Analysis of Low Metallic Contamination on Silicon Wafer Surfaces by Vapor-Phase Treatment and Total Reflection X-ray Fluorescence Analysis

2006 ◽  
Vol 45 (12) ◽  
pp. 9037-9043 ◽  
Author(s):  
Ayako Shimazaki ◽  
Kunihiro Miyazaki ◽  
Tsuyoshi Matsumura ◽  
Shoko Ito
2004 ◽  
Vol 19 (1) ◽  
pp. 81-86 ◽  
Author(s):  
S. Török ◽  
J. Osán ◽  
B. Beckhoff ◽  
G. Ulm

Total reflection X-ray fluorescence analysis (TXRF) using monochromatized undulator radiation in the PTB radiometry laboratory at the synchrotron radiation facility BESSY II has been employed to investigate the chemical state of nitrogen compounds in aerosols. The aerosol samples of different size fractions were deposited on silicon wafer surfaces in a May impactor. Using a thin window Si(Li) detector, TXRF detection limits for nitrogen are in the upper fg and lower pg range. Taking advantage of the tunability of monochromatized undulator radiation, the near edge X-ray absorption fine structure (NEXAFS) could be combined with TXRF analysis, allowing for the speciation of the aerosols at the nitrogen K absorption edge. Such low detection limits enable an analysis of aerosol samples taken in 10 min with acceptable accuracy. Applicability of the technique to real aerosol samples has been used to compare nitrogen oxidation state in suburban and rural aerosols


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