High-Responsivity InGaAs/InP Quantum-Well Infrared Photodetectors Prepared by Metal Organic Chemical Vapor Deposition

Japanese Journal of Applied Physics ◽

10.1143/jjap.48.04c108 ◽

2009 ◽

Vol 48 (4) ◽

pp. 04C108

Author(s):

Yung-Sheng Wang ◽

Shoou-Jinn Chang ◽

Shu-Ting Chou ◽

Shih-Yen Lin ◽

Wei Lin

Keyword(s):

Chemical Vapor Deposition ◽

Quantum Well ◽

Vapor Deposition ◽

Chemical Vapor ◽

Organic Chemical ◽

Infrared Photodetectors ◽

High Responsivity ◽

Quantum Well Infrared Photodetectors ◽

Metal Organic ◽

Organic Chemical Vapor Deposition

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Long wavelength GaAs/Al x Ga1−x As quantum well infrared photodetectors grown using metal organic chemical vapor deposition

Journal of Electronic Materials ◽

10.1007/bf02665518 ◽

1992 ◽

Vol 21 (8) ◽

pp. 799-803 ◽

Author(s):

A. Zussman ◽

B. F. Levine ◽

W. S. Hobson

Keyword(s):

Chemical Vapor Deposition ◽

Quantum Well ◽

Vapor Deposition ◽

Chemical Vapor ◽

Organic Chemical ◽

Infrared Photodetectors ◽

Long Wavelength ◽

Quantum Well Infrared Photodetectors ◽

Metal Organic ◽

Organic Chemical Vapor Deposition

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Strained and Unstrained InGaAs/InP Quantum-Well Infrared Infrared Photodetectors Prepared by Metal Organic Chemical Vapor Deposition

10.7567/ssdm.2008.e-3-5 ◽

2008 ◽

Author(s):

Y. S. Wang ◽

S. T. Chou ◽

S. Y. Lin ◽

S. J. Chang ◽

W. Lin

Keyword(s):

Chemical Vapor Deposition ◽

Quantum Well ◽

Vapor Deposition ◽

Chemical Vapor ◽

Organic Chemical ◽

Infrared Photodetectors ◽

Metal Organic ◽

Organic Chemical Vapor Deposition

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In/sub 0.5/Ga/sub 0.5/As/GaAs quantum dot infrared photodetectors grown by metal-organic chemical vapor deposition

IEEE Electron Device Letters ◽

10.1109/led.2005.853635 ◽

2005 ◽

Vol 26 (9) ◽

pp. 628-630 ◽

Author(s):

L. Fu ◽

P. Lever ◽

K. Sears ◽

H.H. Tan ◽

C. Jagadish

Keyword(s):

Chemical Vapor Deposition ◽

Quantum Dot ◽

Vapor Deposition ◽

Chemical Vapor ◽

Organic Chemical ◽

Infrared Photodetectors ◽

Quantum Dot Infrared Photodetectors ◽

Metal Organic ◽

Gaas Quantum Dot ◽

Organic Chemical Vapor Deposition

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Influence of ion beam bombardment on characteristic of InGaN/GaN single quantum well grown by metal–organic chemical vapor deposition

Journal of Electroceramics ◽

10.1007/s10832-007-9354-5 ◽

2007 ◽

Vol 23 (2-4) ◽

pp. 180-184

Author(s):

Seung-Kyu Choi ◽

Jae-Min Jang ◽

Sung-Hak Yi ◽

Jung-A Kim ◽

Woo-Gwang Jung

Keyword(s):

Chemical Vapor Deposition ◽

Quantum Well ◽

Vapor Deposition ◽

Ion Beam ◽

Chemical Vapor ◽

Organic Chemical ◽

Single Quantum ◽

Single Quantum Well ◽

Metal Organic ◽

Organic Chemical Vapor Deposition

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1.2-μm GaAsP/InGaAs strain compensated single-quantum-well diode laser on GaAs using metal-organic chemical vapor deposition

IEEE Photonics Technology Letters ◽

10.1109/68.806850 ◽

1999 ◽

Vol 11 (12) ◽

pp. 1572-1574 ◽

Author(s):

