2019 Devices for Integrated Circuit (DevIC)
Latest Publications

TOTAL DOCUMENTS

119

(FIVE YEARS 119)

H-INDEX

3

(FIVE YEARS 3)

Published By IEEE

9781538667224

Latest Documents Most Cited Documents Contributed Authors Related Sources Related Keywords

Extensive analysis of band alignment engineering on the open circuit voltage performance of a GaAs/GaSb hetero structure solar cell

2019 Devices for Integrated Circuit (DevIC) ◽

10.1109/devic.2019.8783978 ◽

2019 ◽

Author(s):

Girija Shankar Sahoo ◽

Guru Prasad Mishra

Keyword(s):

Open Circuit Voltage ◽

Open Circuit ◽

Band Alignment ◽

Hetero Structure ◽

Extensive Analysis ◽

Voltage Performance

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Comparative Investigation of DSG-MOSFET and Some analysis on its Performance

2019 Devices for Integrated Circuit (DevIC) ◽

10.1109/devic.2019.8783287 ◽

2019 ◽

Author(s):

Babita Kumari ◽

Kaushik Mazumdar ◽

Aniruddha Ghosal

Keyword(s):

Comparative Investigation

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Set point weighted modified Smith predictor for delay dominated integrating processes

2019 Devices for Integrated Circuit (DevIC) ◽

10.1109/devic.2019.8783297 ◽

2019 ◽

Author(s):

Somak Karan ◽

Chanchal Dey

Keyword(s):

Smith Predictor ◽

Set Point ◽

Modified Smith Predictor

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Cell thickness optimization of dual junction InGaP/GaAs solar cell against temperature variation

2019 Devices for Integrated Circuit (DevIC) ◽

10.1109/devic.2019.8783736 ◽

2019 ◽

Author(s):

Shingmila Hungyo ◽

Khomdram Jolson Singh ◽

Rudra Sankar Dhar

Keyword(s):

Temperature Variation ◽

Thickness Optimization ◽

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Performance Prediction of Stacked Nanowire Transistors in the Presence of Random Discrete Dopants and Metal Gate Granularity

2019 Devices for Integrated Circuit (DevIC) ◽

10.1109/devic.2019.8783687 ◽

2019 ◽

Author(s):

S. Dey ◽

E. Mohapatra ◽

J. Jena ◽

S. Das ◽

T. P. Dash ◽

...

Keyword(s):

Performance Prediction ◽

Nanowire Transistors ◽

Random Discrete Dopants

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Vertically-Stacked Silicon Nanosheet Field Effect Transistors at 3nm Technology Nodes

2019 Devices for Integrated Circuit (DevIC) ◽

10.1109/devic.2019.8783300 ◽

2019 ◽

Author(s):

T.P. Dash ◽

S. Dey ◽

E. Mohapatra ◽

S. Das ◽

J. Jena ◽

...

Keyword(s):

Field Effect ◽

Field Effect Transistors ◽

Technology Nodes

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A Novel Driver less SRAM with Indirect Read for Low Energy Consumption and Read Noise Elimination

2019 Devices for Integrated Circuit (DevIC) ◽

10.1109/devic.2019.8783644 ◽

2019 ◽

Author(s):

Debasish Nayak ◽

Umakanta Nanda ◽

Prakash Kumar Rout ◽

Sudhansu Mohan Biswal ◽

Dhananjaya Tripthy ◽

...

Keyword(s):

Energy Consumption ◽

Noise Elimination ◽

Low Energy Consumption

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Surface potential based Analytical Modeling of Graded Channel Strained High-k Gate stack Dual-Material Double Gate MOSFET

2019 Devices for Integrated Circuit (DevIC) ◽

10.1109/devic.2019.8783284 ◽

2019 ◽

Author(s):

Pritha Banerjee ◽

Priyanka Saha ◽

Dinesh Kumar Dash ◽

Subir Kumar Sarkar

Keyword(s):

Surface Potential ◽

Analytical Modeling ◽

Double Gate ◽

High K ◽

Double Gate Mosfet ◽

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A Proposed High-k Dielectric Based Thin Film Transistor for Next Generation Backplane Display Technology

2019 Devices for Integrated Circuit (DevIC) ◽

10.1109/devic.2019.8783702 ◽

2019 ◽

Author(s):

Abhishek Kumar Singh ◽

Ashutosh Kumar Dikshit ◽

Brahmdutta Dixit ◽

V.V. Kharche ◽

Kamal ◽

...

Keyword(s):

Thin Film ◽

Thin Film Transistor ◽

Next Generation ◽

High K ◽

Display Technology ◽

High K Dielectric

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Analytical Threshold Voltage Model of Schottky-source/drain (Schottky-S/D) double gate-all-around (DGAA) Field-Effect-Transistors (FETs)

2019 Devices for Integrated Circuit (DevIC) ◽

10.1109/devic.2019.8783617 ◽

2019 ◽

Author(s):

Arun Kumar ◽

P.S.T.N. Srinivas ◽

Pramod Kumar Tiwari

Keyword(s):

Threshold Voltage ◽

Field Effect ◽

Field Effect Transistors ◽

Double Gate ◽

Threshold Voltage Model

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