Large Coulomb-Blockade Oscillations and Negative Differential Conductance in Silicon Single-Electron Transistors with [100]- and [110]-Directed Channels at Room Temperature

2007 ◽  
Vol 46 (1) ◽  
pp. 24-27 ◽  
Author(s):  
Masaharu Kobayashi ◽  
Toshiro Hiramoto
Keyword(s):  
Coulomb Blockade ◽  
Room Temperature ◽  
Single Electron ◽  
Differential Conductance ◽  
Single Electron Transistors ◽  
Negative Differential Conductance ◽  
Electron Transistors

Nano-Scale Silicon Quantum Dot-Based Single-Electron Transistors and Their Application to Design of Analog-to-Digital Convertors at Room Temperature

2017 ◽  
Vol 26 (12) ◽  
pp. 1750201
Author(s):  
Hamed Aminzadeh ◽  
Mohammad Ali Dashti ◽  
Mohammad Miralaei
Keyword(s):  
Quantum Dot ◽  
Coulomb Blockade ◽  
Room Temperature ◽  
Symmetric Functions ◽  
Single Electron ◽  
Stable Operation ◽  
Single Electron Transistors ◽  
Analog To Digital ◽  
Temperature Range ◽  
Electron Transistors

Room-temperature analog-to-digital converters (ADCs) based on nanoscale silicon (Si) quantum dot (QD)-based single-electron transistors (SETs) can be very attractive for high-speed processors embedded in future generation nanosystems. This paper focuses on the design and modeling of advanced single-electron converters suited for operation at room temperature. In contrast to conventional SETs with metallic QD, the use of sub-10-nm Si QD results in stable operation at room temperature, as the observable Coulomb blockade regime covers effectively the higher temperature range. Si QD-based SETs are also fully compatible with advanced CMOS technology and they can be manufactured using routine nanofabrication steps. At first, we present the principles of operation of Si SETs used for room-temperature operation. Possible flash-type ADC architectures are then investigated and the design considerations of possible Coulomb oscillation regimes are addressed. A modified design procedure is then introduced for [Formula: see text]-bit SET-based ADCs, and validated through simulation of a 3-bit ADC with a sampling frequency of 5 GS/s. The ADC core is comprised from a capacitive signal divider followed by three periodic symmetric functions (PSFs). Simulation results demonstrate the stability of output signals at the room-temperature range.

Room temperature Coulomb blockade effects in Au nanocluster/pentacene single electron transistors

2015 ◽  
Vol 26 (35) ◽  
pp. 355204 ◽  
Author(s):  
Haisheng Zheng ◽  
Mohamed Asbahi ◽  
Somik Mukherjee ◽  
Cherian J Mathai ◽  
Keshab Gangopadhyay ◽  
...  
Keyword(s):  
Coulomb Blockade ◽  
Room Temperature ◽  
Single Electron ◽  
Single Electron Transistors ◽  
Electron Transistors

Application of negative differential conductance in Al/AlOx single-electron transistors for background charge characterization

2010 ◽  
Vol 96 (4) ◽  
pp. 042114 ◽  
Author(s):  
Hubert C. George ◽  
Mathieu Pierre ◽  
Xavier Jehl ◽  
Alexei O. Orlov ◽  
Marc Sanquer ◽  
...  
Keyword(s):  
Single Electron ◽  
Differential Conductance ◽  
Single Electron Transistors ◽  
Negative Differential Conductance ◽  
Background Charge ◽  
Electron Transistors

scholarly journals Excited states and quantum confinement in room temperature few nanometre scale silicon single electron transistors

2017 ◽  
Vol 28 (12) ◽  
pp. 125208 ◽  
Author(s):  
Zahid A K Durrani ◽  
Mervyn E Jones ◽  
Chen Wang ◽  
Dixi Liu ◽  
Jonathan Griffiths
Keyword(s):  
Excited States ◽  
Quantum Confinement ◽  
Room Temperature ◽  
Single Electron ◽  
Single Electron Transistors ◽  
Electron Transistors
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