International Electron Devices Meeting. IEDM Technical Digest
Latest Publications

TOTAL DOCUMENTS

218

(FIVE YEARS 0)

H-INDEX

(FIVE YEARS 0)

Published By IEEE

0780341007

Latest Documents Most Cited Documents Contributed Authors Related Sources Related Keywords

A 1 million-cell 2.0-mΩ 30-V TrenchFET utilizing 32 Mcell/in/sup 2/ density with distributed voltage clamping

International Electron Devices Meeting. IEDM Technical Digest ◽

10.1109/iedm.1997.650400 ◽

2002 ◽

Cited By ~ 15

Author(s):

R.K. Williams ◽

W. Grabowski ◽

M. Darwish ◽

M. Chang ◽

H. Yilmaz ◽

...

Keyword(s):

Voltage Clamping

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A salicide-bridged trench capacitor with a double-sacrificial-Si/sub 3/N/sub 4/-sidewall (DSS) for high-performance logic-embedded DRAMs

International Electron Devices Meeting. IEDM Technical Digest ◽

10.1109/iedm.1997.649450 ◽

2002 ◽

Cited By ~ 4

Author(s):

M. Togo ◽

S. Iwao ◽

H. Nobusawa ◽

M. Hamada ◽

K. Yoshida ◽

...

Keyword(s):

High Performance

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SOI floating-body, device and circuit issues

International Electron Devices Meeting. IEDM Technical Digest ◽

10.1109/iedm.1997.650411 ◽

2002 ◽

Cited By ~ 13

Author(s):

J. Gautier ◽

M.M. Pelella ◽

J.G. Fossum

Keyword(s):

Floating Body

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Short wavelength light emitting diodes in Al/sub 0.4/Ga/sub 0.6/P/GaP quantum wells

International Electron Devices Meeting. IEDM Technical Digest ◽

10.1109/iedm.1997.650408 ◽

2002 ◽

Author(s):

M. Gerhold ◽

K. Kamath ◽

P. Bhattacharya

Keyword(s):

Quantum Wells ◽

Short Wavelength ◽

Light Emitting Diodes ◽

Light Emitting ◽

Short Wavelength Light ◽

Wavelength Light

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Room temperature Nb/Nb oxide-based single-electron transistors

International Electron Devices Meeting. IEDM Technical Digest ◽

10.1109/iedm.1997.650302 ◽

2002 ◽

Cited By ~ 3

Author(s):

J.-I. Shirakashi ◽

K. Matsumoto ◽

N. Miura ◽

M. Konagai

Keyword(s):

Room Temperature ◽

Single Electron ◽

Single Electron Transistors ◽

Electron Transistors

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Fmax enhancement of dynamic threshold-voltage MOSFET (DTMOS) under ultra-low supply voltage

International Electron Devices Meeting. IEDM Technical Digest ◽

10.1109/iedm.1997.650415 ◽

2002 ◽

Cited By ~ 16

Author(s):

T. Tanaka ◽

Y. Momiyama ◽

T. Sugii

Keyword(s):

Threshold Voltage ◽

Supply Voltage ◽

Dynamic Threshold ◽

Low Supply Voltage

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PLED-planar localised electron devices

International Electron Devices Meeting. IEDM Technical Digest ◽

10.1109/iedm.1997.650303 ◽

2002 ◽

Cited By ~ 11

Author(s):

K. Nakazato ◽

P.J.A. Piotrowicz ◽

D.G. Hasko ◽

H. Ahmed ◽

K. Itoh

Keyword(s):

Electron Devices

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Damage calibration concept and novel B cluster reaction model for B transient enhanced diffusion over thermal process range from 600°C (839 h) to 1100°C (5 s) with various ion implantation doses and energies

International Electron Devices Meeting. IEDM Technical Digest ◽

10.1109/iedm.1997.650433 ◽

2002 ◽

Cited By ~ 5

Author(s):

K. Suzuki ◽

T. Miyashita ◽

Y. Tada ◽

A. Hoefler ◽

N. Strecker ◽

...

Keyword(s):

Ion Implantation ◽

Thermal Process ◽

Reaction Model ◽

Enhanced Diffusion ◽

Transient Enhanced Diffusion ◽

Cluster Reaction

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Advanced 0.5 μm FRAM device technology with full compatibility of half-micron CMOS logic device

International Electron Devices Meeting. IEDM Technical Digest ◽

10.1109/iedm.1997.650459 ◽

2002 ◽

Cited By ~ 12

Author(s):

T. Yamazaki ◽

K.-i. Inoue ◽

H. Miyazawa ◽

M. Nakamura ◽

N. Sashida ◽

...

Keyword(s):

Logic Device ◽

Device Technology

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0.18 μm low voltage/low power RF CMOS with zero Vth analog MOSFETs made by undoped epitaxial channel technique

International Electron Devices Meeting. IEDM Technical Digest ◽

10.1109/iedm.1997.650511 ◽

2002 ◽

Cited By ~ 9

Author(s):

T. Ohguro ◽

H. Naruse ◽

H. Sugaya ◽

E. Morifuji ◽

S. Nakamura ◽

...

Keyword(s):

Low Power ◽

Low Voltage ◽

Rf Cmos

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International Electron Devices Meeting. IEDM Technical DigestLatest Publications

TOTAL DOCUMENTS

H-INDEX

Published By IEEE

A 1 million-cell 2.0-mΩ 30-V TrenchFET utilizing 32 Mcell/in/sup 2/ density with distributed voltage clamping

A salicide-bridged trench capacitor with a double-sacrificial-Si/sub 3/N/sub 4/-sidewall (DSS) for high-performance logic-embedded DRAMs

SOI floating-body, device and circuit issues

Short wavelength light emitting diodes in Al/sub 0.4/Ga/sub 0.6/P/GaP quantum wells

Room temperature Nb/Nb oxide-based single-electron transistors

Fmax enhancement of dynamic threshold-voltage MOSFET (DTMOS) under ultra-low supply voltage

PLED-planar localised electron devices

Damage calibration concept and novel B cluster reaction model for B transient enhanced diffusion over thermal process range from 600°C (839 h) to 1100°C (5 s) with various ion implantation doses and energies

Advanced 0.5 μm FRAM device technology with full compatibility of half-micron CMOS logic device

0.18 μm low voltage/low power RF CMOS with zero Vth analog MOSFETs made by undoped epitaxial channel technique

International Electron Devices Meeting. IEDM Technical Digest
Latest Publications