Resonant Terahertz Photomixing in Integrated High-Electron-Mobility Transistor and Quantum-Well Infrared Photodetector Device

Japanese Journal of Applied Physics ◽

10.1143/jjap.45.3648 ◽

2006 ◽

Vol 45 (4B) ◽

pp. 3648-3651 ◽

Author(s):

Victor Ryzhii ◽

Maxim Ryzhii ◽

Irina Khmyrova ◽

Taiichi Otsuji ◽

Michael S. Shur

Keyword(s):

Quantum Well ◽

Electron Mobility ◽

High Electron Mobility Transistor ◽

High Electron ◽

Infrared Photodetector ◽

High Electron Mobility ◽

Quantum Well Infrared Photodetector ◽

Photodetector Device

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Terahertz Photomixing in Heterostructure Device Based on Integration of High-Electron Mobility Transistor and Quantum-Well Infrared Photodetector

2005 International Topical Meeting on Microwave Photonics ◽

10.1109/mwp.2005.203609 ◽

2005 ◽

Author(s):

V. Ryzhii ◽

M. Ryzhii ◽

I. Khmyrova ◽

T. Otsuji ◽

M.S. Shur

Keyword(s):

Quantum Well ◽

Electron Mobility ◽

High Electron Mobility Transistor ◽

High Electron ◽

Infrared Photodetector ◽

High Electron Mobility ◽

Quantum Well Infrared Photodetector

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Nonmonotonous Electron Mobility in Double Quantum Well Pseudomorphic High Electron Mobility Transistor Structure

2019 Devices for Integrated Circuit (DevIC) ◽

10.1109/devic.2019.8783894 ◽

2019 ◽

Author(s):

Sangita R. Panda ◽

Sudhakar Das ◽

Arttatran Sahu ◽

Ajit Kumar Panda ◽

Trinath Sahu

Keyword(s):

Quantum Well ◽

Electron Mobility ◽

High Electron Mobility Transistor ◽

Double Quantum ◽

High Electron ◽

Transistor Structure ◽

High Electron Mobility ◽

Double Quantum Well

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Structural asymmetry induced nonmonotonic electron mobility in pseudomorphic double quantum well high electron mobility transistor structure

Physica Scripta ◽

10.1088/1402-4896/ab5ba5 ◽

2020 ◽

Vol 95 (5) ◽

pp. 054003

Author(s):

Ajit Kumar Panda ◽

Sangita R Panda ◽

Arttatran Sahu ◽

Sudhakar Das ◽

Trinath Sahu

Keyword(s):

Quantum Well ◽

Electron Mobility ◽

High Electron Mobility Transistor ◽

Double Quantum ◽

High Electron ◽

Transistor Structure ◽

High Electron Mobility ◽

Structural Asymmetry ◽

Double Quantum Well

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One‐dimensional transport in quantum well wire‐high electron mobility transistor

Applied Physics Letters ◽

10.1063/1.97232 ◽

1986 ◽

Vol 49 (25) ◽

pp. 1738-1740 ◽

Author(s):

Perng‐fei Yuh ◽

K. L. Wang

Keyword(s):

Quantum Well ◽

Electron Mobility ◽

High Electron Mobility Transistor ◽

High Electron ◽

High Electron Mobility ◽

One Dimensional ◽

Quantum Well Wire

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Metamorphic InGaAs/InAlAs quantum well structures grown on GaAs substrates for high electron mobility transistor applications

Applied Physics Letters ◽

10.1063/1.122582 ◽

1998 ◽

Vol 73 (19) ◽

pp. 2760-2762 ◽

Author(s):

M. Behet ◽

K. van der Zanden ◽

G. Borghs ◽

A. Behres

Keyword(s):

Quantum Well ◽

Electron Mobility ◽

High Electron Mobility Transistor ◽

High Electron ◽

High Electron Mobility ◽

Quantum Well Structures ◽

Gaas Substrates

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Mobility enhancement by reduced remote impurity scattering in a pseudomorphic In[sub 0.7]Ga[sub 0.3]As/In[sub 0.52]Al[sub 0.48]As quantum well high electron mobility transistor structure with (411)A super-flat interfaces grown by molecular-beam epitaxy

Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena ◽

10.1116/1.1387454 ◽

2001 ◽

Vol 19 (4) ◽

pp. 1515 ◽

Author(s):

I. Watanabe ◽

K. Kanzaki ◽

T. Aoki ◽

T. Kitada ◽

S. Shimomura ◽

...

