International Electron Devices Meeting. IEDM Technical Digest
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218
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0780341007
Latest Documents Most Cited Documents Contributed Authors Related Sources Related Keywords

A 1 million-cell 2.0-mΩ 30-V TrenchFET utilizing 32 Mcell/in/sup 2/ density with distributed voltage clamping

2002 ◽  
Author(s):  
R.K. Williams ◽  
W. Grabowski ◽  
M. Darwish ◽  
M. Chang ◽  
H. Yilmaz ◽  
...  
Keyword(s):  
Voltage Clamping

A salicide-bridged trench capacitor with a double-sacrificial-Si/sub 3/N/sub 4/-sidewall (DSS) for high-performance logic-embedded DRAMs

2002 ◽  
Author(s):  
M. Togo ◽  
S. Iwao ◽  
H. Nobusawa ◽  
M. Hamada ◽  
K. Yoshida ◽  
...  
Keyword(s):  
High Performance

SOI floating-body, device and circuit issues

2002 ◽  
Author(s):  
J. Gautier ◽  
M.M. Pelella ◽  
J.G. Fossum
Keyword(s):  
Floating Body

Room temperature Nb/Nb oxide-based single-electron transistors

2002 ◽  
Author(s):  
J.-I. Shirakashi ◽  
K. Matsumoto ◽  
N. Miura ◽  
M. Konagai
Keyword(s):  
Room Temperature ◽  
Single Electron ◽  
Single Electron Transistors ◽  
Electron Transistors

PLED-planar localised electron devices

2002 ◽  
Author(s):  
K. Nakazato ◽  
P.J.A. Piotrowicz ◽  
D.G. Hasko ◽  
H. Ahmed ◽  
K. Itoh
Keyword(s):  
Electron Devices

Advanced 0.5 μm FRAM device technology with full compatibility of half-micron CMOS logic device

2002 ◽  
Author(s):  
T. Yamazaki ◽  
K.-i. Inoue ◽  
H. Miyazawa ◽  
M. Nakamura ◽  
N. Sashida ◽  
...  
Keyword(s):  
Logic Device ◽  
Device Technology

0.18 μm low voltage/low power RF CMOS with zero Vth analog MOSFETs made by undoped epitaxial channel technique

2002 ◽  
Author(s):  
T. Ohguro ◽  
H. Naruse ◽  
H. Sugaya ◽  
E. Morifuji ◽  
S. Nakamura ◽  
...  
Keyword(s):  
Low Power ◽  
Low Voltage ◽  
Rf Cmos
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