Won-Jin Choi ◽

P.D. Dapkus ◽

J.J. Jewell

Keyword(s):

Chemical Vapor Deposition ◽

Quantum Well ◽

Diode Laser ◽

Vapor Deposition ◽

Chemical Vapor ◽

Organic Chemical ◽

Single Quantum ◽

Single Quantum Well ◽

Metal Organic ◽

Organic Chemical Vapor Deposition

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Optical properties improvement of InGaAs/GaInP single quantum well grown by metal-organic chemical vapor deposition

Optik ◽

10.1016/j.ijleo.2018.09.092 ◽

2019 ◽

Vol 176 ◽

pp. 295-301

Author(s):

Huibo Yuan ◽

Lin Li ◽

Jing Zhang ◽

Zaijin Li ◽

Lina Zeng ◽

...

Keyword(s):

Optical Properties ◽

Chemical Vapor Deposition ◽

Quantum Well ◽

Vapor Deposition ◽

Chemical Vapor ◽

Organic Chemical ◽

Single Quantum ◽

Single Quantum Well ◽

Metal Organic ◽

Organic Chemical Vapor Deposition

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A quantum well δ-doped GaAs FET fabricated by low-pressure metal organic chemical vapor deposition

Solid-State Electronics ◽

10.1016/0038-1101(91)90139-p ◽

1991 ◽

Vol 34 (6) ◽

pp. 649-653 ◽

Author(s):

W.C. Hsu ◽

W. Lin ◽

C. Wang

Keyword(s):

Chemical Vapor Deposition ◽

Quantum Well ◽

Vapor Deposition ◽

Chemical Vapor ◽

Low Pressure ◽

Organic Chemical ◽

Metal Organic ◽

Organic Chemical Vapor Deposition

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Band lineup of pseudomorphic GaAs1−xSbx quantum-well structures with GaAs, GaAsP, and InGaP barriers grown by metal organic chemical vapor deposition

Journal of Applied Physics ◽

10.1063/1.2363237 ◽

2006 ◽

Vol 100 (9) ◽

pp. 093703 ◽

Author(s):

M. S. Noh ◽

J. H. Ryou ◽

R. D. Dupuis ◽

Y.-L. Chang ◽

R. H. Weissman

Keyword(s):

Chemical Vapor Deposition ◽

Quantum Well ◽

Vapor Deposition ◽

Chemical Vapor ◽

Organic Chemical ◽

Quantum Well Structures ◽

Metal Organic ◽

Organic Chemical Vapor Deposition

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Cathodoluminescence Studies of InGaN/GaN Multiple Quantum Well Structure Grown by Metal Organic Chemical Vapor Deposition

ECS Transactions ◽

10.1149/05302.0031ecst ◽

2013 ◽

Vol 53 (2) ◽

pp. 31-38 ◽

Author(s):

Y. Li ◽

F. Lu ◽

F. Ramos ◽

E. B. Stokes

Keyword(s):

Chemical Vapor Deposition ◽

Quantum Well ◽

Vapor Deposition ◽

Multiple Quantum Well ◽

Chemical Vapor ◽

Organic Chemical ◽

Multiple Quantum ◽

Quantum Well Structure ◽

Metal Organic ◽

Organic Chemical Vapor Deposition

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Compressively strained multiple quantum well InAsSb lasers emitting at 3.6 μm grown by metal-organic chemical vapor deposition

Applied Physics Letters ◽

10.1063/1.118176 ◽

1997 ◽

Vol 70 (4) ◽

pp. 443-445 ◽

Author(s):

B. Lane ◽

D. Wu ◽

A. Rybaltowski ◽

H. Yi ◽

J. Diaz ◽

...

Keyword(s):

Chemical Vapor Deposition ◽

Quantum Well ◽

Vapor Deposition ◽

Multiple Quantum Well ◽

Chemical Vapor ◽

Organic Chemical ◽

Multiple Quantum ◽

Metal Organic ◽

Organic Chemical Vapor Deposition

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