Keyword(s):

Molecular Beam Epitaxy ◽

Quantum Well ◽

Electron Mobility ◽

Molecular Beam ◽

Impurity Scattering ◽

High Electron Mobility Transistor ◽

High Electron ◽

Transistor Structure ◽

High Electron Mobility

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Room-temperature phototransmittance and photoluminescence characterization of the AlGaAs/InGaAs/GaAs pseudomorphic high electron mobility transistor structures with varied quantum well compositional profiles

Semiconductor Science and Technology ◽

10.1088/0268-1242/14/1/017 ◽

1999 ◽

Vol 14 (1) ◽

pp. 103-109 ◽

Author(s):

D Y Lin ◽

Y S Huang ◽

K K Tiong ◽

F H Pollak ◽

K R Evans

Keyword(s):

Quantum Well ◽

Electron Mobility ◽

Room Temperature ◽

High Electron Mobility Transistor ◽

High Electron ◽

High Electron Mobility

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Nonlinear electron transport in GaAs/InGaAs asymmetric double-quantum-well pseudomorphic high-electron-mobility transistor structure

Japanese Journal of Applied Physics ◽

10.7567/jjap.56.064101 ◽

2017 ◽

Vol 56 (6) ◽

pp. 064101 ◽

Author(s):

Meryleen Mohapatra ◽

Arttatran Sahu ◽

Sangita R. Panda ◽

Sudhakar Das ◽

Trinath Sahu ◽

...

Keyword(s):

Electron Transport ◽

Quantum Well ◽

Electron Mobility ◽

High Electron Mobility Transistor ◽

Double Quantum ◽

High Electron ◽

Transistor Structure ◽

High Electron Mobility ◽

Double Quantum Well

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Molecular beam epitaxy growth of InP-based lattice-matched high electron mobility transistor structures having a modified quantum-well profile due to AlxGayIn1 − x − yAs(x + y = 0.47−8) buffer layer

Journal of Crystal Growth ◽

10.1016/s0022-0248(96)00897-4 ◽

1997 ◽

Vol 177 (1-2) ◽

pp. 28-32

Author(s):

H.G. Lee ◽

S.K. Hong ◽

S.G. Kim ◽

K.S. Lee ◽

H.M. Kim ◽

...

Keyword(s):

Molecular Beam Epitaxy ◽

Quantum Well ◽

Buffer Layer ◽

Electron Mobility ◽

Molecular Beam ◽

High Electron Mobility Transistor ◽

Molecular Beam Epitaxy Growth ◽

High Electron ◽

High Electron Mobility ◽

Lattice Matched

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Materials characteristics of pseudomorphic high electron mobility transistor structures with InxGa1−xas single quantum well and GaAs-InxGa1−xas (0.25 < x < 0.4) thin strained superlattice active layers

Journal of Electronic Materials ◽

10.1007/bf02651271 ◽

1990 ◽

Vol 19 (6) ◽

pp. 509-513 ◽

Author(s):

J. M. Ballingall ◽

Pin Ho ◽

P. A. Martin ◽

G. J. Tessmer ◽

T. H. Yu ◽

...

Keyword(s):

Quantum Well ◽

Electron Mobility ◽

High Electron Mobility Transistor ◽

High Electron ◽

Single Quantum ◽

Single Quantum Well ◽

High Electron Mobility ◽

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