Investigation of Interface Formed between Top Electrodes and Epitaxial NiO Films for Bipolar Resistance Switching

2010 ◽  
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pp. 031102 ◽  
Author(s):  
Seung Ran Lee ◽  
Hoon Min Kim ◽  
Jung Hoon Bak ◽  
Yun Daniel Park ◽  
Kookrin Char ◽  
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Keyword(s):  
Resistance Switching ◽  
Bipolar Resistance Switching ◽  
Nio Films

Role of oxygen vacancies formed between top electrodes and epitaxial NiO films in bipolar resistance switching

2012 ◽  
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pp. 369-372 ◽  
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S.R. Lee ◽  
H.M. Kim ◽  
K. Char ◽  
J.H. Jang ◽  
M. Kim ◽  
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Keyword(s):  
Oxygen Vacancies ◽  
Resistance Switching ◽  
Bipolar Resistance Switching ◽  
Nio Films

Effect of Cation Substitution on Bipolar Resistance Switching Behavior in Epitaxially Grown NiO Films

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Author(s):  
Hoonmin Kim ◽  
Seungran Lee ◽  
Junghoon Bak ◽  
Myungrae Jo ◽  
Yun D. Park ◽  
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Keyword(s):  
Resistance Switching ◽  
Switching Behavior ◽  
Cation Substitution ◽  
Bipolar Resistance Switching ◽  
Nio Films

Oxygen migration process in the interfaces during bipolar resistance switching behavior of WO3−x-based nanoionics devices

2012 ◽  
Vol 100 (23) ◽  
pp. 231603 ◽  
Author(s):  
Rui Yang ◽  
Kazuya Terabe ◽  
Tohru Tsuruoka ◽  
Tsuyoshi Hasegawa ◽  
Masakazu Aono
Keyword(s):  
Resistance Switching ◽  
Switching Behavior ◽  
Migration Process ◽  
Oxygen Migration ◽  
Bipolar Resistance Switching

Bipolar Resistance Switching Characteristics in Zirconium Oxide

2013 ◽  
Vol 457 (1) ◽  
pp. 146-152 ◽  
Author(s):  
Chun-Hung Lai ◽  
Chih-Yi Liu ◽  
Hsiwen Yang
Keyword(s):  
Zirconium Oxide ◽  
Resistance Switching ◽  
Switching Characteristics ◽  
Bipolar Resistance Switching

scholarly journals Anomalous effect due to oxygen vacancy accumulation below the electrode in bipolar resistance switching Pt/Nb:SrTiO3 cells

APL Materials ◽  
2014 ◽  
Vol 2 (6) ◽  
pp. 066103 ◽  
Author(s):  
Shinbuhm Lee ◽  
Jae Sung Lee ◽  
Jong-Bong Park ◽  
Yong Koo Kyoung ◽  
Myoung-Jae Lee ◽  
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Keyword(s):  
Oxygen Vacancy ◽  
Resistance Switching ◽  
Anomalous Effect ◽  
Bipolar Resistance Switching

Bipolar resistance switching in the fully transparent BaSnO 3 -based memory device

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Vol 23 (8) ◽  
pp. 087304
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Ting Zhang ◽  
Jiang Yin ◽  
Gao-Feng Zhao ◽  
Wei-Feng Zhang ◽  
Yi-Dong Xia ◽  
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Keyword(s):  
Memory Device ◽  
Resistance Switching ◽  
Bipolar Resistance Switching
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