsten silicides (WSix) have been successfully used as the gate materials in self-aligned GaAs metal-semiconductor-field- effect transistors (MESFET). Thermal stability of the WSix/GaAs Schottky contact is of major concern since the n+ implanted source/drain regions must be annealed at high temperatures (∼ 800°C). WSi0.6 was considered the best composition to achieve good device performance due to its low stress and excellent thermal stability of the WSix/GaAs interface. The film adhesion and the uniformity in barrier heights and ideality factors of the WSi0.6 films have been improved by depositing a thin layer of pure W as the first layer on GaAs prior to WSi0.6 deposition. Recently WSi0.1 has been used successfully as the gate material in 1x10 μm GaAs FET's on the GaAs substrates which were sputter-cleaned prior to deposition. These GaAs FET's exhibited uniform threshold voltages across a 51 mm wafer with good film adhesion after annealing at 800°C for 10 min.

Schottky contact and the thermal stability of Ni onn‐type GaN

1996 ◽  
Vol 80 (3) ◽  
pp. 1623-1627 ◽  
Author(s):  
J. D. Guo ◽  
F. M. Pan ◽  
M. S. Feng ◽  
R. J. Guo ◽  
P. F. Chou ◽  
...  
Keyword(s):  
Thermal Stability ◽  
Schottky Contact ◽  
Thermal Stability Of

Thermal stability of Mo-based Schottky contact for AlGaN∕GaN HEMT

2005 ◽  
Vol 41 (16) ◽  
pp. 927 ◽  
Author(s):  
A. Sozza ◽  
C. Dua ◽  
E. Morvan ◽  
B. Grimbert ◽  
M.A. di Forte-Poisson ◽  
...  
Keyword(s):  
Thermal Stability ◽  
Schottky Contact ◽  
Gan Hemt ◽  
Thermal Stability Of

Thermal stability of Ti∕Pt∕Cu Schottky contact on InAlAs layer

2006 ◽  
Vol 89 (8) ◽  
pp. 083517 ◽  
Author(s):  
Yi-Chung Lien ◽  
Edward Yi Chang ◽  
Szu-Hung Chen ◽  
Li-Hsin Chu ◽  
Po-Chou Chen ◽  
...  
Keyword(s):  
Thermal Stability ◽  
Schottky Contact ◽  
Thermal Stability Of
Sign in / Sign up

Export Citation Format

Share Document