High-Detectivity Perovskite Photodetector Using Combustion-Processed NiOx as p-Type Buffer Layer

We fabricated a photodetector device consisting of ITO/NiOx/Perovskite/PC60BM/BCP/Ag. The NiOx layer was deposited using the sol–gel and combustion processes. Combustion-processed NiOx films have advantages such as low annealing temperature, improved perovskite film quality, and better photodetector performance compared to the sol–gel processed NiOx film. The improved film quality, improved charge transfer, and reduced dark current of the device using combustion-processed NiOx film were investigated by measuring the current–voltage characteristics, transient photocurrent, and impedance analysis. The photodetector using the combustion-processed NiOx achieved a high detectivity of 1.20×1013 Jones and bandwidth of over 2 MHz at -0.1 V and 550 nm.

Gate tunable self-powered few-layer black phosphorus broadband photodetector

Due to the giant Stark effect in few-layer black phosphorus (BP), a self-powered and gate-controlled pure few-layer BP based photodetector device is proposed, which can cover the photodetection range from mid-infrared range (MIR) to far-infrared range (FIR).

Organic–inorganic hybrid (CH3NH3)2FeCuI4Cl2 and (CH3NH3)2InCuI6 for ultraviolet light photodetectors

In this study, we fabricate photodetector device based on organic–inorganic hybrid (CH3NH3)2FeCuI4Cl2 (MA2FeCuI4Cl2) and (CH3NH3)2InCuI6 (MA2InCuI6) for the first time.

A Novel Phototransistor Device with Dual Active Layers Composited of CsPbBr3 and ZnO Quantum Dots

Taking advantage of a large light absorption coefficient, long charge carrier diffusion length and low-cost solution processing, all-inorganic halides perovskite CsPbBr3 quantum dots (QDs) are combined with a ZnO QD film to construct a high-performance photodetector. In this work, a novel photodetector device based on transistor structure with dual active layers composed of CsPbBr3 and ZnO film is proposed. In this structure, CsPbBr3 film functions as the light-absorbing layer and ZnO film acts as the conducting layer. Owing to the high electron mobility and hole-blocking nature of the ZnO QDs film, the photo-induced electron-hole pairs can be separated efficiently. As a result, the device exhibits high performance with response of 43.5 A/W, high detection up to 5.02 × 1011 Jones and on/off ratio of 5.6 × 104 under 365 nm light illumination. Compared with the ZnO-only phototransistor (the photodetector with the structure of transistor) the performance of the CsPbBr3 phototransistor showed significant improvement, which is superior to the majority of photodetectors prepared by perovskite. This work demonstrates that the ZnO QDs film can be applied in the photodetector device as a functional conducting layer, and we believe that the hybrid CsPbBr3/ZnO phototransistor would promote the development of low-cost and high-performance photodetectors.